NTD2955 ON Semiconductor, NTD2955 Datasheet
NTD2955
Manufacturer Part Number
NTD2955
Description
MOSFET Power -60V -12A P-Channel
Manufacturer
ON Semiconductor
Specifications of NTD2955
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.155 Ohms
Forward Transconductance Gfs (max / Min)
8 S
Drain-source Breakdown Voltage
- 60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 12 A
Power Dissipation
55 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
DPAK
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
Details
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NTD2955
Power MOSFET
avalanche and commutation modes. Designed for low−voltage, high−
speed switching applications in power supplies, converters, and power
motor controls. These devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer an additional safety margin against unexpected
voltage transients.
Features
•
•
•
•
© Semiconductor Components Industries, LLC, 2005
May, 2005 − Rev. 8
−60 V, −12 A, P−Channel DPAK
MAXIMUM RATINGS
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using 1 in pad size
2. When surface mounted to an FR4 board using the minimum recommended
Drain−to−Source Voltage
Gate−to−Source Voltage
Drain Current
Drain Current
Drain Current
Total Power Dissipation @ T
Operating and Storage Temperature
Single Pulse Drain−to−Source Avalanche
Thermal Resistance
Maximum Lead Temperature for Soldering
This Power MOSFET is designed to withstand high energy in the
to Withstand High Energy in the Avalanche and Commutation Modes
Avalanche Energy Specified
I
Designed for Low−Voltage, High−Speed Switching Applications and
Pb−Free Packages are Available
DSS
− Continuous
− Non−repetitive (t
Range
Energy − Starting T
(V
I
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Purposes, 1/8 in. from case for
10 seconds
(Cu area = 1.127 in
pad size (Cu area = 0.412 in
L
DD
= 12 Apk, L = 3.0 mH, R
and V
= 25 Vdc, V
DS(on)
− Continuous @ T
− Single Pulse (t
Rating
GS
Specified at Elevated Temperature
p
2
J
≤ 10 ms)
).
= 10 Vdc, Peak
= 25°C
(T
J
= 25°C unless otherwise noted)
a
G
= 25°C
p
= 25 W)
2
a
≤ 10 ms)
).
= 25°C
Symbol
T
V
V
R
R
R
V
J
E
I
P
GSM
, T
DSS
DM
T
I
qJC
qJA
qJA
GS
AS
D
D
L
stg
−55 to
Value
± 20
± 25
2.73
71.4
−60
−12
−36
175
216
100
260
55
1
°C/W
Unit
Vdc
Vdc
Vpk
Adc
Apk
mJ
°C
°C
W
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
1 2
V
1
(BR)DSS
−60 V
2
3
3
NT2955
A
Y
W
ORDERING INFORMATION
4
4
G
155 mW @ −10 V, 6 A
http://onsemi.com
CASE 369D
CASE 369C
R
STYLE 2
DPAK−3
STYLE 2
DS(on)
Device Code
= Assembly Location
= Year
= Work Week
P−Channel
DPAK
D
Publication Order Number:
TYP
S
Gate
Gate
DIAGRAMS
MARKING
1
1
Drain
Drain
Drain
Drain
4
2
4
2
NTD2955/D
I
D
−12 A
3
Source
3
Source
MAX
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