PSMN015-110P NXP Semiconductors, PSMN015-110P Datasheet
PSMN015-110P
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PSMN015-110P Summary of contents
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... PSMN015-110P N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 — 6 October 2009 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB PSMN015-110P_2 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET Simplified outline SOT78 (TO-220AB) Rev. 02 — 6 October 2009 PSMN015-110P Graphic symbol mbb076 Version SOT78 © NXP B.V. 2009. All rights reserved ...
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... D ≤ unclamped 0.11 ms; sup Ω 03an67 120 P der (%) 150 200 0 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature Rev. 02 — 6 October 2009 PSMN015-110P Min Max - 110 - 110 -20 20 and Figure 1 - 60.8 Figure 3 - 240 - 300 -55 175 -55 175 - 75 - ...
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... Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN015-110P_2 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET = DSon Rev. 02 — 6 October 2009 PSMN015-110P 03ao25 = 10 μ 100 μ (V) DS © NXP B.V. 2009. All rights reserved. ...
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... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN015-110P_2 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET Conditions see Figure 4 −4 − Rev. 02 — 6 October 2009 PSMN015-110P Min Typ Max - - 0 03am52 t p δ ...
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... Figure 9 and °C; see Figure MHz °C; see Figure 1.8 Ω 5.6 Ω °C G(ext ° see Figure /dt = -100 A/µ ° Rev. 02 — 6 October 2009 PSMN015-110P Min Typ Max Unit 110 - - 4 0.05 10 µ 500 µ 100 100 nA - 32.4 40.5 mΩ mΩ ...
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... Output characteristics: drain current as a function of drain-source voltage; typical values 03am56 5 V GS(th) ( ° − (V) GS Fig 8. Gate-source threshold voltage as a function of junction temperature Rev. 02 — 6 October 2009 PSMN015-110P 03am54 5.6 V 5.4 V 5 ° 5 4.8 V 4 0.2 0.4 0.6 0 03aa32 max ...
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... C (pF 100 − (nC) G Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 02 — 6 October 2009 PSMN015-110P 03al21 0 60 120 180 T (°C) j 03am58 C iss C oss C rss (V) © NXP B.V. 2009. All rights reserved. ...
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... Fig 13. Source current as a function of source-drain voltage; typical values PSMN015-110P_2 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET 100 ( 175 ° ° 0.3 0.6 0.9 Rev. 02 — 6 October 2009 PSMN015-110P 03am57 1.2 V (V) SD © NXP B.V. 2009. All rights reserved ...
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... 0.7 16.0 6.6 10.3 15.0 2.54 0.4 15.2 5.9 9.7 12.8 REFERENCES JEDEC JEITA SC-46 3-lead TO-220AB Rev. 02 — 6 October 2009 PSMN015-110P mounting base Q c ( max. 3.30 3.8 3.0 2.6 3.0 2.79 3.5 2.7 2.2 EUROPEAN ISSUE DATE PROJECTION ...
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... Legal texts have been adapted to the new company name where appropriate. PSMN015_110P-01 20040108 PSMN015-110P_2 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET Data sheet status Change notice Product data sheet - Product data sheet - Rev. 02 — 6 October 2009 PSMN015-110P Supersedes PSMN015_110P-01 - © NXP B.V. 2009. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 6 October 2009 PSMN015-110P © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 6 October 2009 Document identifier: PSMN015-110P_2 ...