APTGF300U120DG

Manufacturer Part NumberAPTGF300U120DG
ManufacturerMICROSEMI
APTGF300U120DG datasheets

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Specifications of APTGF300U120DG

Lead Free Status / Rohs StatusCompliant  
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Next
Single Switch
with Series diodes
NPT IGBT Power Module
EK
E
G
E
CK
EK
G
Absolute maximum ratings
Symbol
Parameter
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
APTGF300U120DG
V
CES
I
C
Application
•
Zero Current Switching resonant mode
C
Features
•
Non Punch Through (NPT) FAST IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 50 kHz
-
Soft recovery parallel diodes
CK
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
•
Kelvin emitter for easy drive
•
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
•
High level of integration
Benefits
C
•
Outstanding performance at high frequency
operation
•
Stable temperature behavior
•
Very rugged
•
Direct mounting to heatsink (isolated package)
•
Low junction to case thermal resistance
•
Easy paralleling due to positive T
•
Low profile
•
RoHS compliant
Max ratings
1200
T
= 25°C
400
c
T
= 80°C
300
c
T
= 25°C
600
c
±20
T
= 25°C
1780
c
T
= 150°C
600A @ 1200V
j
www.microsemi.com
= 1200V
= 300A @ Tc = 80°C
of V
C
CEsat
Unit
V
A
V
W
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APTGF300U120DG Summary of contents

  • Page 1

    ... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF300U120DG V CES I C Application • Zero Current Switching resonant mode C Features • ...

  • Page 2

    ... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr Er Reverse Recovery Energy APTGF300U120DG = 25°C unless otherwise specified j Test Conditions T = 25° 1200V T = 125° 25°C V ...

  • Page 3

    ... T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGF300U120DG IGBT Diode To heatsink M6 For terminals M5 www.microsemi.com Min Typ Max Unit 0.07 °C/W ...

  • Page 4

    ... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.08 0.07 0.9 0.06 0.7 0.05 0.5 0.04 0.03 0.3 0.02 0.1 0.01 0.05 0 0.00001 0.0001 APTGF300U120DG =15V) GE 600 T J 500 400 300 200 T =125°C J 100 Energy losses vs Collector Current ...

  • Page 5

    ... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF300U120DG Forward Characteristic of diode 600 ...

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