MT9VDDT6472PHY-335J1 Micron Technology Inc, MT9VDDT6472PHY-335J1 Datasheet

MT9VDDT6472PHY-335J1

Manufacturer Part Number

MT9VDDT6472PHY-335J1

Description

MODULE DDR SDRAM 512MB 200SODIMM

Manufacturer

Micron Technology Inc

Series

-r

Datasheet

1.MT9VDDT6472PHY-335J1.pdf (15 pages)

Specifications of MT9VDDT6472PHY-335J1

Memory Type

DDR SDRAM

Memory Size

512MB

Speed

333MT/s

Features

Package / Case

200-SODIMM

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Current page: 1 of 15
Download datasheet (608Kb)

DDR SDRAM SODIMM

MT9VDDT1672H – 128MB

MT9VDDT3272H – 256MB

MT9VDDT6472H – 512MB

For component data sheets, refer to Micron’s Web site:

Features

• 200-pin, small-outline dual in-line memory module

• Fast data transfer rates: PC2100, PC2700, or PC3200

• 128MB (16 Meg x 72), 256MB (32 Meg x 72), and

• Supports ECC error detection and correction

• V

• 2.5V I/O (SSTL_2-compatible)

• Internal, pipelined double data rate (DDR)

• Bidirectional data strobe (DQS) transmitted/

• Differential clock inputs (CK and CK#)

• Multiple internal device banks for concurrent

• Selectable burst lengths (BL) 2, 4, or 8

• Auto precharge option

• Auto refresh and self refresh modes: 15.625µs

• Serial presence-detect (SPD) with EEPROM

• Selectable CAS latency (CL) for maximum

• Single rank

• Gold edge contacts

200-Pin SODIMM (MO-224) Figures

Figure 1:

PDF: 09005aef80804052/Source: 09005aef806e057b

DD9C16_32_64x72H.fm - Rev. E 1/08 EN

PCB height: 31.75mm (1.25in)

(SODIMM)

512MB (64 Meg x 72)

architecture; two data accesses per clock cycle

received with data—that is, source-synchronous

data capture

operation

(128MB) and 7.8125µs (256MB, 512MB) maximum

average periodic refresh interval

compatibility

DDSPD

= V

= +2.3V to +3.6V

Q = +2.5V (-40B: V

Low-Profile Layout

Products and specifications discussed herein are subject to change by Micron without notice.

128MB, 256MB, 512MB (x72, ECC, SR) 200-Pin DDR SDRAM SODIMM

= V

Q = +2.6V)

www.micron.com

Figure 2:

PCB height: 38.10mm (1.5in)

Notes: 1. End of life.

Options

• Operating temperature

• Package

• Memory clock, speed, CAS latency

– Commercial (0°C ≤ T

– Industrial (–40°C ≤ T

– 200-pin DIMM (standard)

– 200-pin DIMM (Pb-free)

– 5.0ns (200 MHz), 400 MT/s, CL = 3.0

– 6.0ns (167 MHz), 333 MT/s, CL = 2.5

– 7.5ns (133 MHz), 266 MT/s, CL = 2.0

– 7.5ns (133 MHz), 266 MT/s, CL = 2.5

Micron Technology, Inc., reserves the right to change products or specifications without notice.

2. Contact Micron for industrial temperature

3. Not recommended for new designs.

module offerings.

Standard Layout

≤ +85°C)

≤ +70°C)

Marking

Features

None

-40B

-26A

-335

-262

-265

Related parts for MT9VDDT6472PHY-335J1

Related keywords

MT9VDDT6472PHY-335J1 datasheet
MT9VDDT6472PHY-335J1 data sheet
MT9VDDT6472PHY-335J1 pdf datasheet
MT9VDDT6472PHY-335J1 component
MT9VDDT6472PHY-335J1 part
MT9VDDT6472PHY-335J1 distributor
MT9VDDT6472PHY-335J1 RoHS
MT9VDDT6472PHY-335J1 datasheet download