NVTFS5826NLTAG ON Semiconductor, NVTFS5826NLTAG Datasheet

MOSFET Power Single N-Channel 60V,20A,24mohm

NVTFS5826NLTAG

Manufacturer Part Number
NVTFS5826NLTAG
Description
MOSFET Power Single N-Channel 60V,20A,24mohm
Manufacturer
ON Semiconductor
Datasheet

Specifications of NVTFS5826NLTAG

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
24 mOhms
Forward Transconductance Gfs (max / Min)
8 S
Drain-source Breakdown Voltage
60 V
Continuous Drain Current
20 A
Power Dissipation
22 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
WDFN-8
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NVTFS5826NLTAG
Manufacturer:
ALTERA
Quantity:
1 200
Part Number:
NVTFS5826NLTAG
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
NVTFS5826NLTAG
0
Company:
Part Number:
NVTFS5826NLTAG
Quantity:
25 000
Company:
Part Number:
NVTFS5826NLTAG
Quantity:
200
NVTFS5826NL
Power MOSFET
60 V, 24 mW, 20 A, Single N−Channel
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The entire application environment impacts the thermal resistance values shown,
2. Psi (Y) is used as required per JESD51−12 for packages in which
3. Surface−mounted on FR4 board using a 650 mm
4. Continuous DC current rating. Maximum current for pulses as long as 1
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2011
January, 2011 − Rev. 0
THERMAL RESISTANCE MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent R
2, 3, 4)
Power Dissipation
R
Continuous Drain Cur-
rent R
3, 4)
Power Dissipation
R
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (T
I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Junction−to−Mounting Board (top) − Steady
State (Note 2 and 3)
Junction−to−Ambient − Steady State (Note 3)
L(pk)
AEC−Q101 Qualified Site and Change Controls
Small Footprint (3.3 x 3.3 mm) for Compact Design
Low R
Low Capacitance to Minimize Driver Losses
NV Prefix for Automotive and Other Applications Requiring
These are Pb−Free Devices
YJ−mb
qJA
they are not constants and are only valid for the particular conditions noted.
substantially less than 100% of the heat flows to single case surface.
second is higher but is dependent on pulse duration and duty cycle.
(Notes 1, 3)
= 20 A, L = 0.1 mH, R
YJ−mb
qJA
(Notes 1, 2, 3)
DS(on)
J
(Notes 1 &
= 25°C, V
(Notes 1,
to Minimize Conduction Losses
Parameter
Parameter
DD
(T
= 24 V, V
Steady
Steady
T
J
State
State
A
G
= 25°C unless otherwise noted)
= 25°C, t
= 25 W)
GS
T
T
T
T
T
T
mb
mb
T
T
mb
mb
A
A
= 10 V,
A
A
p
= 100°C
= 100°C
= 25°C
= 25°C
= 100°C
= 100°C
= 10 ms
= 25°C
= 25°C
Symbol
R
Symbol
T
2
R
YJ−mb
V
J
, 2 oz. Cu pad.
V
E
I
P
P
, T
DSS
DM
T
qJA
I
I
I
GS
AS
D
D
S
D
D
L
(Note 1)
stg
Value
−55 to
Value
+175
6.8
±20
127
260
47
7.6
5.4
3.2
1.6
60
20
14
22
18
20
11
1
°C/W
Unit
Unit
mJ
°C
°C
W
W
V
V
A
A
A
A
†For information on tape and reel specifications,
NVTFS5826NLTAG
NVTFS5826NLTWG
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
V
CASE 511AB
(BR)DSS
60 V
(Note: Microdot may be in either location)
WDFN8
(m8FL)
Device
G (4)
5826
A
Y
WW
G
ORDERING INFORMATION
1
http://onsemi.com
D (5 − 8)
32 mW @ 4.5 V
24 mW @ 10 V
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
R
N−Channel
DS(on)
(Pb−Free)
(Pb−Free)
Package
MARKING DIAGRAM
WDFN8
WDFN8
Publication Order Number:
G
S
S
S
MAX
1
S (1, 2, 3)
AYWWG
5826
NVTFS5826NL/D
G
1500 / Tape &
5000 / Tape &
Shipping
I
D
Reel
Reel
20 A
MAX
D
D
D
D

Related parts for NVTFS5826NLTAG

Related keywords