NE85633-T1B-A CALIFORNIA EASTERN LABS, NE85633-T1B-A Datasheet

NE85633-T1B-A
Manufacturer Part Number	NE85633-T1B-A
Manufacturer	CALIFORNIA EASTERN LABS
NE85633-T1B-A datasheets	1. NE85633-T1B-A.pdf (26 pages)

Request lead time and price

Availability: By request

International delivery:

Warranty: 60 days

Shipping & payment terms

Specifications of NE85633-T1B-A
Transistor Polarity	NPN	Number Of Elements	1
Collector-emitter Voltage	12V	Collector-base Voltage	20V
Emitter-base Voltage	3V	Collector Current (dc) (max)	100mA
Dc Current Gain (min)	50	Power Dissipation	200mW
Frequency (max)	7GHz	Operating Temp Range	-65C to 150C
Operating Temperature Classification	Military	Mounting	Surface Mount
Pin Count	3	Package Type	SOT-23
Lead Free Status / Rohs Status	Compliant

Page 1/26

Download datasheet (828Kb)Embed

Prev Next

FEATURES

• HIGH GAIN BANDWIDTH PRODUCT:

= 7 GHz

• LOW NOISE FIGURE:

1.1 dB at 1 GHz

• HIGH COLLECTOR CURRENT: 100 mA

• HIGH RELIABILITY METALLIZATION

• LOW COST

DESCRIPTION

NEC's NE856 series of NPN epitaxial silicon transistors is

designed for low cost amplifier and oscillator applications. Low

noise figures, high gain, and high current capability equate to

wide dynamic range and excellent linearity. The NE856 series

offers excellent performance and reliability at low cost. This is

achieved by NEC's titanium/platinum/gold metallization sys-

tem and their direct nitride passivated base surface process.

The NE856 series is available in chip form and a Micro-x

package for high frequency applications. It is also available in

several low cost plastic package styles.

NE85600

NOISE FIGURE AND GAIN

vs. FREQUENCY

= 10 V, I

7 mA

4.0

MSG

3.5

3.0

2.5

2.0

1.5

1.0

0.4 0.5

1.0

Frequency, f (GHz)

The information in this document is subject to change without notice. Before using this document, please confirm

that this is the latest version.

Date Published: June 28, 2005

NE856 SERIES

NEC's NPN SILICON HIGH

FREQUENCY TRANSISTOR

00 (CHIP)

32 (TO-92)

18 (SOT 343 STYLE)

MAG

30 (SOT 323 STYLE)

MIN

39 (SOT 143 STYLE)

NPN SILICON RF TRANSISTOR

35 (MICRO-X)

34 (SOT 89 STYLE)

19 (3 PIN ULTRA SUPER

MINI MOLD)

33 (SOT 23 STYLE)

39R (SOT 143R STYLE)

Download datasheet (828Kb)

Related parts for NE85633-T1B-A
Part Number	Description	Manufacturer	Datasheet
NE85633-T1B-R25-A		CALIFORNIA EASTERN LABS	NE85633-T1B-R25-A.pdf (26 pages)
NE85633	RF Bipolar Small Signal USE 551-NE85633-A	NEC	NE85619-T1-A.pdf (26 pages)
NE85619-T1-A	TRANSISTOR NPN 1GHZ SMD	CEL	NE85619-T1-A.pdf (26 pages)
NE85630-T1-A	TRANSISTOR NPN 1GHZ SOT-323	CEL	NE85619-T1-A.pdf (26 pages)
NE85634-T1-A	TRANSISTOR NPN 1GHZ SOT-89	CEL	NE85619-T1-A.pdf (26 pages)
NE856M03-T1-A	TRANSISTOR NPN 1GHZ SC-90	CEL	NE856M03-T1-A.pdf (4 pages)
NE85618-T1-A	TRANSISTOR NPN 1GHZ SOT-343	CEL	NE85619-T1-A.pdf (26 pages)
NE85639-T1-A	TRANSISTOR NPN 1GHZ SOT-143	CEL	NE85619-T1-A.pdf (26 pages)
NE85630-T1-R24-A	TRANSISTOR NPN 1GHZ SOT-323	CEL	NE85619-T1-A.pdf (26 pages)
NE85630-T1-R25-A	TRANSISTOR NPN 1GHZ SOT-323	CEL	NE85619-T1-A.pdf (26 pages)
NE85619-T1-A		California Eastern Labs	NE85619-T1-A.pdf (26 pages)
NE85639-T1-A		California Eastern Labs	NE85639-T1-A.pdf (26 pages)
NE856M02-T1-AZ		California Eastern Labs	NE856M02-T1-AZ.pdf (8 pages)
NE85633-T1B-R25-A		CALIFORNIA EASTERN LABS	NE85633-T1B-R25-A.pdf (26 pages)
NE85634-T1-A		CALIFORNIA EASTERN LABS	NE85634-T1-A.pdf (26 pages)

NE85633-T1B-A Summary of contents
Page 1 FEATURES • HIGH GAIN BANDWIDTH PRODUCT GHz T • LOW NOISE FIGURE: 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST DESCRIPTION NEC's NE856 series of NPN epitaxial ... Page 2 ... A NE85633 2SC3356 33 UNITS MIN TYP MAX MIN GHz 7.0 dB 1 120 300 50 1.0 μA 1.0 μA pF 0.55 1.0 mW 200 625 °C/W ... Page 3 ... J T Storage Temperature STG Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Maximum T for the NE85600 and NE85635 is 200°C. J TYPICAL PERFORMANCE CURVES NE85633 AND NE85635 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 400 300 NE85635 200 NE85633 100 100 ... Page 4 ... COLLECTOR CURRENT GHz 14 NE85633 12 NE85632 10 NE85634 Collector Current, I (mA ° 1.0 2.0 NE85633 NE85635 NE85632 NE85634 50 70 100 50 70 100 NE856 SERIES NE85635 FORWARD INSERTION GAIN AND MAXIMUM AVAILABLE GAIN vs. FREQUENCY MAG 21E 0 -5 0.1 0.2 0.3 0 Frequency, f (GHz) NE85632 AND NE85634 INTERMODULATION DISTORTION vs ... Page 5 ... TYPICAL PERFORMANCE CURVES NE85633 FORWARD INSERTION GAIN AND MAXIMUM AVAILABLE GAIN vs. FREQUENCY MAG 15 2 \|S21E 0.1 0.2 0.3 0.5 0.7 Frequency, f (GHz) NE85600 TYPICAL NOISE PARAMETERS (T FREQ Γ OPT A OPT (MHz) (dB) (dB) MAG 500 1.2 21.86 0.20 1000 1.4 15.82 0.22 2000 2 ... Page 6 ... NE85632 TYPICAL NOISE PARAMETERS FREQ Γ OPT A OPT (MHz) (dB) (dB) MAG 500 1.1 0.20 1000 1.6 30.72 0.34 NE85633 TYPICAL NOISE PARAMETERS FREQ Γ OPT A OPT (MHz) (dB) (dB) MAG 500 1.62 9.23 0.71 800 2.45 6.11 0.72 1000 2.80 5 ... Page 7 TYPICAL COMMON EMITTER SCATTERING PARAMETERS j50 j25 j10 -j10 -j25 NE85600 -j50 FREQUENCY S 11 (MHz) MAG ANG 100 0.881 -40.9 200 0.833 -75.0 500 0.803 -129.8 ... Page 8 TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0 0.2 0.2 0.4 0.6 0 -0.2 -0.4 -0.6 NE85618 -0 FREQUENCY S 11 (MHz) MAG ... Page 9 TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0.4 0.2 0.2 0.4 0.6 0 -0.2 -0.4 NE85619 -0 FREQUENCY S 11 (MHz) MAG ANG 50 ... Page 10 TYPICAL COMMON EMITTER SCATTERING PARAMETERS 0.8 0.6 0.4 S 0.2 0.2 0.4 0.6 0 -0.2 -0.4 -0.6 NE85630 -0 2 FREQUENCY S 11 (MHz) MAG ANG 50 0.931 ... Page 11 TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0.4 0.2 0.2 0.4 0.6 0.8 1 -0.2 -0.4 -0.6 -0.8 -1 NE85632 FREQUENCY S 11 (MHz) MAG ANG 100 0.71 -50 ... Page 12 ... TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0 0.2 0.2 0.4 0.6 0 -0.2 -0.4 -0.6 -0.8 -1 NE85633 FREQUENCY S 11 (MHz) MAG ANG 50 0.960 -12.7 100 0.942 -25.3 200 0.898 -49.1 400 0.800 -87.6 600 0.717 -115.1 800 0.672 -135.4 1000 0.649 -150 ... Page 13 TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0.4 0.2 0.2 0.4 0.6 0.8 1 -0.2 -0.4 -0.6 -0.8 -1 NE85634 FREQUENCY S 11 (MHz) MAG ANG 100 0.714 -42.6 ... Page 14 TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0 0.2 0.2 0.4 0.6 0.8 1 -0.2 -0.4 -0.6 -0.8 -1 NE85635 FREQUENCY S 11 (MHz) MAG ANG 100 ... Page 15 TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0 0.2 0.2 0.4 0.6 0 -0.2 -0.4 -0.6 -0.8 -1 NE85639 FREQUENCY S 11 (MHz) MAG ... Page 16 NE85618 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 6e-16 MJC BF 120 XCJC NF 0.98 CJS VAF 10 VJS IKF 0.08 MJS ISE 3.2e- 1. XTF NR 0.991 VTF VAR ... Page 17 NE85619 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 6e-16 MJC BF 120 XCJC NF 0.98 CJS VAF 10 VJS IKF 0.08 MJS ISE 3.2e- 1. XTF NR 0.991 VTF VAR ... Page 18 NE85630 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 6e-16 MJC BF 120 XCJC NF 0.98 CJS VAF 10 VJS IKF 0.08 MJS ISE 32e- 1. XTF NR 0.991 VTF VAR ... Page 19 ... NE85633 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 6e-16 MJC BF 120 XCJC NF 0.98 CJS VAF 10 VJS IKF 0.08 MJS ISE 32e- 1. XTF NR 0.991 VTF VAR 3.9 ITF IKR 0.17 PTF ISC 0.38 XTB RB 4.16 XTI RBM 3.6 KF IRB 1 ... Page 20 NE85635 NONLINEAR MODEL SCHEMATIC BASE BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 6e-16 MJC BF 120 XCJC NF 0.98 CJS VAF 10 VJS IKF 0.08 MJS ISE 32e- 1. XTF NR 0.991 VTF VAR ... Page 21 NE85639 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 6e-16 MJC BF 120 XCJC NF 0.98 CJS VAF 10 VJS IKF 0.08 MJS ISE 3.2e- 1. XTF NR 0.991 VTF VAR ... Page 22 OUTLINE DIMENSIONS (Units in mm) NE85600 (CHIP) 0.35 0.30 0.22 BASE EMITTER 0.07φ (Chip Thickness: 140 to 160 μm) PACKAGE OUTLINE 18 (SOT-343) 2.1 ± 0.2 1.25 ± 0 0.65 2.0 ± 0.2 0. +0.10 0.4 ... Page 23 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 30 (SOT-323) 2.1 ± 0.2 1.25 ± 0.1 2 0.65 2.0 ± 0.2 1 MARKING 1. Emitter 0.15 2. Base 3. Collector 0.9 ± 0 0.1 PACKAGE OUTLINE 32 ... Page 24 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 35 (MICRO-X) E 3.8 MIN ALL LEADS 0.5±0. 45˚ E 2.55±0.2 φ2.1 +0.06 0.1 -0.04 PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 -0 2.9 ± 0.2 0.95 0.85 ... Page 25 ... ORDERING INFORMATION (Pb-Free) PART NUMBER QUANTITY NE85600 100 NE85618-T1-A 3000 NE85619-T1-A 3000 NE85630-T1-A 3000 NE85632-A 1 NE85633-T1B-A 3000 NE85634-T1-A 1000 NE85635 1 NE85639-T1-A 3000 NE85639R-T1 3000 Note: 1. Embossed tape 12 mm wide. Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury ... Page 26 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...

NE85633-T1B-A Summary of contents

Page 1
FEATURES • HIGH GAIN BANDWIDTH PRODUCT GHz T • LOW NOISE FIGURE: 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST DESCRIPTION NEC's NE856 series of NPN epitaxial ...
Page 2
... A NE85633 2SC3356 33 UNITS MIN TYP MAX MIN GHz 7.0 dB 1 120 300 50 1.0 μA 1.0 μA pF 0.55 1.0 mW 200 625 °C/W ...
Page 3
... J T Storage Temperature STG Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Maximum T for the NE85600 and NE85635 is 200°C. J TYPICAL PERFORMANCE CURVES NE85633 AND NE85635 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 400 300 NE85635 200 NE85633 100 100 ...
Page 4
... COLLECTOR CURRENT GHz 14 NE85633 12 NE85632 10 NE85634 Collector Current, I (mA ° 1.0 2.0 NE85633 NE85635 NE85632 NE85634 50 70 100 50 70 100 NE856 SERIES NE85635 FORWARD INSERTION GAIN AND MAXIMUM AVAILABLE GAIN vs. FREQUENCY MAG 21E 0 -5 0.1 0.2 0.3 0 Frequency, f (GHz) NE85632 AND NE85634 INTERMODULATION DISTORTION vs ...
Page 5
... TYPICAL PERFORMANCE CURVES NE85633 FORWARD INSERTION GAIN AND MAXIMUM AVAILABLE GAIN vs. FREQUENCY MAG 15 2 |S21E 0.1 0.2 0.3 0.5 0.7 Frequency, f (GHz) NE85600 TYPICAL NOISE PARAMETERS (T FREQ Γ OPT A OPT (MHz) (dB) (dB) MAG 500 1.2 21.86 0.20 1000 1.4 15.82 0.22 2000 2 ...
Page 6
... NE85632 TYPICAL NOISE PARAMETERS FREQ Γ OPT A OPT (MHz) (dB) (dB) MAG 500 1.1 0.20 1000 1.6 30.72 0.34 NE85633 TYPICAL NOISE PARAMETERS FREQ Γ OPT A OPT (MHz) (dB) (dB) MAG 500 1.62 9.23 0.71 800 2.45 6.11 0.72 1000 2.80 5 ...
Page 7
TYPICAL COMMON EMITTER SCATTERING PARAMETERS j50 j25 j10 -j10 -j25 NE85600 -j50 FREQUENCY S 11 (MHz) MAG ANG 100 0.881 -40.9 200 0.833 -75.0 500 0.803 -129.8 ...
Page 8
TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0 0.2 0.2 0.4 0.6 0 -0.2 -0.4 -0.6 NE85618 -0 FREQUENCY S 11 (MHz) MAG ...
Page 9
TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0.4 0.2 0.2 0.4 0.6 0 -0.2 -0.4 NE85619 -0 FREQUENCY S 11 (MHz) MAG ANG 50 ...
Page 10
TYPICAL COMMON EMITTER SCATTERING PARAMETERS 0.8 0.6 0.4 S 0.2 0.2 0.4 0.6 0 -0.2 -0.4 -0.6 NE85630 -0 2 FREQUENCY S 11 (MHz) MAG ANG 50 0.931 ...
Page 11
TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0.4 0.2 0.2 0.4 0.6 0.8 1 -0.2 -0.4 -0.6 -0.8 -1 NE85632 FREQUENCY S 11 (MHz) MAG ANG 100 0.71 -50 ...
Page 12
... TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0 0.2 0.2 0.4 0.6 0 -0.2 -0.4 -0.6 -0.8 -1 NE85633 FREQUENCY S 11 (MHz) MAG ANG 50 0.960 -12.7 100 0.942 -25.3 200 0.898 -49.1 400 0.800 -87.6 600 0.717 -115.1 800 0.672 -135.4 1000 0.649 -150 ...
Page 13
TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0.4 0.2 0.2 0.4 0.6 0.8 1 -0.2 -0.4 -0.6 -0.8 -1 NE85634 FREQUENCY S 11 (MHz) MAG ANG 100 0.714 -42.6 ...
Page 14
TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0 0.2 0.2 0.4 0.6 0.8 1 -0.2 -0.4 -0.6 -0.8 -1 NE85635 FREQUENCY S 11 (MHz) MAG ANG 100 ...
Page 15
TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0 0.2 0.2 0.4 0.6 0 -0.2 -0.4 -0.6 -0.8 -1 NE85639 FREQUENCY S 11 (MHz) MAG ...
Page 16
NE85618 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 6e-16 MJC BF 120 XCJC NF 0.98 CJS VAF 10 VJS IKF 0.08 MJS ISE 3.2e- 1. XTF NR 0.991 VTF VAR ...
Page 17
NE85619 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 6e-16 MJC BF 120 XCJC NF 0.98 CJS VAF 10 VJS IKF 0.08 MJS ISE 3.2e- 1. XTF NR 0.991 VTF VAR ...
Page 18
NE85630 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 6e-16 MJC BF 120 XCJC NF 0.98 CJS VAF 10 VJS IKF 0.08 MJS ISE 32e- 1. XTF NR 0.991 VTF VAR ...
Page 19
... NE85633 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 6e-16 MJC BF 120 XCJC NF 0.98 CJS VAF 10 VJS IKF 0.08 MJS ISE 32e- 1. XTF NR 0.991 VTF VAR 3.9 ITF IKR 0.17 PTF ISC 0.38 XTB RB 4.16 XTI RBM 3.6 KF IRB 1 ...
Page 20
NE85635 NONLINEAR MODEL SCHEMATIC BASE BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 6e-16 MJC BF 120 XCJC NF 0.98 CJS VAF 10 VJS IKF 0.08 MJS ISE 32e- 1. XTF NR 0.991 VTF VAR ...
Page 21
NE85639 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 6e-16 MJC BF 120 XCJC NF 0.98 CJS VAF 10 VJS IKF 0.08 MJS ISE 3.2e- 1. XTF NR 0.991 VTF VAR ...
Page 22
OUTLINE DIMENSIONS (Units in mm) NE85600 (CHIP) 0.35 0.30 0.22 BASE EMITTER 0.07φ (Chip Thickness: 140 to 160 μm) PACKAGE OUTLINE 18 (SOT-343) 2.1 ± 0.2 1.25 ± 0 0.65 2.0 ± 0.2 0. +0.10 0.4 ...
Page 23
OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 30 (SOT-323) 2.1 ± 0.2 1.25 ± 0.1 2 0.65 2.0 ± 0.2 1 MARKING 1. Emitter 0.15 2. Base 3. Collector 0.9 ± 0 0.1 PACKAGE OUTLINE 32 ...
Page 24
OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 35 (MICRO-X) E 3.8 MIN ALL LEADS 0.5±0. 45˚ E 2.55±0.2 φ2.1 +0.06 0.1 -0.04 PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 -0 2.9 ± 0.2 0.95 0.85 ...
Page 25
... ORDERING INFORMATION (Pb-Free) PART NUMBER QUANTITY NE85600 100 NE85618-T1-A 3000 NE85619-T1-A 3000 NE85630-T1-A 3000 NE85632-A 1 NE85633-T1B-A 3000 NE85634-T1-A 1000 NE85635 1 NE85639-T1-A 3000 NE85639R-T1 3000 Note: 1. Embossed tape 12 mm wide. Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury ...
Page 26
Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...

NE85633-T1B-A

NE85633-T1B-A

Shipping terms

Payment terms

Specifications of NE85633-T1B-A

Related parts for NE85633-T1B-A

NE85633-T1B-A Summary of contents

Related keywords: