MT16HTF25664AZ-800H1 Micron Technology Inc, MT16HTF25664AZ-800H1 Datasheet
MT16HTF25664AZ-800H1
Specifications of MT16HTF25664AZ-800H1
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MT16HTF25664AZ-800H1 Summary of contents
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DDR2 SDRAM SODIMM MT16HTF12864HZ – 1GB MT16HTF25664HZ – 2GB MT16HTF51264HZ – 4GB Features • 200-pin, small-outline dual in-line memory module (SODIMM) • Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, or PC2-6400 • 1GB (128 Meg x 64), 2GB (256 Meg ...
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... Table 4: Part Numbers and Timing Parameters – 2GB Modules 1 Base device: MT47H128M8, 1Gb DDR2 SDRAM Module 2 Part Number Density MT16HTF25664H(I)Z-1GA__ MT16HTF25664H(I)Z-80E__ MT16HTF25664H(I)Z-800__ MT16HTF25664H(I)Z-667__ Table 5: Part Numbers and Timing Parameters – 2GB Modules 1 Base device: MT47H256M8, 2Gb DDR2 SDRAM Module 2 Part Number Density MT16HTF51264H(I)Z-1GA__ MT16HTF51264H(I)Z-80E__ MT16HTF51264H(I)Z-800__ MT16HTF51264H(I)Z-667__ 1. The data sheet for the base device can be found on Micron’ ...
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Pin Assignments Table 6: Pin Assignments 200-Pin DDR2 SODIMM Front Pin Symbol Pin Symbol Pin DQS2 101 REF 103 DQ0 55 DQ18 105 7 DQ1 57 DQ19 107 9 V ...
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... Pin Descriptions The pin description table below is a comprehensive list of all possible pins for all DDR2 modules. All pins listed may not be supported on this module. See Pin Assignments for information specific to this module. Table 7: Pin Descriptions Symbol Type Ax Input BAx Input ...
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Table 7: Pin Descriptions (Continued) Symbol Type SDA I/O RDQSx, Output RDQS#x Err_Out# Output (open drain Supply DD DDQ V Supply DDSPD V Supply REF V Supply SS – NC – NF – NU – RFU PDF: 09005aef8339ef97 ...
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Functional Block Diagram – 1GB, 2GB Figure 2: Functional Block Diagram – 1GB, 2GB S1# S0# DQS0# DQS0 DM0 DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQ4 DQ DQ5 DQ DQ6 DQ DQ7 DQ DQS1# DQS1 DM1 DQ8 DQ ...
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Functional Block Diagram – 4GB Figure 3: Functional Block Diagram – 4GB S1# S0# DQS0# DQS0 DM0 DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQ4 DQ DQ5 DQ DQ6 DQ DQ7 DQ DQS1# DQS1 DM1 DQ8 DQ DQ9 DQ ...
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... DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data trans- fers at the I/O pins. DDR2 modules use two sets of differential signals: DQS, DQS# to capture data and CK and CK# to capture commands, addresses, and control signals. Differential clocks and data strobes ensure exceptional noise immunity for these signals and provide precise crossing points to capture input signals ...
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Electrical Specifications Stresses greater than those listed may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other condi- tions outside those indicated in the device data ...
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... Design Considerations Simulations Micron memory modules are designed to optimize signal integrity through carefully de- signed terminations, controlled board impedances, routing topologies, trace length matching, and decoupling. However, good signal integrity starts at the system level. Mi- cron encourages designers to simulate the signal characteristics of the system's memo- ry bus to ensure adequate signal integrity of the entire memory system ...
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IDD Specifications Table 10: DDR2 I Specifications and Conditions – 1GB DD Values shown for MT47H64M8 DDR2 SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter Operating one bank active-precharge ...
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Table 10: DDR2 I Specifications and Conditions – 1GB (Continued) DD Values shown for MT47H64M8 DDR2 SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter Operating bank interleave read current: ...
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Table 11: DDR2 I Specifications and Conditions – 2GB (Die Revision E and G) (Continued) DD Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com- ponent data sheet ...
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Table 12: DDR2 I Specifications and Conditions – 2GB (Die Revision H) (Continued) DD Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com- ponent data sheet Parameter Active ...
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Table 13: DDR2 I Specifications and Conditions – 4GB (Die Revision A) (Continued) DD Values shown for MT47H256M8 DDR2 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) com- ponent data sheet Parameter Precharge ...
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Serial Presence-Detect For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD. Table 14: SPD EEPROM Operating Conditions Parameter/Condition Supply voltage Input high voltage: logic 1; All inputs Input low voltage: logic 0; All inputs Output low voltage: I ...
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Module Dimensions – 1GB, 2GB Figure 4: 200-Pin DDR2 SODIMM – 1GB, 2GB 2.0 (0.079 (2X) 1.80 (0.071) (2X) U6 6.0 (0.236) TYP Pin 1 2.0 (0.079) TYP 16.25 (0.64) TYP U10 U15 3.5 (0.138) TYP Pin 200 ...
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Module Dimensions – 4GB Figure 5: 200-Pin DDR2 SODIMM – 4GB 2.0 (0.079 (2X) 1.80 (0.071) (2X) U7 6.0 (0.236) TYP PIN 1 2.0 (0.079) TYP 16.25 (0.64) TYP 45° 4X U11 U15 3.5 (0.138) TYP PIN 200 ...