MOSFET Power RAIL PWR-MOS

PSMN015-100P

Manufacturer Part NumberPSMN015-100P
DescriptionMOSFET Power RAIL PWR-MOS
ManufacturerNXP Semiconductors
PSMN015-100P datasheet
 


Specifications of PSMN015-100P

ConfigurationSingleTransistor PolarityN-Channel
Resistance Drain-source Rds (on)0.015 OhmsDrain-source Breakdown Voltage100 V
Gate-source Breakdown Voltage+/- 20 VContinuous Drain Current75 A
Power Dissipation300 WMaximum Operating Temperature+ 175 C
Mounting StyleThrough HolePackage / CaseTO-220AB
Minimum Operating Temperature- 55 CLead Free Status / Rohs Status Details
Other namesPSMN015-100P,127  
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PSMN015-100P
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 06 — 17 December 2009
1. Product profile
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
1.3 Applications
DC-to-DC convertors
1.4 Quick reference data
Table 1.
Symbol Parameter
V
drain-source voltage T
DS
I
drain current
D
P
total power
tot
dissipation
Dynamic characteristics
Q
gate-drain charge
GD
Static characteristics
R
drain-source
DSon
on-state resistance
Quick reference
Conditions
≥ 25 °C; T
≤ 175 °C
j
j
T
= 25 °C; V
mb
GS
see
Figure 1
and
T
= 25 °C;
mb
see
Figure 2
V
= 10 V; I
= 75 A;
GS
D
V
= 80 V; T
= 25 °C;
DS
j
see
Figure 11
V
= 10 V; I
= 25 A;
GS
D
T
= 25 °C; see
j
Product data sheet
Rated for avalanche ruggedness
Switched-mode power supplies
Min
Typ
Max
-
-
100
= 10 V;
-
-
75
3
-
-
300
-
35
-
-
12
15
Figure 9
and
10
Unit
V
A
W
nC
mΩ

PSMN015-100P Summary of contents

  • Page 1

    ... PSMN015-100P N-channel TrenchMOS SiliconMAX standard level FET Rev. 06 — 17 December 2009 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...

  • Page 2

    ... Figure ≤ 10 µs; pulsed °C; see °C; see Figure °C mb ≤ 10 µs; pulsed ° ° j(init Ω unclamped 0.11 ms Rev. 06 — 17 December 2009 PSMN015-100P Graphic symbol mbb076 3 Version SOT78 Min Max - 100 - 100 - 60.8 and Figure 3 - 240 - 300 -55 175 -55 175 - ...

  • Page 3

    ... P der (%) 150 200 0 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature = V /I DSon Rev. 06 — 17 December 2009 PSMN015-100P 03aa16 50 100 150 T (°C) mb 03am53 = 10 μs p 100 μ (V) DS © NXP B.V. 2009. All rights reserved. 200 ...

  • Page 4

    ... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN015-100P_6 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET Conditions see Figure 4 vertical in still air −4 − Rev. 06 — 17 December 2009 PSMN015-100P Min Typ Max - - 0 03am52 t p δ = ...

  • Page 5

    ... see Figure see Figure MHz see Figure 12 = 1.8 Ω 5.6 Ω °C G(ext °C; see /dt = -100 A/µ ° Rev. 06 — 17 December 2009 PSMN015-100P Min Typ Max 100 - - Figure Figure 4.4 Figure 0. 500 Figure 100 Figure 100 - 32.4 40 ° ° °C; - 4900 ...

  • Page 6

    ... Transfer characteristics: drain current as a function of gate-source voltage; typical values 03aa35 5 V GS(th) (V) max − (V) GS Fig 8. Gate-source threshold voltage as a function of junction temperature Rev. 06 — 17 December 2009 PSMN015-100P 03am56 V > DSon 175 ° ° (V) GS 03aa32 max typ min 0 60 ...

  • Page 7

    ... C (pF 100 − (nC) G Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 06 — 17 December 2009 PSMN015-100P 03al21 0 60 120 180 T (°C) j 03am58 C iss C oss C rss (V) © NXP B.V. 2009. All rights reserved. ...

  • Page 8

    ... Fig 13. Source current as a function of source-drain voltage; typical values PSMN015-100P_6 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET 100 ( 175 ° ° 0.3 0.6 0.9 Rev. 06 — 17 December 2009 PSMN015-100P 03am57 1.2 V (V) SD © NXP B.V. 2009. All rights reserved ...

  • Page 9

    ... 0.7 16.0 6.6 10.3 15.0 2.54 0.4 15.2 5.9 9.7 12.8 REFERENCES JEDEC JEITA SC-46 3-lead TO-220AB Rev. 06 — 17 December 2009 PSMN015-100P mounting base Q c ( max. 3.30 3.8 3.0 2.6 3.0 2.79 3.5 2.7 2.2 EUROPEAN ISSUE DATE PROJECTION ...

  • Page 10

    ... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number PSMN015-100P separated from data sheet PSMN015_100P_100B-05. Product data - Product specification - Product specification - ...

  • Page 11

    ... Export might require a prior authorization from national authorities. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS— trademark of NXP B.V. to:salesaddresses@nxp.com Rev. 06 — 17 December 2009 PSMN015-100P © NXP B.V. 2009. All rights reserved ...

  • Page 12

    ... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 17 December 2009 Document identifier: PSMN015-100P_6 ...