PSMN015-100P NXP Semiconductors, PSMN015-100P Datasheet - Page 9

MOSFET Power RAIL PWR-MOS

PSMN015-100P

Manufacturer Part Number
PSMN015-100P
Description
MOSFET Power RAIL PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN015-100P

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.015 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
 Details
Other names
PSMN015-100P,127

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PSMN015-100P
Manufacturer:
NXP
Quantity:
30 000
Part Number:
PSMN015-100P
Manufacturer:
NXP
Quantity:
12 500
NXP Semiconductors
7. Package outline
Fig 14. Package outline SOT78 (TO-220AB)
PSMN015-100P_6
Product data sheet
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
DIMENSIONS (mm are the original dimensions)
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
UNIT
mm
VERSION
OUTLINE
SOT78
4.7
4.1
A
1.40
1.25
A
1
0.9
0.6
b
IEC
b
1.6
1.0
1
(2)
D
L
b
L
1.3
1.0
2
D
1
(2)
(1)
1
b
b
3-lead TO-220AB
(3×)
(2×)
1
2
(2)
(2)
0.7
0.4
JEDEC
c
1
16.0
15.2
REFERENCES
e
D
Rev. 06 — 17 December 2009
E
p
2
e
6.6
5.9
D
0
1
3
10.3
JEITA
SC-46
b(3×)
9.7
E
N-channel TrenchMOS SiliconMAX standard level FET
L
scale
2
q
5
(1)
2.54
e
15.0
12.8
10 mm
L
mounting
L
3.30
2.79
base
1
(1)
max.
L
3.0
2
(1)
Q
A
3.8
3.5
PSMN015-100P
p
A
PROJECTION
EUROPEAN
1
c
3.0
2.7
q
2.6
2.2
Q
© NXP B.V. 2009. All rights reserved.
ISSUE DATE
08-04-23
08-06-13
SOT78
9 of 12

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