PSMN015-100P NXP Semiconductors, PSMN015-100P Datasheet - Page 10

• Manufacturer Part Number: PSMN015-100P
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of PSMN015-100P

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.015 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: PSMN015-100P,127

NXP Semiconductors
8. Revision history
Table 7.
PSMN015-100P_6
Product data sheet
Document ID
PSMN015-100P_6
Modifications:
PSMN015_100P_100B-05
PSMN015-100_SERIES_4
PSMN015-100_SERIES_HG_3 20000328
PSMN015-100_SERIES_2
PSMN015-100_SERIES_1
Revision history
Release date Data sheet status
20091217
20040114
20030601
19990801
19990201
•
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number PSMN015-100P separated from data sheet PSMN015_100P_100B-05.
Rev. 06 — 17 December 2009
Product data sheet
Product data
Product specification -
Product specification -
Product specification -
Product specification -
N-channel TrenchMOS SiliconMAX standard level FET
Change notice Supersedes
-
-
PSMN015-100P
PSMN015_100P_100B-05
PSMN015-100_SERIES_4
PSMN015-100_SERIES_HG_3
PSMN015-100_SERIES_2
PSMN015-100_SERIES_1
-
© NXP B.V. 2009. All rights reserved.
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