BFY450 (P) Infineon Technologies, BFY450 (P) Datasheet

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BFY450 (P)

Manufacturer Part Number
BFY450 (P)
Description
RF Bipolar Small Signal HiRel NPN Silicon RF Transistor
Manufacturer
Infineon Technologies
Datasheet

Specifications of BFY450 (P)

Configuration
Single Dual Emitter
Transistor Polarity
NPN
Maximum Operating Frequency
22000 MHz
Collector- Emitter Voltage Vceo Max
4.5 V
Emitter- Base Voltage Vebo
1.5 V
Continuous Collector Current
100 mA
Power Dissipation
450 mW
Maximum Operating Temperature
+ 175 C
Package / Case
Micro-X
Dc Collector/base Gain Hfe Min
50 at 20 mA at 1 V
Gain Bandwidth Product Ft
22 GHz
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package
Micro-X
Comment
also available in (S) and (H) quality
Vceo (max)
4.5 V
Ic(max)
100.0 mA
Ptot (max)
450.0 mW
Lead Free Status / Rohs Status
No
Other names
BFY450PNZ
HiRel NPN Silicon RF Transistor
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
(ql) Quality Level:
(see order instructions for ordering example)
IFAG IMM RPD D HIR
Type
BFY450 (ql)
HiRel Discrete and Microwave Semiconductor
For Medium Power Amplifiers
Compression Point P
Max. Available Gain G
Hermetically sealed microwave package
Transition Frequency f T = 20 GHz
SIEGET
Infineon Technologies Grounded Emitter Transistor-
25 GHz f T -Line
ESA/SCC Detail Spec. No.: 5611/008
Type Variant No. 03
25-Line
Space Qualified
P: Professional Quality
H: High Rel Quality
S: Space Quality
ES: ESA Space Quality
-1dB
ma
Marking
=19dBm 1.8 GHz
= 16dB at 1.8 GHz
-
Ordering Code
see below
1 of 4
Pin Configuration
C
1
2
4
1
E
3
B
4
E
V2, February 2011
BFY450
Package
Micro-X
3
2

Related parts for BFY450 (P)

BFY450 (P) Summary of contents

Page 1

... Hermetically sealed microwave package  Transition Frequency GHz   SIEGET 25-Line Infineon Technologies Grounded Emitter Transistor- 25 GHz f T -Line  Space Qualified ESA/SCC Detail Spec. No.: 5611/008 Type Variant No. 03 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking ...

Page 2

Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation,  110°C 1 Junction temperature Operating temperature range Storage temperature range Thermal Resistance 2) Junction-soldering point Notes ...

Page 3

Electrical Characteristics (continued) Parameter AC Characteristics Transition frequency I = 90mA 1.0 GHz 90mA 2.0 GHz C CE Collector-base capacitance ...

Page 4

... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. ...

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