PSMN015-110P NXP Semiconductors, PSMN015-110P Datasheet - Page 8

• Manufacturer Part Number: PSMN015-110P
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of PSMN015-110P

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0405 Ohms
• Drain-source Breakdown Voltage: 110 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: PSMN015-110P,127

NXP Semiconductors
PSMN015-110P_2
Product data sheet
Fig 9.
Fig 11. Gate-source voltage as a function of gate
R
(mΩ)
V
DSon
(V)
GS
30
20
10
10
0
8
6
4
2
0
of drain current; typical values
charge; typical values
Drain-source on-state resistance as a function
0
0
I
T
T
D
j
j
= 25 °C
= 75 A
= 25 °C
10
25
V
DD
20
= 20 V
V
50
GS
= 5 V
30
75
5.2 V
40
80 V
Q
G
I
D
03am59
03am55
(nC)
5.4 V
5.6 V
10 V
(A)
6 V
100
Rev. 02 — 6 October 2009
50
N-channel TrenchMOS SiliconMAX standard level FET
Fig 10. Normalized drain-source on-state resistance
Fig 12. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
a
4
3
2
3
2
1
0
10
-60
factor as a function of junction temperature
as a function of drain-source voltage; typical
values
−1
0
1
PSMN015-110P
60
10
120
© NXP B.V. 2009. All rights reserved.
V DS (V)
T
j
C
C
C
(°C)
03am58
03al21
rss
iss
oss
180
10
2
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