MT47H256M8THN-25E:H Micron Technology Inc, MT47H256M8THN-25E:H Datasheet

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MT47H256M8THN-25E:H

Manufacturer Part Number
MT47H256M8THN-25E:H
Description
IC SDRAM 2GBIT 800MHZ 63FBGA
Manufacturer
Micron Technology Inc
Series
-r
Datasheet

Specifications of MT47H256M8THN-25E:H

Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
2G (256M x 8)
Speed
2.5ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
63-TFBGA
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT47H256M8THN-25E:H
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT47H256M8THN-25E:H
Manufacturer:
MICRON/美光
Quantity:
20 000
TwinDie™ DDR2 SDRAM
MT47H512M4 – 32 Meg x 4 x 8 Banks x 2 Ranks
MT47H256M8 – 16 Meg x 8 x 8 Banks x 2 Ranks
For the latest component data sheet, refer to Micron’s Web site:
Functionality
The 2Gb (TwinDie™) DDR2 SDRAM uses Micron’s 1Gb
DDR2 monolithic die and, therefore, has similar func-
tionality. This TwinDie data sheet is intended to pro-
vide a general description, package dimensions, and
the ballout only. Refer to the Micron 1Gb DDR2 data
sheet for complete information regarding individual
die initialization, register definition, command
descriptions, and die operation.
Features
• Uses 1Gb Micron die
• Two ranks (includes dual CS#, ODT, and CKE balls)
• Each rank has 8 internal banks for concurrent
• V
• JEDEC-standard 63-ball ballout
• Low-profile package size (1.2mm MAX thickness)
Table 1:
Table 2:
PDF: 09005aef83fa94e3/Source: 09005aef8266ac6e
2Gb_twindie_H.fm - Rev. B 7/10 EN
Parameter
Refresh count
Row address
Bank address
Configuration
Column address
Rank address
operation
Speed
Grade
DD
-25E
-3
= V
DDQ
Key Timing Parameters
Addressing
Products and specifications discussed herein are subject to change by Micron without notice.
= +1.8V ±0.1V
CL = 6
CL = 5
Data Rate (MT/s)
800
667
CL = 4
533
533
16 Meg x 8 x 8 x 2
256 Meg x 8
16K A[13:0]
2 CS#[1:0]
1K A[9:0]
8 BA[2:0]
CL = 3
400
8K
1
Notes: 1. CL = CAS (READ) latency
www.micron.com
Options
• Configuration
• FBGA package (lead-free)
• Timing – cycle time
• Self refresh
• Operating temperature
• Revision
– 32 Meg x 4 x 8 banks x 2 ranks
– 16 Meg x 8 x 8 banks x 2 ranks
– 63-ball FBGA (8mm x 10mm)
– 2.5ns @ CL = 5 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
– Standard
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
–40°C ≤ T
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
(ns)
12.5
RCD
15
2Gb: x4, x8 TwinDie DDR2 SDRAM
A
≤ 85°C)
(ns)
12.5
t
1
15
RP
C
C
≤ 95°C;
≤ 85°C)
32 Meg x 4 x 8 x 2
©2010 Micron Technology, Inc. All rights reserved.
2K A[9:0], A11
512 Meg x 4
16K A[13:0]
2 CS#[1:0]
8 BA[2:0]
(ns)
t
8K
55
55
RC
Functionality
Marking
512M4
256M8
None
None
THN
-25E
127.5
127.5
:H
-3
IT
t
(ns)
RFC

Related parts for MT47H256M8THN-25E:H

MT47H256M8THN-25E:H Summary of contents

Page 1

TwinDie™ DDR2 SDRAM MT47H512M4 – 32 Meg Banks x 2 Ranks MT47H256M8 – 16 Meg Banks x 2 Ranks For the latest component data sheet, refer to Micron’s Web site: Functionality The ...

Page 2

Ball Assignments and Descriptions Figure 1: 63-Ball FBGA Assignments – x4, x8 (Top View NF, NU/RDQS NF, DQ6 DQ1 DDQ D NF, DQ4 DDL F CKE0 G BA2 ...

Page 3

... Input Address inputs: Provide the row address for ACTIVE commands, and the column address and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory array in the respective bank. A10 sampled during a precharge command determines whether the PRECHARGE applies to one device bank (A10 LOW, device bank selected by BA[2:0]) or all device banks (A10 HIGH) ...

Page 4

... Functional Description The 2Gb (TwinDie) DDR2 SDRAM is a high-speed, CMOS dynamic random access memory device that contains 2,147,483,648 bits and is internally configured as two 8-bank 1Gb DDR2 SDRAM devices. Although each die is tested individually within the dual-die package, some TwinDie test results may vary from a like die tested within a monolithic die package. ...

Page 5

Functional Block Diagrams Figure 2: Functional Block Diagram (32 Meg Banks x 2 Ranks) CS1# RAS# CKE1 CAS# ODT1 WE# Figure 3: Functional Block Diagram (16 Meg Banks x 2 Ranks) CS1# ...

Page 6

Electrical Specifications Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and functional operation of the devices at these or any other condi- tions outside those indicated in the device data ...

Page 7

Table 5: Temperature Limits Symbol Parameter T Storage temperature STG T Operating temperature – commercial C Notes: 1. Maximum storage case temperature; T shown in Figure 4. This case temperature limit is allowed to be exceeded briefly during package reflow, ...

Page 8

I Specifications and Conditions CDD Table 7: DDR2 I Specifications and Conditions CDD Notes: 1–8 apply to the entire document; notes appear on page 9 Parameter/Condition Operating one bank active-precharge current ...

Page 9

Table 7: DDR2 I Specifications and Conditions (continued) CDD Notes: 1–8 apply to the entire document; notes appear on page 9 Parameter/Condition Self refresh current: CK and CK# at 0V; CKE ≤ 0.2V; Other control and address bus inputs are ...

Page 10

Package Dimensions Figure 5: 63-Ball FBGA Package Dimensions (Part Rev. H) Seating plane A 0.12 A 63X Ø0.45 Solder ball material: SAC305 (96.5% Sn, 3% Ag, 0.5% Cu). Dimensions apply to solder balls post reflow on Ø0.33 ...

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