M29W160ET7AZA6F Micron Technology Inc, M29W160ET7AZA6F Datasheet

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M29W160ET7AZA6F

Manufacturer Part Number
M29W160ET7AZA6F
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of M29W160ET7AZA6F

Cell Type
NOR
Density
16Mb
Access Time (max)
70ns
Interface Type
Parallel
Boot Type
Top
Address Bus
21/20Bit
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TFBGA
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
2M/1M
Supply Current
10mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M29W160ET7AZA6F
Manufacturer:
Micron Technology Inc
Quantity:
10 000
FEATURES SUMMARY
June 2009
SUPPLY VOLTAGE
ACCESS TIMES: 70, 90ns
PROGRAMMING TIME
35 MEMORY BLOCKS
PROGRAM/ERASE CONTROLLER
ERASE SUSPEND and RESUME MODES
UNLOCK BYPASS PROGRAM COMMAND
TEMPORARY BLOCK UNPROTECTION
MODE
COMMON FLASH INTERFACE
LOW POWER CONSUMPTION
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
Automotive Grade Parts Available
V
and Read
10μs per Byte/Word typical
1 Boot Block (Top or Bottom Location)
2 Parameter and 32 Main Blocks
Embedded Byte/Word Program
algorithms
Read and Program another Block during
Erase Suspend
Faster Production/Batch Programming
64 bit Security Code
Standby and Automatic Standby
Manufacturer Code: 0020h
Top Device Code M29W160ET: 22C4h
Bottom Device Code M29W160EB: 2249h
CC
= 2.7V to 3.6V for Program, Erase
16 Mbit (2Mb x8 or 1Mb x16, Boot Block)
Figure 1. Packages
3V Supply Flash Memory
FBGA64 (ZS)
11 x 13 mm
TFBGA48 (ZA)
TSOP48 (N)
12 x 20mm
6 x 8mm
M29W160EB
M29W160ET
FBGA
BGA
1/42

Related parts for M29W160ET7AZA6F

M29W160ET7AZA6F Summary of contents

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... Manufacturer Code: 0020h – Top Device Code M29W160ET: 22C4h – Bottom Device Code M29W160EB: 2249h Automotive Grade Parts Available June 2009 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory Figure 1. Packages M29W160ET M29W160EB TSOP48 ( 20mm FBGA TFBGA48 (ZA 8mm ...

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M29W160ET, M29W160EB TABLE OF CONTENTS FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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Unlock Bypass Reset Command ...

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... Table 19. Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 APPENDIX A.BLOCK ADDRESS TABLE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Table 20. Top Boot Block Addresses, M29W160ET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Table 21. Bottom Boot Block Addresses, M29W160EB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 APPENDIX B.COMMON FLASH INTERFACE (CFI Table 22. Query Structure Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Table 23. CFI Query Identification String Table 24. CFI Query System Interface Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Table 25. Device Geometry Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Table 26 ...

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SUMMARY DESCRIPTION The M29W160E Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be per- formed using a single low voltage (2.7 to 3.6V) supply. On power-up the ...

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M29W160ET, M29W160EB Figure 3. TSOP Connections 6/42 A15 1 48 A14 A13 A12 A11 A10 A9 A8 A19 M29W160ET M29W160EB A18 A17 ...

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Figure 4. TFBGA Connections (Top view through package A17 A18 ...

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M29W160ET, M29W160EB Figure 5. FBGA 64-ball Connections (Top view through package 8/42 ...

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Figure 6. Block Addresses (x8) M29W160ET Top Boot Block Addresses (x8) 1FFFFFh 16 KByte 1FC000h 1FBFFFh 8 KByte 1FA000h 1F9FFFh 8 KByte 1F8000h 1F7FFFh 32 KByte 1F0000h 1EFFFFh 64 KByte 1E0000h 01FFFFh 64 KByte 010000h 00FFFFh 64 KByte 000000h Note: ...

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M29W160ET, M29W160EB Figure 7. Block Addresses (x16) M29W160ET Top Boot Block Addresses (x16) FFFFFh 8 KWord FE000h FDFFFh 4 KWord FD000h FCFFFh 4 KWord FC000h FBFFFh 16 KWord F8000h F7FFFh 32 KWord F0000h 0FFFFh 32 KWord 08000h 07FFFh 32 KWord ...

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SIGNAL DESCRIPTIONS See Figure 2, Logic Diagram, and Table 1, Signal Names, for a brief overview of the signals connect this device. Address Inputs (A0-A19). The Address Inputs select the cells in the memory array to access dur- ...

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M29W160ET, M29W160EB BUS OPERATIONS There are five standard bus operations that control the device. These are Bus Read, Bus Write, Out- put Disable, Standby and Automatic Standby. See Tables 2 and 3, Bus Operations, for a summary. Typically glitches of ...

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Table 3. Bus Operations, BYTE = V Operation E V Bus Read IL V Bus Write IL Output Disable X V Standby IH Read Manufacturer V IL Code V Read Device Code IL Note ...

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M29W160ET, M29W160EB has occurred. When an error occurs the memory continues to output the Status Register. A Read/ Reset command must be issued to reset the error condition and return to Read mode. Note that the Program command cannot change ...

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... Read CFI Query Command. The Query Command is used to read data from the Common Flash Interface (CFI) Memory Area. This command is valid when the device is in the Read Array mode, or when the device is in Auto Select mode ...

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M29W160ET, M29W160EB Table 4. Commands, 16-bit mode, BYTE = V Command Addr 1 X Read/Reset 3 555 Auto Select 3 555 Program 4 555 Unlock Bypass 3 555 Unlock Bypass 2 X Program Unlock Bypass Reset 2 X Chip Erase ...

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Table 5. Commands, 8-bit mode, BYTE = V Command Addr 1 X Read/Reset 3 AAA Auto Select 3 AAA Program 4 AAA Unlock Bypass 3 AAA Unlock Bypass 2 X Program Unlock Bypass Reset 2 X Chip Erase 6 AAA ...

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M29W160ET, M29W160EB Table 6. Program/Erase Times and Program/Erase Endurance Cycles Parameter Chip Erase Block Erase (64 KBytes) Erase Suspend Latency Time Program (Byte or Word) Chip Program (Byte by Byte) Chip Program (Word by Word) Program/Erase Cycles (per Block) Data ...

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Note that the Program command cannot change a bit set to ’0’ back to ’1’ and attempting will set DQ5 to ‘1’. A Bus Read operation to that ad- dress will show the bit is still ‘0’. ...

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M29W160ET, M29W160EB Figure 8. Data Polling Flowchart START READ DQ5 & DQ7 at VALID ADDRESS DQ7 YES = DATA NO NO DQ5 = 1 YES READ DQ7 at VALID ADDRESS DQ7 YES = DATA NO FAIL MAXIMUM RATING Stressing the ...

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DC AND AC PARAMETERS This section summarizes the operating measure- ment conditions, and the DC and AC characteris- tics of the device. The parameters in the DC and AC characteristics Tables that follow, are derived from tests performed under the ...

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M29W160ET, M29W160EB Table 10. Device Capacitance Symbol Parameter C Input Capacitance IN C Output Capacitance OUT Note: Sampled only, not 100% tested. Table 11. DC Characteristics Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO I Supply ...

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Figure 12. Read Mode AC Waveforms A0-A19/ A– DQ0-DQ7/ DQ8-DQ15 BYTE tELBL/tELBH Table 12. Read AC Characteristics Symbol Alt t t Address Valid to Next Address Valid AVAV Address Valid to Output Valid AVQV ACC ...

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M29W160ET, M29W160EB Figure 13. Write AC Waveforms, Write Enable Controlled A0-A19/ A– DQ0-DQ7/ DQ8-DQ15 V CC tVCHEL RB Table 13. Write AC Characteristics, Write Enable Controlled Symbol Alt t t Address Valid to Next Address Valid AVAV ...

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Figure 14. Write AC Waveforms, Chip Enable Controlled A0-A19/ A– DQ0-DQ7/ DQ8-DQ15 V CC tVCHWL RB Table 14. Write AC Characteristics, Chip Enable Controlled Symbol Alt t t Address Valid to Next Address Valid AVAV WC t ...

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M29W160ET, M29W160EB Figure 15. Reset/Block Temporary Unprotect AC Waveforms tPLPX RP Table 15. Reset/Block Temporary Unprotect AC Characteristics Symbol Alt (1) t PHWL RP High to Write Enable Low, Chip Enable Low PHEL RH ...

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PACKAGE MECHANICAL Figure 16. TSOP48 – 48 lead Plastic Thin Small Outline 20mm, Package Outline, top view DIE Note: Drawing is not to scale. Table 16. TSOP48 – 48 lead Plastic Thin Small ...

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M29W160ET, M29W160EB Figure 17. TFBGA48 6x8mm - 6x8 ball array, 0.80 mm pitch, Package Outline, bottom view FE BALL "A1" Table 17. TFBGA48 6x8mm - 6x8 ball array, 0.80 mm pitch, Package Mechanical Data Symbol Typ A A1 ...

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Figure 18. FBGA64 mm— active ball array pitch, package outline, bottom view BALL "A1" A Table 18. FBGA64 mm— active ball array ...

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... M29W160ET, M29W160EB PART NUMBERING Table 19. Ordering Information Scheme Example: Device Type M29 = Parallel Flash Memory Device Function 3.6 V main family Array Size 160E = 16 Mbit Memory Array Configuration T = Top Boot B = Bottom Boot Speed Class device speed in conjunction with temperature range = 6 to denote Auto Grade (– °C) parts device speed in conjunction with temperature range = 6 to denote Industrial Grade (– ...

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APPENDIX A. BLOCK ADDRESS TABLE Table 20. Top Boot Block Addresses, M29W160ET Size Address Range # (KBytes) (x8 1FC000h-1FFFFFh 33 8 1FA000h-1FBFFFh 32 8 1F8000h-1F9FFFh 31 32 1F0000h-1F7FFFh 30 64 1E0000h-1EFFFFh 29 64 1D0000h-1DFFFFh 28 64 1C0000h-1CFFFFh 27 ...

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... APPENDIX B. COMMON FLASH INTERFACE (CFI) The Common Flash Interface is a JEDEC ap- proved, standardized data structure that can be read from the Flash memory device. It allows a system software to query the device to determine various electrical and timing parameters, density information and functions supported by the mem- ory ...

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Table 24. CFI Query System Interface Information Address Data x16 x8 1Bh 36h 0027h 1Ch 38h 0036h 1Dh 3Ah 0000h 1Eh 3Ch 0000h 1Fh 3Eh 0004h 20h 40h 0000h 21h 42h 000Ah 22h 44h 0000h 23h 46h 0004h 24h 48h ...

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... Description n Device Size = 2 in number of Bytes Flash Device Interface Code description Maximum number of Bytes in multi-Byte program or page = 2 Number of Erase Block Regions within the device. It specifies the number of regions within the device containing contiguous Erase Blocks of the same size. Region 1 Information ...

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Table 26. Primary Algorithm-Specific Extended Query Table Address Data x16 x8 40h 80h 0050h 41h 82h 0052h 42h 84h 0049h 43h 86h 0031h 44h 88h 0030h 45h 8Ah 0000h 46h 8Ch 0002h 47h 8Eh 0001h 48h 90h 0001h 49h 92h ...

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... Reset/Blocks Temporary Unprotect pin, RP. This can be achieved without violating the maximum ratings of the components on the micro- processor bus, therefore this technique is suitable for use after the Flash memory has been fitted to the system. ) volt protect a block follow the flowchart in Figure 21, In-System Block Protect Flowchart ...

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Figure 19. Programmer Equipment Block Protect Flowchart Note: 1. Address Inputs A19-A12 give the address of the block that protected imperative that they remain stable during the operation. 2. During the Protect and Verify phases ...

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M29W160ET, M29W160EB Figure 20. Programmer Equipment Chip Unprotect Flowchart NO = 1000 38/42 START PROTECT ALL BLOCKS CURRENT BLOCK = 0 A6, A12, A15 = V IH (1) ...

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Figure 21. In-System Equipment Block Protect Flowchart START WRITE 60h ADDRESS = BLOCK ADDRESS WRITE 60h ADDRESS = BLOCK ...

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M29W160ET, M29W160EB Figure 22. In-System Equipment Chip Unprotect Flowchart NO = 1000 ISSUE READ/RESET COMMAND FAIL 40/42 START PROTECT ALL BLOCKS CURRENT BLOCK = WRITE 60h ANY ADDRESS ...

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REVISION HISTORY Table 29. Document Revision History Date Version 06-Aug-2002 -01 27-Nov-2002 1.1 03-Dec-2002 1.2 21-Mar-2003 2.0 27-Jun-2003 2.1 26-Jan-2004 3.0 27-Mar-2008 4.0 12-March-2009 5.0 7-April-2009 6.0 7-May-2009 7.0 18-June-2009 8.0 Revision Details First Issue: originates from M29W160D datasheet dated ...

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... Copies of documents which have an order number and are referenced in this document, or other Numonyx literature may be obtained by visiting Numonyx StrataFlash is a trademark or registered trademark of Numonyx or its subsidiaries in the United States and other countries. *Other names and brands may be claimed as the property of others. ...

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