PSMN015-110P NXP Semiconductors, PSMN015-110P Datasheet - Page 13

MOSFET Power RAIL PWR-MOS

PSMN015-110P

Manufacturer Part Number
PSMN015-110P
Description
MOSFET Power RAIL PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN015-110P

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0405 Ohms
Drain-source Breakdown Voltage
110 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
 Details
Other names
PSMN015-110P,127

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PSMN015-110P
Manufacturer:
NEC
Quantity:
40 000
Part Number:
PSMN015-110P
Manufacturer:
IDT
Quantity:
396
Part Number:
PSMN015-110P
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
PSMN015-110P
Manufacturer:
NXP
Quantity:
6 310
Company:
Part Number:
PSMN015-110P
Quantity:
250
Part Number:
PSMN015-110P,127
Manufacturer:
Infineon
Quantity:
500
NXP Semiconductors
11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
10
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
Contact information. . . . . . . . . . . . . . . . . . . . . .12
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
N-channel TrenchMOS SiliconMAX standard level FET
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PSMN015-110P
Document identifier: PSMN015-110P_2
Date of release: 6 October 2009
All rights reserved.

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