NTD3055-150 ON Semiconductor, NTD3055-150 Datasheet

NTD3055-150

Manufacturer Part Number

NTD3055-150

Description

MOSFET Power 60V 9A N-Channel

Manufacturer

ON Semiconductor

Datasheets

1.NTD3055-150.pdf (7 pages)

2.NTD3055-150.pdf (8 pages)

Specifications of NTD3055-150

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.122 Ohms

Forward Transconductance Gfs (max / Min)

5.4 S

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

9 A

Power Dissipation

28.8 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Package / Case

DPAK

Minimum Operating Temperature

- 55 C

Lead Free Status / Rohs Status

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Company

Part Number

Manufacturer

Quantity

Price

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Part Number:

NTD3055-150

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ON Semiconductor

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Part Number:

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Quantity:

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Manufacturer:

Quantity:

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Part Number:

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Current page: 1 of 7
Download datasheet (73Kb)

NTD3055−150

Power MOSFET 9.0 A, 60 V

N−Channel DPAK

power supplies, converters and power motor controls and bridge

circuits.

Features

•

Typical Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using 0.5 sq in pad size.

2. When surface mounted to an FR4 board using minimum recommended

MAXIMUM RATINGS

December, 2006 − Rev. 5

Drain−to−Source Voltage

Drain−to−Gate Voltage (R

Gate−to−Source Voltage

Drain Current

Total Power Dissipation @ T

Operating and Storage Temperature Range

Single Pulse Drain−to−Source Avalanche

Thermal Resistance

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

Designed for low voltage, high speed switching applications in

Pb−Free Packages are Available

Power Supplies

Converters

Power Motor Controls

Bridge Circuits

pad size.

Derate above 25°C

Energy − Starting T

L = 1.0 mH, I

= 25 Vdc, V

− Continuous

− Non−repetitive (t

− Continuous @ T

− Single Pulse (t

− Junction−to−Case

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

(pk) = 7.75 A, V

Rating

= 10 Vdc,

= 25°C

= 25°C unless otherwise noted)

v10 ms)

= 10 MW)

= 25°C (Note 1)

= 25°C (Note 2)

v10 ms)

= 25°C

= 100°C

= 25°C

= 60 Vdc)

Symbol

, T

DSS

DGR

qJC

qJA

stg

−55 to 175

Value

"20

"30

28.8

0.19

71.4

100

260

9.0

3.0

2.1

1.5

5.2

W/°C

°C/W

Unit

Vdc

Adc

Apk

°C

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

1 2

9.0 AMPERES, 60 VOLTS

ORDERING INFORMATION

DS(on)

3150

“SURFACE MOUNT”

“STRAIGHT LEAD”

http://onsemi.com

CASE 369C

CASE 369D

STYLE 2

DPAK−3

= 122 mW (Typ)

N−Channel

DPAK

= Device Code

= Year

= Work Week

= Pb−Free Package

Publication Order Number:

Gate

DIAGRAMS

NTD3055−150/D

MARKING

Drain

Source

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