MRF151 M/A-COM Technology, MRF151 Datasheet

RF MOSFET Power 5-175MHz 150Watts 50Volt Gain 18dB

MRF151

Manufacturer Part Number
MRF151
Description
RF MOSFET Power 5-175MHz 150Watts 50Volt Gain 18dB
Manufacturer
M/A-COM Technology
Datasheet
1.MRF151.pdf (8 pages)

Specifications of MRF151

Configuration
Single
Drain-source Breakdown Voltage
125 V
Gate-source Breakdown Voltage
40 V
Continuous Drain Current
16 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Package / Case
Case 211-11
Minimum Operating Temperature
- 65 C
Transistor Polarity
N-Channel
Lead Free Status / Rohs Status
 Details

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1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
RF Power Field-Effect Transistor
150 W, 50 V, 175 MHz N-Channel Broadband MOSFET
Features
Guaranteed Performance at 30 MHz, 50 V:
•
•
•
Typical Performance at 175 MHz, 50 V:
•
•
•
•
•
Description and Applications
Designed for broadband commercial and military
applications at frequencies to 175 MHz. The high
power, high gain and broadband performance of this
device makes possible solid state transmitters for
FM broadcast or TV channel frequency bands.
MRF151
Part Status: Released
Output Power — 150 W
Gain — 18 dB (22 dB Typ)
Efficiency — 40%
Output Power — 150 W
Gain — 13 dB
Low Thermal Resistance
Ruggedness Tested at Rated Output Power
Nitride Passivated Die for Enhanced Reliability
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
Package Outline
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Products
RoHS Compliant

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MRF151 Summary of contents

Page 1

... MRF151 Part Status: Released RF Power Field-Effect Transistor 150 175 MHz N-Channel Broadband MOSFET Features Guaranteed Performance at 30 MHz • Output Power — 150 W • Gain — (22 dB Typ) • Efficiency — 40% Typical Performance at 175 MHz • Output Power — 150 W • ...

Page 2

... MRF151 Part Status: Released RF Power Field-Effect Transistor 150 175 MHz N-Channel Broadband MOSFET 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 3

... MRF151 Part Status: Released RF Power Field-Effect Transistor 150 175 MHz N-Channel Broadband MOSFET 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 4

... MRF151 Part Status: Released RF Power Field-Effect Transistor 150 175 MHz N-Channel Broadband MOSFET 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 5

... MRF151 Part Status: Released RF Power Field-Effect Transistor 150 175 MHz N-Channel Broadband MOSFET 5 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 6

... MRF151 Part Status: Released RF Power Field-Effect Transistor 150 175 MHz N-Channel Broadband MOSFET 6 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 7

... MRF151 Part Status: Released RF Power Field-Effect Transistor 150 175 MHz N-Channel Broadband MOSFET 7 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 8

... MRF151 Part Status: Released RF Power Field-Effect Transistor 150 175 MHz N-Channel Broadband MOSFET 8 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

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