MT18JSF51272AZ-1G1D1 Micron Technology Inc, MT18JSF51272AZ-1G1D1 Datasheet

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MT18JSF51272AZ-1G1D1

Manufacturer Part Number
MT18JSF51272AZ-1G1D1
Description
MODULE DDR3 SDRAM 4GB 240UDIMM
Manufacturer
Micron Technology Inc
Series
-r
Datasheet

Specifications of MT18JSF51272AZ-1G1D1

Memory Type
DDR3 SDRAM
Memory Size
4GB
Speed
1066MT/s
Features
-
Package / Case
240-UDIMM
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
DDR3 SDRAM UDIMM
MT18JSF25672AZ – 2GB
MT18JSF51272AZ – 4GB
Features
• DDR3 functionality and operations supported as
• 240-pin, unbuffered dual in-line memory module
• Fast data transfer rates: PC3-12800, PC3-10600,
• 2GB (256 Meg x 72), 4GB (512 Meg x 72)
• V
• V
• Supports ECC error detection and correction
• Nominal and dynamic on-die termination (ODT) for
• Dual rank
• On-board I
• 8 internal device banks
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
• Selectable BC4 or BL8 on-the-fly (OTF)
• Gold edge contacts
• Halogen-free
• Fly-by topology
• Terminated control, command, and address bus
Table 1: Key Timing Parameters
PDF: 09005aef83606b46
jsf18c256_512x72az.pdf – Rev. C 3/11 EN
Speed
Grade
defined in the component data sheet
(UDIMM)
PC3-8500, or PC3-6400
data, strobe, and mask signals
serial presence-detect (SPD) EEPROM
via the mode register set (MRS)
-1G6
-1G4
-1G1
-1G0
-80B
DD
DDSPD
= 1.5V ±0.075V
= 3.0–3.6V
Nomenclature
PC3-12800
PC3-10600
2
Industry
PC3-8500
PC3-8500
PC3-6400
C temperature sensor with integrated
Products and specifications discussed herein are subject to change by Micron without notice.
CL = 11 CL = 10
1600
1333
1333
CL = 9
1333
1333
Data Rate (MT/s)
2GB, 4GB (x72, ECC, DR) 240-Pin DDR3 UDIMM
CL = 8
1066
1066
1066
1066
1
Figure 1: 240-Pin UDIMM (MO-269 R/C E)
Options
• Operating temperature
• Package
• Frequency/CAS latency
Module height: 30mm (1.18in)
Notes:
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 240-pin DIMM (halogen-free)
– 1.25ns @ CL = 11 (DDR3-1600)
– 1.5ns @ CL = 9 (DDR3-1333)
– 1.87ns @ CL = 7 (DDR3-1066)
– 1.87ns @ CL = 8 (DDR3-1066)
– 2.5ns @ CL = 5 (DDR3-800)
– 2.5ns @ CL = 6 (DDR3-800)
CL = 7
1066
1066
1066
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1. Contact Micron for industrial temperature
2. Not recommended for new designs.
CL = 6
module offerings.
800
800
800
800
800
CL = 5
667
667
667
667
667
1
A
A
≤ +85°C)
≤ +70°C)
© 2009 Micron Technology, Inc. All rights reserved.
13.125
13.125
13.125
t
(ns)
RCD
15
15
2
2
2
13.125
13.125
13.125
Marking
(ns)
t
15
15
RP
Features
None
-1G6
-1G4
-1G1
-1G0
-80C
-80B
Z
I
48.125
49.125
50.625
(ns)
52.5
52.5
t
RC

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MT18JSF51272AZ-1G1D1 Summary of contents

Page 1

... DDR3 SDRAM UDIMM MT18JSF25672AZ – 2GB MT18JSF51272AZ – 4GB Features • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, unbuffered dual in-line memory module (UDIMM) • Fast data transfer rates: PC3-12800, PC3-10600, PC3-8500, or PC3-6400 • 2GB (256 Meg x 72), 4GB (512 Meg x 72) • ...

Page 2

... Table 3: Part Numbers and Timing Parameters – 2GB Modules 1 Base device: MT41J128M8, 1Gb DDR3 SDRAM 2 Part Number MT18JSF25672A(I)Z-1G6__ MT18JSF25672A(I)Z-1G4__ MT18JSF25672A(I)Z-1G1__ MT18JSF25672A(I)Z-1G0__ MT18JSF25672A(I)Z-80C__ MT18JSF25672A(I)Z-80B__ Table 4: Part Numbers and Timing Parameters – 4GB Modules 1 Base device: MT41J256M8, 2Gb DDR3 SDRAM 2 Part Number MT18JSF51272A(I)Z-1G6__ MT18JSF51272A(I)Z-1G4__ MT18JSF51272A(I)Z-1G1__ MT18JSF51272A(I)Z-1G0__ MT18JSF51272A(I)Z-80C__ MT18JSF51272A(I)Z-80B__ Notes: 1. The data sheet for the base device can be found on Micron’ ...

Page 3

Pin Assignments Table 5: Pin Assignments 240-Pin DDR3 UDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin DQ25 61 REFDQ DQ0 33 DQS3 DQ1 34 DQS3 64 ...

Page 4

... Pin Descriptions The pin description table below is a comprehensive list of all possible pins for all DDR3 modules. All pins listed may not be supported on this module. See Pin Assignments for information specific to this module. Table 6: Pin Descriptions Symbol Type Ax Input BAx Input ...

Page 5

Table 6: Pin Descriptions (Continued) Symbol Type SDA I/O TDQSx, Output TDQSx# Err_Out# Output (open drain) EVENT# Output (open drain) V Supply DD V Supply DDSPD V Supply REFCA V Supply REFDQ V Supply SS V Supply TT – NC ...

Page 6

DQ Map Table 7: Component-to-Module DQ Map Component Reference Component Number DQ Module ...

Page 7

Table 7: Component-to-Module DQ Map (Continued) Component Reference Component Number DQ Module DQ U12 U14 U16 ...

Page 8

Functional Block Diagram Figure 2: Functional Block Diagram S1# S0# DQS0 DQS0# DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 V DQS1 DQS1# DM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 V DQS2 DQS2# DM2 DQ16 DQ17 DQ18 ...

Page 9

... DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data trans- fers at the I/O pins. DDR3 modules use two sets of differential signals: DQS, DQS# to capture data and CK and CK# to capture commands, addresses, and control signals. Differential clocks and data strobes ensure exceptional noise immunity for these signals and provide precise crossing points to capture input signals ...

Page 10

Electrical Specifications Stresses greater than those listed may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other condi- tions outside those indicated in each device's data ...

Page 11

... Design Considerations Simulations Micron memory modules are designed to optimize signal integrity through carefully de- signed terminations, controlled board impedances, routing topologies, trace length matching, and decoupling. However, good signal integrity starts at the system level. Micron encourages designers to simulate the signal characteristics of the system's mem- ory bus to ensure adequate signal integrity of the entire memory system ...

Page 12

I Specifications DD Table 11: DDR3 I Specifications and Conditions – 2GB DD Values are for the MT41J128M8 DDR3 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) component data sheet Parameter Operating current ...

Page 13

Table 12: DDR3 I Specifications and Conditions – 4GB DD Values are for the MT41J256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) component data sheet Parameter Operating current 0: One bank ...

Page 14

Temperature Sensor with Serial Presence-Detect EEPROM The temperature sensor continuously monitors the module's temperature and can be read back at any time over the I Serial Presence-Detect For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD. Table 13: ...

Page 15

EVENT# Pin The temperature sensor also adds the EVENT# pin (open-drain). Not used by the SPD EEPROM, EVENT temperature sensor output used to flag critical events that can be set up in the sensor’s configuration register. EVENT# has ...

Page 16

Module Dimensions Figure 3: 240-Pin DDR3 UDIMM 0.9 (0.035) TYP 0.50 (0.02) R (4X 0.75 (0.03) R (8X) 2.50 (0.098) D (2X) 2.30 (0.091) TYP Pin 1 2.20 (0.087) TYP 1.45 (0.057) TYP 54.68 (2.15) TYP 15.0 (0.59) ...

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