PSMN015-110P NXP Semiconductors, PSMN015-110P Datasheet - Page 6

• Manufacturer Part Number: PSMN015-110P
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of PSMN015-110P

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0405 Ohms
• Drain-source Breakdown Voltage: 110 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: PSMN015-110P,127

NXP Semiconductors
6. Characteristics
Table 6.
PSMN015-110P_2
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
r
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
I
T
V
T
V
R
I
see
I
V
D
D
D
D
D
D
S
S
j
j
DS
DS
GS
GS
GS
GS
DS
DS
G(ext)
DS
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 75 A; V
= 25 °C; see
= 25 °C; see
= 25 A; V
= 20 A; dI
Figure 8
Figure 8
Figure 8
Figure 9
Figure 9
Figure 13
= 100 V; V
= 100 V; V
= 25 V; V
= 50 V; R
= 25 V; T
= 20 V; V
= -20 V; V
= 10 V; I
= 10 V; I
= 5.6 Ω; T
GS
DS
Rev. 02 — 6 October 2009
S
DS
DS
DS
D
D
and
and
/dt = -100 A/µs; V
j
GS
DS
L
GS
GS
DS
= 25 °C
= 25 A; T
= 25 A; T
= 80 V; V
= 0 V; T
GS
GS
= V
= V
= V
Figure 11
Figure 12
= 1.8 Ω; V
= 0 V; T
= 0 V; f = 1 MHz;
j
= 0 V; T
= 0 V; T
10
10
= 0 V; T
= 25 °C
= 0 V; T
= 0 V; T
GS
GS
GS
; T
; T
; T
N-channel TrenchMOS SiliconMAX standard level FET
j
= 25 °C;
j
j
j
j
j
GS
j
= 25 °C;
= 175 °C;
= -55 °C;
= 175 °C;
= 25 °C;
j
j
j
GS
= 25 °C
j
j
= -55 °C
= 25 °C
= 25 °C
= 25 °C
= 175 °C
= 10 V;
= 10 V;
GS
= 0 V;
PSMN015-110P
Min
99
110
2
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
3
-
-
0.05
-
2
2
32.4
12
90
20
35
4900
390
220
25
65
95
50
0.8
80
115
© NXP B.V. 2009. All rights reserved.
Max
-
-
4
-
4.4
10
500
100
100
40.5
15
-
-
-
-
-
-
-
-
-
-
1.1
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
nC
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