SJEP120R063 SEMISOUTH, SJEP120R063 Datasheet

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SJEP120R063

Manufacturer Part Number
SJEP120R063
Description
JFET, SIC, N-OFF, 1200V, 30A, TO247
Manufacturer
SEMISOUTH
Datasheets

Specifications of SJEP120R063

Transistor Type
JFET
Breakdown Voltage Vbr
1200V
Power Dissipation Pd
250W
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
TO-247
No. Of Pins
3
Rohs Compliant
Yes
Continuous Drain Current Id
30A
(1)
(2)
Continuous Drain Current
Pulsed Drain Current
Short Circuit Withstand Time
Power Dissipation
Gate-Source Voltage
Operating and Storage Temperature
Lead Temperature for Soldering
Thermal Resistance, junction-to-case
Thermal Resistance, junction-to-ambient
Normally-OFF Trench Silicon Carbide Power JFET
Features:
- Compatible with Standard Gate Driver ICs
- Positive Temperature Coefficient for Ease of Paralleling
- Temperature Independent Switching Behavior
- 175 ° C Maximum Operating Temperature
- R
- Voltage Controlled
- Low Gate Charge
- Low Intrinsic Capacitance
Applications:
- Solar Inverter
- SMPS
- Power Factor Correction
- Induction Heating
- UPS
- Motor Drive
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
May 2009
Limited by pulse width
Rg
DS(on)max
EXT
= 0.5 ohm, t
Parameter
of 0.063
p
< 200ns
(1)
Parameter
Symbol
I
I
T
D, Tj=125
D, Tj=175
j
T
V
, T
I
t
P
DM
SC
sold
GS
D
j,stg
V
DD
1/8" from case < 10 s
PRELIMINARY
< 800 V, T
Rev 1.3
TO-247
Conditions
4
T
T
T
T
Symbol
j
j
C
C
= 125 ° C
= 175 ° C
R
R
static
AC
= 25 ° C
= 25 ° C
th,JC
th,JA
(2)
C
< 125 ° C
1
Typ
2
R
-
-
3
DS(ON)max
E
BV
TS,typ
Value
DS
Product Summary
SJEP120R063
-55 to +175
-15 to +15
G(1)
G(1)
-15 to +3
Silicon Carbide
Value
250
260
Internal Schematic
30
20
60
50
Max
0.063
0.6
50
1200
440
D(2,4)
D(2,4)
S(3)
S(3)
° C / W
Unit
µJ
V
Unit
µs
° C
° C
W
A
A
V
V
1/7

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SJEP120R063 Summary of contents

Page 1

... V, T < 125 ° ° static j,stg T 1/8" from case < sold Symbol R th,JC R th,JA Rev 1.3 Silicon Carbide SJEP120R063 Product Summary BV 1200 DS R 0.063 DS(ON)max E 440 TS,typ D(2,4) D(2,4) G(1) G( S(3) S(3) Internal Schematic Value 250 - -15 to +15 -55 to +175 ...

Page 2

... Gate Driver = +15V, -10V 2.5ohm f EXT E on See Figure 15 and application note for E off gate drive recommendations 600 2 Rev 1.3 Silicon Carbide SJEP120R063 Value Min Typ Max 1200 - 200 1200 600 - -0.2 -0.6 - -0.2 - 0.045 0.063 - 0.11 0.75 1.00 1.25 ...

Page 3

... Figure 4. Typical Transfer Characteristics 0.00 Figure 6. Drain-Source On-resistance j 0.35 0.30 0.25 0.20 o 175 C 0.15 0. 0.05 0.00 2.5 3.0 Rev 1.3 Silicon Carbide SJEP120R063 125 ° C; parameter Drain-Source Voltage ( f 0.50 1.00 1.50 2.00 2. Gate-Source Voltage ( f 3.0; parameter: Tj DS(on ...

Page 4

... May 2009 PRELIMINARY Figure 8. Drain-Source On-resistance GS 200mA 1000mA 100 150 200 C iss C oss C rss 900 1200 o -1.5mV/ C 150 200 o C) Rev 1.3 Silicon Carbide SJEP120R063 f DS(ON 0.052 0.051 0.050 0.049 0.048 0.047 0.046 0.045 0.044 0.043 0.042 0.1 1.0 10.0 100.0 I ...

Page 5

... Figure 14. Switching Energy Losses = 2.5ohm E = f(R GEXT s 1000 900 E TS 800 700 600 E 500 OFF 400 E ON 300 200 100 Figure 15. Inductive Load Switching Circuit Rev 1.3 Silicon Carbide SJEP120R063 ); V = 600V 24A +15V/-10V GEXT 150 External Gate Resistance EXT OFF ...

Page 6

... May 2009 PRELIMINARY SJEP120R063 MILLIMETERS DIM MIN MAX A 4.903 5.157 A1 2.273 2.527 A2 1.853 2.108 b 1.073 1.327 b1 2.873 3.381 b2 1.903 2.386 c 0.600 0.752 D 20.823 21.077 D1 17.393 17.647 D2 1.063 1.317 e 5.450 E 15.773 16.027 E1 13.893 14.147 L 20.053 20.307 L1 4.168 4.472 Q 6.043 6.297 ØP 3.560 3.660 Ø ...

Page 7

... Unless expressly approved in writing by an authorized representative of SemiSouth, SemiSouth products are not designed, authorized or warranted for use in military, aircraft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or property or environmental damage. May 2009 PRELIMINARY SJEP120R063 Rev 1.3 Silicon Carbide 7/7 ...

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