NVTFS5116PLTAG ON Semiconductor, NVTFS5116PLTAG Datasheet

MOSFET Power Single P-Channel 60V,14A,52mohm

NVTFS5116PLTAG

Manufacturer Part Number

NVTFS5116PLTAG

Description

MOSFET Power Single P-Channel 60V,14A,52mohm

Manufacturer

ON Semiconductor

Datasheets

1.NVTFS5116PL.pdf (6 pages)

2.NVTFS5116PLTWG.pdf (6 pages)

Specifications of NVTFS5116PLTAG

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

52 mOhms

Forward Transconductance Gfs (max / Min)

11 S

Drain-source Breakdown Voltage

- 60 V

Continuous Drain Current

- 14 A

Power Dissipation

21 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Package / Case

WDFN-8

Lead Free Status / Rohs Status

Details

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NVTFS5116PL

Power MOSFET

−60 V, −14 A, 52 mW, Single P−Channel

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. The entire application environment impacts the thermal resistance values shown,

2. Psi (Y) is used as required per JESD51−12 for packages in which

3. Surface−mounted on FR4 board using a 650 mm

4. Continuous DC current rating. Maximum current for pulses as long as 1

MAXIMUM RATINGS

January, 2011 − Rev. 0

THERMAL RESISTANCE MAXIMUM RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain Cur-

rent R

2, 3, 4)

Power Dissipation

Continuous Drain Cur-

rent R

3, 4)

Power Dissipation

Pulsed Drain Current

Operating Junction and Storage Temperature

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

Energy (T

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

Junction−to−Mounting Board (top) − Steady

State (Note 2 and 3)

Junction−to−Ambient − Steady State (Note 3)

L(pk)

AEC−Q101 Qualified Site and Change Controls

Small Footprint (3.3 x 3.3 mm) for Compact Design

Low R

Low Capacitance to Minimize Driver Losses

NV Prefix for Automotive and Other Applications Requiring

These are Pb−Free Devices

YJ−mb

qJA

they are not constants and are only valid for the particular conditions noted.

substantially less than 100% of the heat flows to single case surface.

second is higher but is dependent on pulse duration and duty cycle.

(Notes 1, 3)

= 30 A, L = 0.1 mH, R

YJ−mb

qJA

(Notes 1, 2, 3)

DS(on)

(Notes 1 &

= 25°C, V

(Notes 1,

to Minimize Conduction Losses

Parameter

= 50 V, V

Steady

State

= 25°C unless otherwise noted)

= 25°C, t

= 25 W)

= 10 V,

= 100°C

= 25°C

= 100°C

= 10 ms

= 25°C

Symbol

YJ−mb

, 2 oz. Cu pad.

, T

DSS

qJA

(Note 1)

stg

Value

−55 to

Value

−126

+175

7.2

−60

±20

−14

−10

−17

260

3.2

1.6

−6

−4

°C/W

Unit

°C

NVTFS5116PLTAG

NVTFS5116PLTWG

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

CASE 511AB

(BR)DSS

−60 V

(Note: Microdot may be in either location)

Device

WDFN8

(m8FL)

ORDERING INFORMATION

5116

G (4)

http://onsemi.com

P−Channel MOSFET

72 mW @ −4.5 V

52 mW @ −10 V

= Specific Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

D (5−8)

DS(on)

(Pb−Free)

Package

WDFN8

MARKING DIAGRAM

Publication Order Number:

MAX

S (1,2,3)

AYWWG

1500/Tape & Reel

5000/Tape & Reel

5116

NVTFS5116PL/D

Shipping

−14 A

MAX

†

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