PSMN015-100P NXP Semiconductors, PSMN015-100P Datasheet
PSMN015-100P
Specifications of PSMN015-100P
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PSMN015-100P Summary of contents
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... PSMN015-100P N-channel TrenchMOS SiliconMAX standard level FET Rev. 06 — 17 December 2009 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... Figure ≤ 10 µs; pulsed °C; see °C; see Figure °C mb ≤ 10 µs; pulsed ° ° j(init Ω unclamped 0.11 ms Rev. 06 — 17 December 2009 PSMN015-100P Graphic symbol mbb076 3 Version SOT78 Min Max - 100 - 100 - 60.8 and Figure 3 - 240 - 300 -55 175 -55 175 - ...
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... P der (%) 150 200 0 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature = V /I DSon Rev. 06 — 17 December 2009 PSMN015-100P 03aa16 50 100 150 T (°C) mb 03am53 = 10 μs p 100 μ (V) DS © NXP B.V. 2009. All rights reserved. 200 ...
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... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN015-100P_6 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET Conditions see Figure 4 vertical in still air −4 − Rev. 06 — 17 December 2009 PSMN015-100P Min Typ Max - - 0 03am52 t p δ = ...
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... see Figure see Figure MHz see Figure 12 = 1.8 Ω 5.6 Ω °C G(ext °C; see /dt = -100 A/µ ° Rev. 06 — 17 December 2009 PSMN015-100P Min Typ Max 100 - - Figure Figure 4.4 Figure 0. 500 Figure 100 Figure 100 - 32.4 40 ° ° °C; - 4900 ...
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... Transfer characteristics: drain current as a function of gate-source voltage; typical values 03aa35 5 V GS(th) (V) max − (V) GS Fig 8. Gate-source threshold voltage as a function of junction temperature Rev. 06 — 17 December 2009 PSMN015-100P 03am56 V > DSon 175 ° ° (V) GS 03aa32 max typ min 0 60 ...
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... C (pF 100 − (nC) G Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 06 — 17 December 2009 PSMN015-100P 03al21 0 60 120 180 T (°C) j 03am58 C iss C oss C rss (V) © NXP B.V. 2009. All rights reserved. ...
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... Fig 13. Source current as a function of source-drain voltage; typical values PSMN015-100P_6 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET 100 ( 175 ° ° 0.3 0.6 0.9 Rev. 06 — 17 December 2009 PSMN015-100P 03am57 1.2 V (V) SD © NXP B.V. 2009. All rights reserved ...
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... 0.7 16.0 6.6 10.3 15.0 2.54 0.4 15.2 5.9 9.7 12.8 REFERENCES JEDEC JEITA SC-46 3-lead TO-220AB Rev. 06 — 17 December 2009 PSMN015-100P mounting base Q c ( max. 3.30 3.8 3.0 2.6 3.0 2.79 3.5 2.7 2.2 EUROPEAN ISSUE DATE PROJECTION ...
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... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number PSMN015-100P separated from data sheet PSMN015_100P_100B-05. Product data - Product specification - Product specification - ...
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... Export might require a prior authorization from national authorities. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS— trademark of NXP B.V. to:salesaddresses@nxp.com Rev. 06 — 17 December 2009 PSMN015-100P © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 17 December 2009 Document identifier: PSMN015-100P_6 ...