FDMS86500L Fairchild Semiconductor, FDMS86500L Datasheet

MOSFET Power 60V N-Channel PowerTrench MOSFET

FDMS86500L

Manufacturer Part Number
FDMS86500L
Description
MOSFET Power 60V N-Channel PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDMS86500L

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.5 mOhms
Forward Transconductance Gfs (max / Min)
95 S
Drain-source Breakdown Voltage
60 V
Continuous Drain Current
25 A
Power Dissipation
104 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
Power 56
Lead Free Status / Rohs Status
 Details

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©2011 Fairchild Semiconductor Corporation
FDMS86500L Rev.C1
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMS86500L
N-Channel PowerTrench
60 V, 80 A, 2.5 mΩ
Features
V
V
I
E
P
T
R
R
D
J
DS
GS
AS
D
θJC
θJA
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
Next
engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
, T
Symbol
Device Marking
STG
FDMS86500L
DS(on)
DS(on)
generation
= 2.5 mΩ at V
= 3.7 mΩ at V
Top
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
enhanced
GS
GS
FDMS86500L
= 10 V, I
= 4.5 V, I
-Continuous
-Continuous (Silicon limited)
-Pulsed
Device
Power 56
body
D
D
= 25 A
= 20 A
diode
T
®
A
D
= 25 °C unless otherwise noted
MOSFET
D
Parameter
technology,
D
D
Bottom
DS(on)
Power 56
Package
1
S
S
T
T
T
T
T
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r
diode reverse recovery performance.
Applications
C
C
A
C
A
S
= 25 °C
= 25 °C
= 25 °C
Primary Switch in isolated DC-DC
Synchronous Rectifier
Load Switch
= 25 °C
= 25 °C
Pin 1
G
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
D
D
D
D
(Note 4)
(Note 3)
5
6
7
8
DS(on)
Tape Width
, fast switching speed and body
12 mm
-55 to +150
Ratings
±20
158
180
240
104
2.5
1.2
60
80
25
50
September 2011
www.fairchildsemi.com
3000 units
4
3
2
1
Quantity
G
S
S
S
Units
°C/W
mJ
°C
W
V
A
V

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FDMS86500L Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMS86500L FDMS86500L ©2011 Fairchild Semiconductor Corporation FDMS86500L Rev.C1 ® MOSFET General Description = 25 A This N-Channel MOSFET has been designed specifically to D improve the overall efficiency and to minimize switch node ...

Page 2

... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° tbd mJ is based on starting Package-limited current based on ideal infinite heatsink condition. ©2011 Fairchild Semiconductor Corporation FDMS86500L Rev. °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 °C ...

Page 3

... J Figure 3. Normalized On- Resistance vs Junction Temperature 180 μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 120 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMS86500L Rev. °C unless otherwise noted 3 μ 1.5 2.0 2 100 125 150 - ...

Page 4

... LIMITED BY r DS(on) SINGLE PULSE T = MAX RATED 0 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMS86500L Rev. °C unless otherwise noted J 50000 10000 1000 100 120 100 100 1000 1000 ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDMS86500L Rev. °C unless otherwise noted J SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION (sec NOTES: DUTY FACTOR ...

Page 6

... Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDMS86500L Rev.C1 6 www.fairchildsemi.com ...

Page 7

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDMS86500L Rev.C1 ® * PDP SPM™ Power-SPM™ ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ ...

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