IRF7103QPBF International Rectifier, IRF7103QPBF Datasheet

DUAL N CH MOSFET, 50V, 3A, SOIC

IRF7103QPBF

Manufacturer Part Number
IRF7103QPBF
Description
DUAL N CH MOSFET, 50V, 3A, SOIC
Manufacturer
International Rectifier
Datasheet
1.IRF7103Q.pdf (10 pages)

Specifications of IRF7103QPBF

Transistor Polarity
N Channel
Continuous Drain Current Id
3A
Drain Source Voltage Vds
50V
On Resistance Rds(on)
130mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRF7103QPBF
Manufacturer:
IR
Quantity:
20 000
Benefits
Description
Specifically designed for Automotive applications, these
HEXFET
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other
applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it ideal
in a variety of power applications. This dual, surface mount
SO-8 can dramatically reduce board space and is also available
in Tape & Reel.
Absolute Maximum Ratings
Thermal Resistance
Typical Applications
I
I
I
P
V
E
I
E
dv/dt
T
Symbol
R
R
www.irf.com
D
D
DM
AR
J,
D
GS
AS
AR
@ T
@ T
JL
JA
@T
T
Anti-lock Braking Systems (ABS)
Electronic Fuel Injection
Power Doors, Windows & Seats
Advanced Process Technology
Dual N-Channel MOSFET
Ultra Low On-Resistance
175°C Operating Temperature
Repetitive Avalanche Allowed up to Tjmax
Automotive [Q101] Qualified
STG
C
C
C
®
= 25°C
= 70°C
= 25°C
Power MOSFET's in a Dual SO-8 package utilize
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy„
Avalanche Current
Repetitive Avalanche Energy†
Peak Diode Recovery dv/dt …
Junction and Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient
Parameter
Parameter
ƒ
AUTOMOTIVE MOSFET
ƒ
GS
GS
@ 4.5V
@ 4.5V
G2
G1
S2
S1
V
50V
DSS
1
2
3
4
Top View
See Fig.16c, 16d, 19, 20
Typ.
–––
–––
R
HEXFET
8
7
6
5
DS(on)
200@V
130@V
-55 to + 175
D1
D1
D2
D2
Max.
± 20
3.0
2.5
2.4
25
16
22
12
max (mW)
GS
GS
®
= 4.5V
Power MOSFET
= 10V
IRF7103Q
Max.
62.5
20
SO-8
3.0A
1.5A
mW/°C
I
Units
Units
D
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1

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IRF7103QPBF Summary of contents

Page 1

Typical Applications Anti-lock Braking Systems (ABS) Electronic Fuel Injection Power Doors, Windows & Seats Benefits Advanced Process Technology Dual N-Channel MOSFET Ultra Low On-Resistance 175°C Operating Temperature Repetitive Avalanche Allowed up to Tjmax Automotive [Q101] Qualified Description Specifically designed for ...

Page 2

IRF7103Q Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 10 20µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100. 175°C T ...

Page 4

IRF7103Q 10000 0V MHZ C iss = rss = oss = 1000 Ciss Coss 100 Crss 10 ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 0.1 SINGLE PULSE ...

Page 6

IRF7103Q 0.15 0.14 0.13 0. 3.0A 0.11 0.10 0.09 4.5 6.0 7.5 9.0 10.5 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage 2.0 1.8 1.5 1.3 1.0 -75 -50 -25 0 ...

Page 7

Starting T , Junction Temperature ( C) J Fig 16a. Maximum Avalanche Energy Vs. Drain Current Current Regulator Same Type as D.U.T. 50K .2 F 12V .3 F D.U.T. V ...

Page 8

IRF7103Q 1000 Duty Cycle = Single Pulse 100 10 0.01 1 0.05 0.10 0.1 0.01 1.0E-08 1.0E-07 1.0E-06 Fig 19. Typical Avalanche Current Vs.Pulsewidth 25 TOP Single Pulse BOTTOM 10% Duty Cy cle 3. ...

Page 9

SO-8 Package Details & " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PI PSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9Ã $Ãb%d %ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9Ã!$Ãb d &ÃÃÃ9DH@ITDPIÃDTÃUC@ÃG@IBUCÃP ...

Page 10

IRF7103Q SO-8 Tape and Reel TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING ...

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