KSH117-I

Manufacturer Part NumberKSH117-I
ManufacturerFairchild Semiconductor
KSH117-I datasheet
 

Specifications of KSH117-I

PolarityPNPNumber Of Elements1
Collector-emitter Voltage100VCollector-base Voltage100V
Emitter-base Voltage5VBase-emitter Saturation Voltage (max)4V
Collector-emitter Saturation Voltage2VCollector Current (dc) (max)2A
Dc Current Gain200Operating Temp Range-65C to 150C
Operating Temperature ClassificationMilitaryMountingThrough Hole
Pin Count3 +TabPackage TypeIPAK
Lead Free Status / Rohs StatusNot Compliant  
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D-PAK for Surface Mount Applications
• High DC Current Gain
• Built-in a Damper Diode at E-C
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “ - I “ Suffix)
• Electrically Similar to Popular TIP117
PNP Silicon Darlington Transistor
Absolute Maximum Ratings
Symbol
Parameter
V
Collector-Base Voltage
CBO
V
Collector-Emitter Voltage
CEO
V
Emitter-Base Voltage
EBO
I
Collector Current (DC)
C
I
Collector Current (Pulse)
CP
I
Base Current
B
P
Collector Dissipation (T
C
Collector Dissipation (T
T
Junction Temperature
J
T
Storage Temperature
STG
Electrical Characteristics
Symbol
V
(sus)
*Collector-Emitter Sustaining Voltage
CEO
I
Collector Cut-off Current
CEO
I
Collector Cut-off Current
CBO
I
Emitter Cut-off Current
EBO
h
*DC Current Gain
FE
V
(sat)
*Collector-Emitter Saturation Voltage
CE
V
(sat)
*Base-Emitter Saturation Voltage
BE
V
(on)
*Base-Emitter On Voltage
BE
f
Current Gain Bandwidth Product
T
C
Output Capacitance
ob
* Pulse Test: PW 300 s, Duty Cycle 2%
©2002 Fairchild Semiconductor Corporation
KSH117
1
T
=25 C unless otherwise noted
C
Value
- 100
- 100
- 5
- 2
- 4
- 50
=25 C)
20
C
=25 C)
1.75
a
150
- 65 ~ 150
T
=25 C unless otherwise noted
C
Parameter
Test Condition
I
= - 30mA, I
C
V
= - 50V, I
CE
V
= - 100V, I
CB
V
= - 5V, I
EB
V
= - 3V, V
CE
V
= - 3V, V
CE
V
= - 3V, I
CE
I
= -2A, I
C
I
= - 4A, I
C
I
= - 4A, I
C
V
= - 3A, I
CE
V
= -10V, I
CE
V
= - 10V, I
CB
f= 0.1MHz
D-PAK
I-PAK
1
1.Base
2.Collector
3.Emitter
Equivalent Circuit
C
Units
V
V
B
V
A
A
mA
R1
R2
W
R 1 10 k
E
W
R 2 0.6 k
C
C
Min.
Max.
= 0
- 100
B
= 0
- 20
B
= 0
- 20
E
= 0
- 2
C
= - 0.5A
500
EB
= - 2A
1000
12K
EB
= - 4A
200
C
= - 8mA
- 2
B
= - 40mA
- 3
B
= - 40mA
- 4
B
= - 2A
- 2.8
C
= - 0.75A
25
C
= 0
200
E
Rev. A4, October 2002
Units
V
A
A
mA
V
V
V
V
MHz
pF

KSH117-I Summary of contents

  • Page 1

    ... Saturation Voltage CE V (sat) *Base-Emitter Saturation Voltage BE V (on) *Base-Emitter On Voltage BE f Current Gain Bandwidth Product T C Output Capacitance ob * Pulse Test: PW 300 s, Duty Cycle 2% ©2002 Fairchild Semiconductor Corporation KSH117 1 T =25 C unless otherwise noted C Value - 100 - 100 - = =25 C) 1.75 a 150 ...

  • Page 2

    ... I [A], COLLECTOR CURRENT C Figure 3. Collector Output Capacitance 1000 100 10 1 -0.01 -0 [V], COLLECTOR-BASE VOLTAGE CB Figure 5. Turn Off Time ©2002 Fairchild Semiconductor Corporation -10 -1 -0.1 -0.01 -1 -10 -0.01 Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 30V CC I =250I ...

  • Page 3

    ... Typical Characteristics 100 C], CASE TEMPERATURE C Figure 7. Power Derating ©2002 Fairchild Semiconductor Corporation (Continued) 125 150 175 Rev. A4, October 2002 ...

  • Page 4

    ... Package Dimensions (0.50) MAX0.96 2.30TYP [2.30 0.20] ©2002 Fairchild Semiconductor Corporation D-PAK 6.60 0.20 5.34 0.30 (4.34) (0.50) 0.76 0.10 2.30TYP [2.30 0.20] 6.60 (2XR0.25) 2.30 0.10 0.50 0.10 0.50 0.10 1.02 0.20 2.30 0.20 0.20 (5.34) (5.04) (1.50) 0.76 0.10 Dimensions in Millimeters Rev ...

  • Page 5

    ... Package Dimensions (0.50) MAX0.96 0.76 0.10 2.30TYP [2.30 0.20] ©2002 Fairchild Semiconductor Corporation (Continued) I-PAK 6.60 0.20 5.34 0.20 (4.34) (0.50) 2.30TYP [2.30 0.20] 2.30 0.20 0.50 0.10 0.50 0.10 Dimensions in Millimeters Rev. A4, October 2002 ...

  • Page 6

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...