STI21N65M5 STMicroelectronics, STI21N65M5 Datasheet

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STI21N65M5

Manufacturer Part Number
STI21N65M5
Description
MOSFET N-CH 650V 17A I2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STI21N65M5

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
179 mOhm @ 8.5A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
1950pF @ 100V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-11328-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STI21N65M5 21N65M5
Manufacturer:
ST
0
Features
1. Limited only by maximum temperature allowed
Application
Description
MDmesh V is a revolutionary Power MOSFET
technology, which combines an innovative
proprietary vertical process with the well known
company’s PowerMESH™ horizontal layout. The
resulting product has an extremely low on-
resistance, unmatched among silicon-based
Power MOSFETs, making it especially suited for
applications which require superior power density
and outstanding efficiencies.
Table 1.
November 2009
STW21N65M5
STB21N65M5
STP21N65M5
STF21N65M5
STI21N65M5
Worldwide best R
Higher V
High dv/dt capability
Excellent switching performance
100% avalanche tested
Switching applications
Type
STW21N65M5
STB21N65M5
STP21N65M5
STF21N65M5
Order codes
STI21N65M5
N-channel 650 V, 0.175 Ω , 17 A MDmesh™ V Power MOSFET
DSS
Device summary
V
rating
STI21N65M5, STP21N65M5, STW21N65M5
T
710 V
DSS
Jmax
@
DS(on)
< 0.190 Ω
R
max
* area
DS(on)
21N65M5
17 A
Marking
17 A
17 A
I
D
D
(1)
2
PAK, TO-220FP, TO-220, I
Doc ID 15427 Rev 3
125 W
125 W
125 W
125 W
30 W
P
W
STB21N65M5, STF21N65M5
Figure 1.
I²PAK
D²PAK
TO-220FP
Package
TO-220
TO-247
D²PAK
I²PAK
1
1 2
3
Internal schematic diagram
3
TO-247
2
1
PAK, TO-247
Tape and reel
2
Packaging
3
Tube
Tube
Tube
Tube
TO-220FP
TO-220
www.st.com
1
1
2
1/18
2
3
3
18

Related parts for STI21N65M5

STI21N65M5 Summary of contents

Page 1

... STI21N65M5, STP21N65M5, STW21N65M5 N-channel 650 V, 0.175 Ω MDmesh™ V Power MOSFET Features DSS DS(on) Type T max Jmax STB21N65M5 STF21N65M5 < 0.190 Ω STI21N65M5 710 V STP21N65M5 STW21N65M5 1. Limited only by maximum temperature allowed ■ Worldwide best R * area DS(on) ■ Higher V rating DSS ■ High dv/dt capability ■ ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STB/F/I/P/W21N65M5 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Gate-source voltage GS I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed Total dissipation at T TOT ...

Page 4

Electrical characteristics 2 Electrical characteristics ( °C unless otherwise specified) C Table 4. On /off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate ...

Page 5

STB/F/I/P/W21N65M5 Table 6. Switching times Symbol t (v) Voltage delay time d t (v) Voltage rise time r t (i) Current fall time f t (off) Crossing time c Table 7. Source drain diode Symbol I Source-drain current SD (1) ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, D²PAK, I²PAK Tj=150°C Tc=25°C Sinlge pulse 0.1 0 Figure 4. Safe operating area for TO-220FP ...

Page 7

STB/F/I/P/W21N65M5 Figure 8. Output characteristics I D (A) V =10V Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance V GS (V) V ...

Page 8

Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.10 1.00 0.90 0.80 0.70 -50 - Figure 16. Source-drain diode forward characteristics V SD (V) T =-50°C J 1.0 0.9 0.8 0.7 T ...

Page 9

STB/F/I/P/W21N65M5 3 Test circuits Figure 19. Switching times test circuit for resistive load D.U. Figure 21. Test circuit for inductive load switching and diode recovery times ...

Page 10

Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available ...

Page 11

STB/F/I/P/W21N65M5 Table 8. TO-220FP mechanical data Dim Dia Figure 25. TO-220FP drawing mechanical data Min. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 ...

Page 12

Package mechanical data Dim 12/18 I²PAK (TO-262) mechanical data mm Min Typ Max 4.40 4.60 2.40 2.72 0.61 0.88 1.14 1.70 0.49 0.70 1.23 1.32 8.95 9.35 ...

Page 13

STB/F/I/P/W21N65M5 Dim D²PAK (TO-263) mechanical data mm Min Typ Max 4.40 4.60 0.03 0.23 0.70 0.93 1.14 1.70 0.45 0.60 1.23 ...

Page 14

Package mechanical data 14/18 TO-220 type A mechanical data Dim Min A 4.40 b 0.61 b1 1.14 c 0.48 D 15. 2.40 e1 4.95 F 1.23 H1 6. 3.50 L20 L30 ...

Page 15

STB/F/I/P/W21N65M5 Dim øP øR S TO-247 Mechanical data mm. Min. Typ 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 Doc ID ...

Page 16

Packaging mechanical data 5 Packaging mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 B0 15.7 D 1.5 D1 1.59 E 1.65 F 11.4 K0 4.8 P0 3.9 P1 11 ...

Page 17

STB/F/I/P/W21N65M5 6 Revision history Table 9. Document revision history Date 24-Feb-2009 27-Feb-2009 11-Nov-2009 Revision 1 First release 2 Corrected package information on first page. 3 Document status promoted from preliminary data to datasheet. Doc ID 15427 Rev 3 Revision history ...

Page 18

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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