FDMS86520L Fairchild Semiconductor, FDMS86520L Datasheet

MOSFET Power 60V N-Channel PowerTrench MOSFET

FDMS86520L

Manufacturer Part Number
FDMS86520L
Description
MOSFET Power 60V N-Channel PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDMS86520L

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
8.2 mOhms
Forward Transconductance Gfs (max / Min)
51 S
Drain-source Breakdown Voltage
60 V
Continuous Drain Current
13.5 A
Power Dissipation
69 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
Power 56
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS86520L
Manufacturer:
FSC
Quantity:
12 000
Part Number:
FDMS86520L
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDMS86520L
0
©2011 Fairchild Semiconductor Corporation
FDMS86520L Rev.C
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMS86520L
N-Channel PowerTrench
60 V, 22 A, 8.2 mΩ
Features
V
V
I
E
P
T
R
R
D
J
DS
GS
AS
D
θJC
θJA
, T
Max r
Max r
Advanced package and silicon combination for low r
high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
Symbol
Device Marking
STG
FDMS86520L
DS(on)
DS(on)
= 8.2 mΩ at V
= 11.7 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Top
GS
GS
FDMS86520L
-Continuous
= 10 V, I
-Continuous (Silicon limited)
-Pulsed
= 4.5 V, I
Device
Power 56
D
D
= 13.5 A
T
= 11.5 A
®
A
= 25 °C unless otherwise noted
D
MOSFET
Parameter
D
D
DS(on)
D
Bottom
Power 56
Package
and
1
S
T
T
T
T
T
S
C
A
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r
diode reverse recovery performance.
Applications
C
C
A
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
Primary Switch in isolated DC-DC
Synchronous Rectifier
Load Switch
S
Pin 1
G
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 3)
D
D
D
D
5
6
7
8
DS(on)
Tape Width
, fast switching speed and body
12 mm
-55 to +150
Ratings
13.5
±20
2.5
1.8
60
22
71
60
91
69
50
www.fairchildsemi.com
3000 units
Quantity
April 2011
4
3
2
1
G
S
S
S
Units
°C/W
mJ
°C
W
V
V
A

Related parts for FDMS86520L

FDMS86520L Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMS86520L FDMS86520L ©2011 Fairchild Semiconductor Corporation FDMS86520L Rev.C ® MOSFET General Description This N-Channel MOSFET has been designed specifically improve the overall efficiency and to minimize switch node = 11 ...

Page 2

... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° 3. Starting mH 13 ©2011 Fairchild Semiconductor Corporation FDMS86520L Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 ° ...

Page 3

... JUNCTION TEMPERATURE ( , T J Figure 3. Normalized On Resistance vs Junction Temperature 60 μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMS86520L Rev °C unless otherwise noted 3 μ s 1.5 2.0 2 100 125 150 100 0 ...

Page 4

... THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE 0 MAX RATED 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMS86520L Rev °C unless otherwise noted J 10000 1000 100 100 100 1000 μ 100 ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 13. ©2011 Fairchild Semiconductor Corporation FDMS86520L Rev °C unless otherwise noted J SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve NOTES: DUTY FACTOR ...

Page 6

... Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDMS86520L Rev.C 6 www.fairchildsemi.com ...

Page 7

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDMS86520L Rev.C Power-SPM™ ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ...

Related keywords