MOSFET Power RAIL PWR-MOS

PSMN015-110P

Manufacturer Part NumberPSMN015-110P
DescriptionMOSFET Power RAIL PWR-MOS
ManufacturerNXP Semiconductors
PSMN015-110P datasheet
 


Specifications of PSMN015-110P

ConfigurationSingleTransistor PolarityN-Channel
Resistance Drain-source Rds (on)0.0405 OhmsDrain-source Breakdown Voltage110 V
Gate-source Breakdown Voltage+/- 20 VContinuous Drain Current75 A
Power Dissipation300 WMaximum Operating Temperature+ 175 C
Mounting StyleThrough HolePackage / CaseTO-220AB
Minimum Operating Temperature- 55 CLead Free Status / Rohs Status Details
Other namesPSMN015-110P,127  
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PSMN015-110P
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 02 — 6 October 2009
1. Product profile
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
1.3 Applications
DC-to-DC convertors
1.4 Quick reference data
Table 1.
Symbol Parameter
V
drain-source voltage
DS
I
drain current
D
P
total power dissipation
tot
Dynamic characteristics
Q
gate-drain charge
GD
Static characteristics
R
drain-source on-state
DSon
resistance
Quick reference
Conditions
≥ 25 °C; T
T
j
T
= 25 °C; V
mb
see
Figure 1
T
= 25 °C; see
mb
V
= 10 V; I
GS
V
= 80 V; T
DS
see
Figure 11
V
= 10 V; I
GS
T
= 25 °C; see
j
and
10
Product data sheet
Simple gate drive required due to low
gate charge
Switched-mode power supplies
Min
Typ
Max
≤ 175 °C
-
-
110
j
= 10 V;
-
-
75
GS
and
3
Figure 2
-
-
300
= 75 A;
-
35
-
D
= 25 °C;
j
= 25 A;
-
12
15
D
Figure 9
Unit
V
A
W
nC
mΩ

PSMN015-110P Summary of contents

  • Page 1

    ... PSMN015-110P N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 — 6 October 2009 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...

  • Page 2

    ... TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB PSMN015-110P_2 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET Simplified outline SOT78 (TO-220AB) Rev. 02 — 6 October 2009 PSMN015-110P Graphic symbol mbb076 Version SOT78 © NXP B.V. 2009. All rights reserved ...

  • Page 3

    ... D ≤ unclamped 0.11 ms; sup Ω 03an67 120 P der (%) 150 200 0 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature Rev. 02 — 6 October 2009 PSMN015-110P Min Max - 110 - 110 -20 20 and Figure 1 - 60.8 Figure 3 - 240 - 300 -55 175 -55 175 - 75 - ...

  • Page 4

    ... Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN015-110P_2 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET = DSon Rev. 02 — 6 October 2009 PSMN015-110P 03ao25 = 10 μ 100 μ (V) DS © NXP B.V. 2009. All rights reserved. ...

  • Page 5

    ... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN015-110P_2 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET Conditions see Figure 4 −4 − Rev. 02 — 6 October 2009 PSMN015-110P Min Typ Max - - 0 03am52 t p δ ...

  • Page 6

    ... Figure 9 and °C; see Figure MHz °C; see Figure 1.8 Ω 5.6 Ω °C G(ext ° see Figure /dt = -100 A/µ ° Rev. 02 — 6 October 2009 PSMN015-110P Min Typ Max Unit 110 - - 4 0.05 10 µ 500 µ 100 100 nA - 32.4 40.5 mΩ mΩ ...

  • Page 7

    ... Output characteristics: drain current as a function of drain-source voltage; typical values 03am56 5 V GS(th) ( ° − (V) GS Fig 8. Gate-source threshold voltage as a function of junction temperature Rev. 02 — 6 October 2009 PSMN015-110P 03am54 5.6 V 5.4 V 5 ° 5 4.8 V 4 0.2 0.4 0.6 0 03aa32 max ...

  • Page 8

    ... C (pF 100 − (nC) G Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 02 — 6 October 2009 PSMN015-110P 03al21 0 60 120 180 T (°C) j 03am58 C iss C oss C rss (V) © NXP B.V. 2009. All rights reserved. ...

  • Page 9

    ... Fig 13. Source current as a function of source-drain voltage; typical values PSMN015-110P_2 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET 100 ( 175 ° ° 0.3 0.6 0.9 Rev. 02 — 6 October 2009 PSMN015-110P 03am57 1.2 V (V) SD © NXP B.V. 2009. All rights reserved ...

  • Page 10

    ... 0.7 16.0 6.6 10.3 15.0 2.54 0.4 15.2 5.9 9.7 12.8 REFERENCES JEDEC JEITA SC-46 3-lead TO-220AB Rev. 02 — 6 October 2009 PSMN015-110P mounting base Q c ( max. 3.30 3.8 3.0 2.6 3.0 2.79 3.5 2.7 2.2 EUROPEAN ISSUE DATE PROJECTION ...

  • Page 11

    ... Legal texts have been adapted to the new company name where appropriate. PSMN015_110P-01 20040108 PSMN015-110P_2 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET Data sheet status Change notice Product data sheet - Product data sheet - Rev. 02 — 6 October 2009 PSMN015-110P Supersedes PSMN015_110P-01 - © NXP B.V. 2009. All rights reserved ...

  • Page 12

    ... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 6 October 2009 PSMN015-110P © NXP B.V. 2009. All rights reserved ...

  • Page 13

    ... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 6 October 2009 Document identifier: PSMN015-110P_2 ...