FDMS86105 Fairchild Semiconductor, FDMS86105 Datasheet

MOSFET Power 100V N-Channel PowerTrench MOSFET

FDMS86105

Manufacturer Part Number
FDMS86105
Description
MOSFET Power 100V N-Channel PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDMS86105

Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
6 A
Forward Transconductance Gfs (max / Min)
15 S
Drain-source Breakdown Voltage
100 V
Continuous Drain Current
6 A
Power Dissipation
48 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
Power-56
Lead Free Status / Rohs Status
 Details

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Part Number
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Quantity
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Company:
Part Number:
FDMS86105
Quantity:
100
©2011 Fairchild Semiconductor Corporation
FDMS86105 Rev.C
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMS86105
N-Channel PowerTrench
100 V, 26 A, 34 mΩ
Features
V
V
I
E
P
T
R
R
D
J
DS
GS
AS
D
θJC
θJA
, T
Max r
Max r
Advanced package and silicon combination for low r
high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
Symbol
Device Marking
STG
FDMS86105
DS(on)
DS(on)
= 34 mΩ at V
= 54 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Top
GS
GS
FDMS86105
= 10 V, I
= 6 V, I
-Continuous
-Continuous (Silicon limited)
-Pulsed
Device
Power 56
D
D
= 4.5 A
= 6 A
T
®
A
= 25 °C unless otherwise noted
D
MOSFET
Parameter
D
D
DS(on)
D
Bottom
Power 56
Package
and
1
S
T
T
T
T
T
S
C
A
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Applications
C
C
A
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
Primary DC-DC
Secondary DC-DC
Load Switch
S
Pin 1
G
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 3)
D
D
D
D
5
6
7
8
Tape Width
12 mm
-55 to +150
Ratings
100
±20
2.5
2.6
56
26
30
50
48
50
6
®
process that has
January 2011
www.fairchildsemi.com
3000 units
Quantity
4
3
2
1
G
S
S
S
Units
°C/W
mJ
°C
W
V
V
A

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FDMS86105 Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMS86105 FDMS86105 ©2011 Fairchild Semiconductor Corporation FDMS86105 Rev.C ® MOSFET General Description This N-Channel MOSFET is produced using Fairchild = Semiconductor’s advanced Power Trench = 4 been especially tailored to minimize the on-state resistance and yet maintain superior switching performance ...

Page 2

... Notes determined with the device mounted θJA the user's board design. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° 3. Starting mH ©2011 Fairchild Semiconductor Corporation FDMS86105 Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 ° ...

Page 3

... JUNCTION TEMPERATURE ( , T J Figure 3. Normalized On Resistance vs Junction Temperature 30 μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMS86105 Rev °C unless otherwise noted μ 160 120 100 125 150 0 - ...

Page 4

... Switching Capability THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE 0 MAX RATED 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMS86105 Rev °C unless otherwise noted J 1000 100 100 1000 μ ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.001 - Figure 13. ©2011 Fairchild Semiconductor Corporation FDMS86105 Rev °C unless otherwise noted J SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve NOTES: DUTY FACTOR ...

Page 6

... Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDMS86105 Rev.C 6 www.fairchildsemi.com ...

Page 7

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDMS86105 Rev.C ® PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ...

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