PSMN015-100P NXP Semiconductors, PSMN015-100P Datasheet - Page 3

• Manufacturer Part Number: PSMN015-100P
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of PSMN015-100P

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.015 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: PSMN015-100P,127

NXP Semiconductors
PSMN015-100P_6
Product data sheet
Fig 1.
Fig 3.
I
(%)
der
120
80
40
0
function of mounting base temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
50
(A)
I
D
10
10
10
1
3
2
1
100
Limit R
DSon
150
T
= V
mb
DS
03an67
(°C)
/I
Rev. 06 — 17 December 2009
D
10
200
DC
N-channel TrenchMOS SiliconMAX standard level FET
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
t
100 μ s
1 ms
10 ms
2
p
= 10 μs
50
V
DS
(V)
PSMN015-100P
100
03am53
10
3
150
© NXP B.V. 2009. All rights reserved.
T
mb
03aa16
(°C)
200
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