MT36HTF1G72PZ-80EC1 Micron Technology Inc, MT36HTF1G72PZ-80EC1 Datasheet

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MT36HTF1G72PZ-80EC1

Manufacturer Part Number
MT36HTF1G72PZ-80EC1
Description
MODULE DDR2 SDRAM 8GB 240RDIMM
Manufacturer
Micron Technology Inc
Series
-r
Datasheet

Specifications of MT36HTF1G72PZ-80EC1

Memory Type
DDR2 SDRAM
Memory Size
8GB
Speed
800MT/s
Features
-
Package / Case
240-RDIMM
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
DDR2 SDRAM RDIMM
MT36HTF25672PZ – 2GB
MT36HTF51272PZ – 4GB
MT36HTF1G72PZ – 8GB
Features
• 240-pin, registered dual in-line memory module
• Fast data transfer rates: PC2-3200, PC2-4200,
• 2GB (256 Meg x 72), 4GB (512 Meg x 72), 8GB (1 Gig
• Supports ECC error detection and correction
• V
• V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Dual rank
• Multiple internal device banks for concurrent
• Programmable CAS# latency (CL)
• Posted CAS# additive latency (AL)
• WRITE latency = READ latency - 1
• Programmable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
• Halogen-free
Table 1: Key Timing Parameters
PDF: 09005aef83d65c27
htf36c256_512_1gx72pz.pdf - Rev. D 10/10 EN
PC2-5300, or PC2-6400
x 72)
operation
Speed
Grade
DD
DDSPD
-80E
-800
-667
-53E
-40E
= V
DDQ
= 1.7–3.6V
= +1.8V
Products and specifications discussed herein are subject to change by Micron without notice.
Nomenclature
Industry
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
2Gb, 4GB, 8GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM
t
CK
CL = 6
800
800
CL = 5
Data Rate (MT/s)
800
667
667
1
Figure 1: 240-Pin RDIMM (MO-256 R/C L)
CL = 4
Module height: 30.0mm (1.181in)
Options
• Parity
• Operating temperature
• Package
• Frequency/CL
533
533
553
553
400
Notes:
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 240-pin DIMM (halogen-free)
– 2.5ns @ CL = 5 (DDR2-800)
– 2.5ns @ CL = 6 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1. Contact Micron for industrial temperature
2. CL = CAS (READ) latency; registered mode
CL = 3
400
400
400
400
400
module offerings.
will add one clock cycle to CL.
2
t
(ns)
12.5
RCD
15
15
15
15
C
C
≤ +85°C)
≤ +70°C)
© 2009 Micron Technology, Inc. All rights reserved.
1
(ns)
12.5
t
15
15
15
15
RP
Marking
Features
None
-80E
-800
-667
P
Z
I
(ns)
t
55
55
55
55
55
RC

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MT36HTF1G72PZ-80EC1 Summary of contents

Page 1

... DDR2 SDRAM RDIMM MT36HTF25672PZ – 2GB MT36HTF51272PZ – 4GB MT36HTF1G72PZ – 8GB Features • 240-pin, registered dual in-line memory module • Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, or PC2-6400 • 2GB (256 Meg x 72), 4GB (512 Meg x 72), 8GB (1 Gig x 72) • ...

Page 2

Table 2: Addressing Parameter Refresh count Row address Device bank address Device configuration Column address Module rank address Table 3: Part Numbers and Timing Parameters – 2GB 1 Base device: MT47H128M4, 512Mb DDR2 SDRAM Module 2 Part Number Density MT36HTF25672P(I)Z-80E__ ...

Page 3

Pin Assignments Table 6: Pin Assignments 240-Pin RDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQ19 61 REF DQ0 ...

Page 4

... Pin Descriptions The pin description table below is a comprehensive list of all possible pins for all DDR2 modules. All pins listed may not be supported on this module. See Pin Assignments for information specific to this module. Table 7: Pin Descriptions Symbol Type Ax Input BAx Input ...

Page 5

Table 7: Pin Descriptions (Continued) Symbol Type SDA I/O RDQSx, Output RDQS#x Err_Out# Output (open drain Supply DD DDQ V Supply DDSPD V Supply REF V Supply SS – NC – NF – NU – RFU PDF: 09005aef83d65c27 ...

Page 6

Functional Block Diagram Figure 2: Functional Block Diagram V SS RS0# RS1# DQS0 DQS0# DM CS# DQS DQS# DM CS# DQS DQS# DQ DQ0 DQ U40 U12 DQ DQ1 DQ DQ DQ2 DQ DQ DQ3 DQ DQS1 DQS1# DM CS# ...

Page 7

... DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data trans- fers at the I/O pins. DDR2 modules use two sets of differential signals: DQS, DQS# to capture data and CK and CK# to capture commands, addresses, and control signals. Differential clocks and data strobes ensure exceptional noise immunity for these signals and provide precise crossing points to capture input signals ...

Page 8

Electrical Specifications Stresses greater than those listed may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other condi- tions outside those indicated in each device's data ...

Page 9

... Design Considerations Simulations Micron memory modules are designed to optimize signal integrity through carefully de- signed terminations, controlled board impedances, routing topologies, trace length matching, and decoupling. However, good signal integrity starts at the system level. Mi- cron encourages designers to simulate the signal characteristics of the system's memo- ry bus to ensure adequate signal integrity of the entire memory system ...

Page 10

I Specifications DD Table 10: DDR2 I Specifications and Conditions – 2GB (Die Revision F) DD Values shown for MT47H128M4 DDR2 SDRAM only and are computed from values specified in the 512Mb (128 Meg x 4) component data sheet Parameter ...

Page 11

Table 10: DDR2 I Specifications and Conditions – 2GB (Die Revision F) (Continued) DD Values shown for MT47H128M4 DDR2 SDRAM only and are computed from values specified in the 512Mb (128 Meg x 4) component data sheet Parameter Operating bank ...

Page 12

Table 11: DDR2 I Specifications and Conditions – 2GB (Die Revision G) (Continued) DD Values shown for MT47H1286M4 DDR2 SDRAM only and are computed from values specified in the 512Mb (128 Meg x 4) component data sheet Parameter Operating burst ...

Page 13

Table 12: DDR2 I Specifications and Conditions – 4GB (Die Revisions E and G) (Continued) DD Values shown for MT47H256M4 DDR2 SDRAM only and are computed from values specified in the 1Gb (256 Meg x 4) com- ponent data sheet ...

Page 14

Table 13: DDR2 I Specifications and Conditions – 4GB (Die Revision H) (Continued) DD Values shown for MT47H256M4 DDR2 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 4) com- ponent data sheet Parameter Precharge ...

Page 15

Table 14: DDR2 I Specifications and Conditions – 8GB (Die Revision C) DD Values shown for MT47H512M4 DDR2 SDRAM only and are computed from values specified in the 2Gb (512 Meg x 4) com- ponent data sheet Parameter Operating one ...

Page 16

Table 14: DDR2 I Specifications and Conditions – 8GB (Die Revision C) (Continued) DD Values shown for MT47H512M4 DDR2 SDRAM only and are computed from values specified in the 2Gb (512 Meg x 4) com- ponent data sheet Parameter Operating ...

Page 17

Register and PLL Specifications Table 15: Register Specifications SSTU32866 devices or equivalent Parameter Symbol DC high-level V Control, command, IH(DC) input voltage DC low-level V Control, command, IL(DC) input voltage AC high-level V Control, command, IH(AC) input voltage AC low-level ...

Page 18

Table 16: PLL Specifications CU877 device or equivalent Parameter Symbol DC high-level V IH input voltage DC low-level V IL input voltage Input voltage (limits high-level V IH input voltage DC low-level V IL input voltage Input ...

Page 19

Serial Presence-Detect For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD. Table 18: SPD EEPROM Operating Conditions Parameter/Condition Supply voltage Input high voltage: logic 1; All inputs Input low voltage: logic 0; All inputs Output low voltage: I ...

Page 20

Module Dimensions Figure 3: 240-Pin DDR2 RDIMM U1 U2 2.0 (0.079) R (4X) U12 U13 2.5 (0.098) D (2X) 2.3 (0.091) TYP Pin 1 1.0 (0.039) 2.21 (0.087) TYP 1.0 (0.039) TYP 70.66 (2.782) 45° (4X) U22 U23 U32 U33 ...

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