DG211BDY-T1-E3 Vishay, DG211BDY-T1-E3 Datasheet - Page 3

IC SWITCH QUAD SPST 16SOIC

DG211BDY-T1-E3

Manufacturer Part Number
DG211BDY-T1-E3
Description
IC SWITCH QUAD SPST 16SOIC
Manufacturer
Vishay
Datasheet

Specifications of DG211BDY-T1-E3

Function
Switch
Circuit
4 x SPST - NC
On-state Resistance
85 Ohm
Current - Supply
10µA
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
16-SOIC (0.154", 3.90mm Width)
Analog Switch Type
SPST
No. Of Channels
4
On State Resistance Max
45ohm
Turn Off Time
200ns
Turn On Time
300ns
Supply Voltage Range
4.5V To 25V
Operating Temperature Range
-40°C To +85°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DG211BDY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DG211BDY-T1-E3
Manufacturer:
SAMSUNG
Quantity:
1 940
Part Number:
DG211BDY-T1-E3
0
Company:
Part Number:
DG211BDY-T1-E3
Quantity:
70 000
Document Number: 70040
S11-0179-Rev. J, 07-Feb-11
SPECIFICATIONS
Parameter
Analog Switch
Analog Signal Range
Drain-Source
On-Resistance
R
Source Off Leakage Current
Drain Off Leakage Current
Drain On Leakage Current
Digital Control
Input Voltage High
Input Voltage Low
Input Current
Input Capacitance
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
Source-Off Capacitance
Drain-Off Capacitance
Channel-On Capacitance
Off Isolation
Channel-to-Channel Crosstalk
Power Supply
Positive Supply Current
Negative Supply Current
Logic Supply Current
Power Supply Range for
Continuous Operation
DS(on)
Match
d
I
INH
V
R
Symbol
R
ANALOG
C
C
C
X
OIRR
I
I
I
V
DS(on)
V
t
V
S(off)
D(off)
D(on)
C
t
DS(on)
OFF
S(off)
D(off)
D(on)
TALK
ON
or I
Q
I+
INH
I-
I
INL
OP
L
IN
INL
C
L
= 1000 pF, V
Unless Otherwise Specified
V
V
V
V
V
L
V
C
S
S
D
V+ = 15 V, V- = - 15 V
D
= 5 V, V
D
V
L
= 1 V
= ± 14 V, V
= ± 14 V, V
= V
V
Test Conditions
S
= ± 10 V, I
= 15 pF, R
S
V
= 0 V, f = 1 MHz
V
see figure 2
S
IN
= V
V
INH
RMS
= 0 V, f = 1 MHz
S
= 0 or 5 V
IN
gen
D
= 10 V
or V
= 2.4 V, 0.8 V
, f = 100 kHz
= ± 14 V
= 0 V, R
D
S
S
L
INL
= ± 14 V
= ± 14 V
= 50 
= 1 mA
gen
= 0 
e
Temp.
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
a
DG211B, DG212B
Min.
± 4.5
- 0.5
- 0.5
- 0.5
- 15
- 10
- 10
- 50
2.4
- 5
- 5
- 1
b
- 40 °C to 85 °C
Vishay Siliconix
D Suffix
± 0.01
± 0.01
± 0.02
Typ.
45
16
90
95
2
5
1
5
5
c
www.vishay.com
Max.
± 22
100
300
200
0.5
0.5
0.5
0.8
15
85
10
10
50
10
50
5
5
1
b
Unit
pC
nA
µA
pF
pF
dB
µA
ns
V
V
V
3

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