MT18HTF25672PKZ-80EH1 Micron Technology Inc, MT18HTF25672PKZ-80EH1 Datasheet

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MT18HTF25672PKZ-80EH1

Manufacturer Part Number
MT18HTF25672PKZ-80EH1
Description
MODULE DDR2 SDRAM 2GB 244MRDIMM
Manufacturer
Micron Technology Inc
Series
-r
Datasheet

Specifications of MT18HTF25672PKZ-80EH1

Memory Type
DDR2 SDRAM
Memory Size
2GB
Speed
800MT/s
Features
-
Package / Case
244-MiniRDIMM
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
DDR2 SDRAM Mini-RDIMM
MT18HTF25672PKZ – 2GB
For component data sheets, refer to Micron’s Web site:
Features
• 244-pin, mini registered dual in-line memory
• Fast data transfer rates: PC2-3200, PC2-4200, PC2-
• Supports ECC error detection and correction
• V
• V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4-bit prefetch architecture
• DLL to align DQ and DQS transitions with CK
• Dual rank
• Multiple internal device banks for concurrent
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1
• Programmable burst lengths: 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
• Halogen-free
Table 1:
PDF: 09005aef83d235f2/Source: 09005aef83d23625
htf18c256x72pkz.fm - Rev. A 11/09 EN
Speed
Grade
module (Mini-RDIMM)
5300, or PC2-6400
operation
-80E
-800
-667
-53E
-40E
DD
DDSPD
= V
DDQ
= +1.7V to +3.6V
Key Timing Parameters
Products and specifications discussed herein are subject to change by Micron without notice.
= +1.8V
Nomenclature
Industry
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
CL = 6
t
CK
800
800
Data Rate (MT/s)
CL = 5
800
667
667
www.micron.com
1
CL = 4
533
400
533
533
533
Figure 1:
Notes: 1. Industrial temperature rating applies to
Options
• Operating temperature
• Parity
• Package
• Frequency/CAS latency
2GB (x72, DR) 244-Pin DDR2 Mini-RDIMM
Module Height: 30mm (1.18 in.)
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 244-pin Mini-RDIMM
– 2.5ns at CL = 5 (DDR2-800)
– 2.5ns at CL = 6 (DDR2-800)
– 3.0ns at CL = 5 (DDR2-667)
(halogen-free)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. Contact Micron for product availability.
3. CL = CAS (READ) latency; registered mode
CL = 3
DRAM only.
will add one clock cycle to CL.
400
400
400
400
400
244-Pin Mini-RDIMM (MO-244)
t
(ns)
12.5
RCD
15
15
15
15
A
A
≤ +85°C)
≤ +70°C)
3
©2009 Micron Technology, Inc. All rights reserved.
1,2
(ns)
12.5
t
15
15
15
15
RP
Marking
Features
-80E
-800
-667
(ns)
P
Z
t
I
55
55
55
55
55
RC

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MT18HTF25672PKZ-80EH1 Summary of contents

Page 1

... DDR2 SDRAM Mini-RDIMM MT18HTF25672PKZ – 2GB For component data sheets, refer to Micron’s Web site: Features • 244-pin, mini registered dual in-line memory module (Mini-RDIMM) • Fast data transfer rates: PC2-3200, PC2-4200, PC2- 5300, or PC2-6400 • Supports ECC error detection and correction • ...

Page 2

... Notes: 1. The data sheets for the base devices can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown), designating component and PCB revisions. Consult factory for current revision codes. Example: MT18HTF25672PKZ-667G1. PDF: 09005aef83d235f2/Source: 09005aef83d23625 htf18c256x72pkz.fm - Rev. A 11/09 EN ...

Page 3

Pin Assignments and Descriptions Table 4: Pin Assignments 244-Pin Mini-RDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol REF DQ24 DQ0 34 DQ25 65 4 DQ1 35 ...

Page 4

Table 5: Pin Descriptions Symbol Type Description A[15:0] Input Address inputs: Provide the row address for ACTIVE commands, and the column address (SSTL_18) and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory array ...

Page 5

Table 5: Pin Descriptions (continued) Symbol Type Description NF – No function: These pins are connected within the module but provide no functionality. PDF: 09005aef83d235f2/Source: 09005aef83d23625 htf18c256x72pkz.fm - Rev. A 11/09 EN 2GB (x72, DR) 244-Pin DDR2 Mini-RDIMM Pin Assignments ...

Page 6

Functional Block Diagram Figure 2: Functional Block Diagram RS1# RS0# DQS0 DQS0# DM0/RDQS0 NF/RDQS0# DM/ RDQS DQ DQ0 DQ DQ1 DQ2 DQ DQ DQ3 DQ DQ4 DQ DQ5 DQ DQ6 DQ7 DQ DQS1 DQS1# DM1/RDQS1 NF/RDQS1# DM/ RDQS DQ8 DQ ...

Page 7

... READs and by the memory controller during WRITEs. DQS is edge- aligned with data for READs and center-aligned with data for WRITEs. These DDR2 SDRAM modules operate from a differential clock (CK and CK#); the cross- ing of CK going HIGH and CK# going LOW will be referred to as the positive edge of CK. ...

Page 8

Electrical Specifications Stresses greater than those listed in Table 6 may cause permanent damage to the DRAM devices on the module. This is a stress rating only, and functional operation of the device at these or any other conditions above ...

Page 9

... Design Considerations Simulations Micron memory modules are designed to optimize signal integrity through carefully designed terminations, controlled board impedances, routing topologies, trace length matching, and decoupling. However, good signal integrity starts at the system level. Micron encourages designers to simulate the signal characteristics of the system’s mem- ory bus to ensure adequate signal integrity of the entire memory system ...

Page 10

I Specifications DD Table 8: DDR2 I Specifications and Conditions – 2GB DD Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) component data sheet Parameter/Condition Operating one bank ...

Page 11

Register and PLL Specifications Table 9: Register Specifications SSTU32866 devices or equivalent Parameter Symbol V DC high-level IH(DC) input voltage DC low-level V IL(DC) input voltage AC high-level V IH(AC) input voltage V AC low-level IL(AC) input voltage Output high ...

Page 12

Table 10: PLL Specifications CU877 device or equivalent JESD82-8.01 Parameter Symbol DC high-level input V IH voltage DC low-level input V IL voltage V Input voltage (limits high-level input V IH voltage V DC low-level input IL voltage ...

Page 13

Table 12: PLL Specifications CU877 device or equivalent JESD82-8.01 Parameter Symbol DC high-level input V IH voltage DC low-level input V IL voltage V Input voltage (limits high-level input V IH voltage V DC low-level input IL voltage ...

Page 14

Serial Presence-Detect Table 14: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input leakage current GND ...

Page 15

Module Dimensions Figure 3: 244-Pin DDR2 Mini-RDIMM 2.0 (0.079 1.0 (0.039 1.8 (0.071 6.0 (0.236) TYP 1.0 (0.039) 0.6 (0.024) TYP PIN 1 TYP 2.0 (0.079) TYP 42.9 (1.69) 45° 4X U13 ...

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