MT9HTF12872PZ-80EH1 Micron Technology Inc, MT9HTF12872PZ-80EH1 Datasheet

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MT9HTF12872PZ-80EH1

Manufacturer Part Number
MT9HTF12872PZ-80EH1
Description
MODULE DDR2 SDRAM 1GB 240RDIMM
Manufacturer
Micron Technology Inc
Series
-r

Specifications of MT9HTF12872PZ-80EH1

Memory Type
DDR2 SDRAM
Memory Size
1GB
Speed
800MT/s
Features
-
Package / Case
240-RDIMM
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT9HTF12872PZ-80EH1
Manufacturer:
AVAGO
Quantity:
3 323
DDR2 SDRAM RDIMM
MT9HTF6472PZ – 512MB
MT9HTF12872PZ – 1GB
MT9HTF25672PZ – 2GB
Features
• 240-pin, registered dual in-line memory module
• Fast data transfer rates: PC2-3200, PC2-4200,
• 512MB (64 Meg x 72), 1GB (128 Meg x 72), 2GB (256
• Supports ECC error detection and correction
• V
• V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent
• Programmable CAS# latency (CL)
• Posted CAS# additive latency (AL)
• WRITE latency = READ latency - 1
• Programmable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Serial presence-detect (SPD) with EEPROM
• Single rank
• Gold edge contacts
• Halogen-free
Table 1: Key Timing Parameters
PDF: 09005aef83c641c6
htf9c64_128_256x72pz.pdf - Rev. D 11/10 EN
PC2-5300, or PC2-6400
Meg x 72)
operation
Speed
Grade
DD
DDSPD
-80E
-800
-667
-53E
-40E
= V
DDQ
= 1.7–3.6V
= 1.8V
Products and specifications discussed herein are subject to change by Micron without notice.
Nomenclature
Industry
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
512MB, 1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMM
t
CK
CL = 6
800
800
CL = 5
Data Rate (MT/s)
800
667
667
1
Figure 1: 240-Pin RDIMM (MO-237 R/C F)
CL = 4
Options
• Parity
• Operating temperature
• Package
• Frequency/CL
Module height: 30mm (1.181in)
533
533
553
553
400
Notes:
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 240-pin DIMM (halogen-free)
– 2.5ns @ CL = 5 (DDR2-800)
– 2.5ns @ CL = 6 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1. Contact Micron for industrial temperature
2. CL = CAS (READ) latency; registered mode
CL = 3
400
400
400
400
400
module offerings.
will add one clock cycle to CL.
2
t
(ns)
12.5
RCD
15
15
15
15
A
A
≤ +85°C)
≤ +70°C)
© 2009 Micron Technology, Inc. All rights reserved.
1
(ns)
12.5
t
15
15
15
15
RP
Marking
Features
None
-80E
-800
-667
P
Z
I
(ns)
t
55
55
55
55
55
RC

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