PSMN015-100P NXP Semiconductors, PSMN015-100P Datasheet - Page 4

• Manufacturer Part Number: PSMN015-100P
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of PSMN015-100P

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.015 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: PSMN015-100P,127

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN015-100P_6
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Z
(K/W)
th(j-mb)
10
10
10
10
−1
−2
−3
1
10
−5
δ
0.2
0.1
0.05
0.02
= 0.5
single pulse
10
−4
Rev. 06 — 17 December 2009
Conditions
see
vertical in still air
Figure 4
N-channel TrenchMOS SiliconMAX standard level FET
10
−3
10
P
−2
t
p
T
t
p
PSMN015-100P
(s)
Min
-
-
δ =
03am52
t
T
t
p
10
60
Typ
-
−1
© NXP B.V. 2009. All rights reserved.
Max
0.5
-
Unit
K/W
K/W
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