IPD50N06S3-09 Infineon Technologies

MOSFET Power OPTIMOS-T N-CH 55V 50A 9.0mOhms

IPD50N06S3-09

Manufacturer Part Number

IPD50N06S3-09

Description

MOSFET Power OPTIMOS-T N-CH 55V 50A 9.0mOhms

Manufacturer

Infineon Technologies

Specifications of IPD50N06S3-09

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

9 m Ohms

Drain-source Breakdown Voltage

55 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

50 A

Power Dissipation

107 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Package / Case

TO-252

Minimum Operating Temperature

- 55 C

Lead Free Status / Rohs Status

Details

Other names

IPD50N06S309XT

Related parts for IPD50N06S3-09

Related keywords

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