M29W320ET70ZE6E Micron Technology Inc, M29W320ET70ZE6E Datasheet
M29W320ET70ZE6E
Specifications of M29W320ET70ZE6E
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M29W320ET70ZE6E Summary of contents
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... Program/Erase cycles per block Electronic signature – Manufacturer code: 0020h – Top Device code M29W320ET: 2256h – Bottom Device code M29W320EB: 2257h ® RoHS packages available May 2009 M29W320ET M29W320EB 3V supply Flash memory TSOP48 ( FBGA TFBGA48 (ZE Rev 9 BGA FBGA64 (ZS 1/65 1 www ...
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Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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... Erase Timer bit (DQ3 5.5 Alternative Toggle bit (DQ2 Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . and ac parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 8 Package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 9 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 Appendix A Block Addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 Appendix B Common Flash Interface (CFI Appendix C Extended memory Block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56 9.1 Factory Locked Extended Block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56 9.2 Customer Lockable Extended Block . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56 3/65 ...
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Appendix D Block Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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List of tables Table 1. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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List of figures Figure 1. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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Description The M29W320E Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory ...
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Figure 1. Logic diagram Table 1. Signal names A0-A20 DQ0-DQ7 DQ8-DQ14 DQ15A– BYTE / 8/ / A0-A20 W M29W320ET E M29W320EB G ...
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Figure 2. TSOP connections V PP /WP A15 1 48 A14 A13 A12 A11 A10 A9 A8 A19 M29W320ET A20 M29W320EB A18 A17 ...
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Figure 3. TFBGA48 connections (top view through package 10/ A17 A2 A6 A18 ...
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Figure 4. FBGA64 connections (top view through package ...
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Figure 5. Block Addresses (x8) Top Boot Block (x8) Address lines A20-A0, DQ15A-1 000000h 64 KByte or 32 KWord 00FFFFh 2F0000h 64 KByte or 32 KWord 2FFFFFh 300000h 64 KByte or 32 KWord 30FFFFh 3E0000h 64 KByte or 32 KWord ...
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Figure 6. Block Addresses (x16) Top Boot Block (x16) Address lines A20-A0 000000h 64 KByte or 32 KWord 007FFFh 178000h 64 KByte or 32 KWord 17FFFFh 180000h 64 KByte or 32 KWord 187FFFh 1F0000h 64 KByte or 32 KWord 1F7FFFh ...
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Signal descriptions See Figure 1: Logic connected to this device. 2.1 Address Inputs (A0-A20) The Address Inputs select the cells in the memory array to access during Bus Read operations. During Bus Write operations they control the commands sent ...
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Write Enable (W) The Write Enable, W, controls the Bus Write operation of the memory’s Command interface. 2.8 V Write Protect (V PP/ The V /Write Protect pin provides two functions. The V PP use an external high voltage ...
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Ready/Busy Output (RB) The Ready/Busy pin is an open-drain output that can be used to identify when the device is performing a Program or Erase operation. During Program or Erase operations Ready/Busy is Low Ready/Busy is high-impedance ...
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Bus operations There are five standard bus operations that control the device. These are Bus Read, Bus Write, Output Disable, Standby and Automatic Standby. See and Table 2 Table on Chip Enable or Write Enable are ignored by the ...
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Automatic Standby If CMOS levels (V CC more the memory enters Automatic Standby where the internal Supply current is reduced to the Standby Supply current, I operation is in progress. 3.6 Special bus operations Additional bus operations can be ...
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Table 2. Bus operations, BYTE = V Operation E G Bus Read Bus Write Output Disable Standby Read Manufacturer code Read Device ...
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Table 3. Bus operations, BYTE = V Operation E G Bus Read Bus Write Output Disable Standby Read Manufacturer code Read Device ...
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Command interface All Bus Write operations to the memory are interpreted by the Command interface. Commands consist of one or more sequential Bus Write operations. Failure to observe a valid sequence of Bus Write operations will result in the ...
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... Read CFI Query command The Read CFI Query Command is used to read data from the Common Flash Interface (CFI) memory Area. This command is valid when the device is in the Read Array mode, or when the device is in Auto Select mode. One Bus Write cycle is required to issue the Read CFI Query Command. Once the command is issued subsequent Bus Read operations read from the Common Flash Interface memory Area ...
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Fast Program commands There are two Fast Program commands available to improve the programming throughput, by writing several adjacent words or bytes in parallel. The Quadruple byte Program command is available for x8 operations, while the Double word Program ...
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Unlock Bypass command The Unlock Bypass command is used in conjunction with the Unlock Bypass Program command to program the memory faster than with the standard program commands. When the cycle time to the device is long, considerable time ...
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Status register. A Read/Reset command must be issued to reset the error condition and return to Read mode. The Chip Erase Command sets all of the bits in unprotected blocks of the memory to ’1’. All previous data is lost. ...
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During Erase Suspend it is possible to Read and Program cells in blocks that are not being erased; both Read and Program operations behave as normal on these blocks. If any attempt is made to program in a protected block ...
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Table 4. Commands, 16-bit mode, BYTE = V Command Addr Data Addr Data 1 X Read/Reset 3 555 Auto Select 3 555 Program 4 555 Double word Program 3 555 Unlock Bypass 3 555 Unlock Bypass 2 X Program Unlock ...
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Table 5. Commands, 8-bit mode, BYTE = V Command Add 1 X Read/Reset 3 AAA Auto Select 3 AAA Program 4 AAA Quadruple byte Program 5 AAA Unlock Bypass 3 AAA Unlock Bypass Program 2 X Unlock Bypass Reset 2 ...
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Table 6. Program, Erase times and Program, Erase Endurance cycles Parameter Chip Erase Block Erase (64 Kbytes) Erase Suspend Latency time Program (byte or word) Double word Program (byte or word) Chip Program (byte by byte) Chip Program (word by ...
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Status register The M29W320E has one Status register. It provides information on the current or previous Program or Erase operations. The various bits convey information and errors on the operation. Bus Read operations from any address, always read the ...
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Error bit (DQ5) The Error bit can be used to identify errors detected by the Program/Erase Controller. The Error bit is set to ’1’ when a Program, Block Erase or Chip Erase operation fails to write the correct data ...
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Table 7. Status register bits Operation Program Program during Erase Suspend Program Error Chip Erase Block Erase before timeout Block Erase Erase Suspend Erase Error 1. Unspecified data bits should be ignored. 32/65 (1) Address DQ7 DQ6 Any Address DQ7 ...
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Figure 7. Data Polling flowchart START READ DQ5 & DQ7 at VALID ADDRESS DQ7 YES = DATA NO NO DQ5 = 1 YES READ DQ7 at VALID ADDRESS DQ7 YES = DATA NO FAIL PASS AI90194 33/65 ...
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Figure 8. Toggle flowchart Address of Block being Programmed or Erased. 34/65 START READ DQ6 ADDRESS = BA READ DQ5 & DQ6 ADDRESS = BA DQ6 NO = TOGGLE YES NO DQ5 = 1 YES READ DQ6 ...
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Maximum rating Stressing the device above the rating listed in the absolute maximum ratings table may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. These are stress ratings ...
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DC and ac parameters This section summarizes the operating measurement conditions, and the dc and ac characteristics of the device. The parameters in the dc and ac characteristics tables that follow, are derived from tests performed under the measurement ...
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Table 10. Device capacitance Symbol Parameter C Input capacitance IN C Output capacitance OUT 1. Sampled only, not 100% tested. Table 11. DC characteristics Symbol Parameter I Input Leakage current LI I Output Leakage current LO (1) I Supply current ...
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Figure 11. Read mode ac waveforms A0-A20/ A– DQ0-DQ7/ DQ8-DQ15 BYTE tELBL/tELBH Table 12. Read ac characteristics Symbol Alt t t Address Valid to Next Address Valid AVAV Address Valid to Output Valid AVQV ACC ...
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Figure 12. Write ac waveforms, Write Enable controlled A0-A20/ A–1 E tELWL G tGHWL W DQ0-DQ7/ DQ8-DQ15 V CC tVCHEL RB Table 13. Write ac characteristics, Write Enable controlled Symbol Alt t t Address Valid to Next Address Valid AVAV ...
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Figure 13. Write ac waveforms, Chip Enable controlled A0-A20/ A–1 W tWLEL G tGHEL E DQ0-DQ7/ DQ8-DQ15 V CC tVCHWL RB Table 14. Write ac characteristics, Chip Enable controlled Symbol Alt t t Address Valid to Next Address Valid AVAV ...
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Figure 14. Toggle and alternative Toggle bits mechanism, Chip Enable controlled A0-A20 VALID ADDRESS E G Data (1) (2) DQ2 /DQ6 1. The Toggle bit is output on DQ6. 2. The alternative Toggle bit is output on DQ2. Figure 15. ...
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Figure 16. Reset/Block Temporary Unprotect ac waveforms tPLPX RP Table 16. Reset/Block Temporary Unprotect ac characteristics Symbol Alt (1) t PHWL RP High to Write Enable Low, Chip Enable t t PHEL RH Low, Output Enable ...
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Package mechanical Figure 18. TSOP48 Lead Plastic Thin Small Outline, 12x20 mm package outline, top view DIE 1. Drawing not to scale. Table 17. TSOP48 Lead Plastic Thin Small Outline, 12x20 mm, package mechanical data millimeters ...
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Figure 19. TFBGA48 6x8mm-6x8 Ball Array, 0.8mm Pitch, package outline, bottom view FD FE BALL "A1" Drawing not to scale. Table 18. TFBGA48 6x8mm - 6x8 Ball Array, 0.8mm Pitch, package mechanical data millimeters Symbol Typ A ...
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Figure 20. FBGA64 active ball array pitch, package outline, bottom view BALL "A1" Drawing is not to scale. Table 19. FBGA64 ...
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Part numbering Table 20. Ordering information scheme Example: Device type M29 Operating voltage 2.7 to 3.6V CC Device function 320E = 32 Mbit (x8/x16), Uniform Parameter Blocks, Boot Block Array matrix T = Top Boot ...
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Appendix A Block Addresses Table 21. Top Boot Block Addresses, M29W320ET Block size Block (Kbytes/Kwords) 0 64/32 1 64/32 2 64/32 3 64/32 4 64/32 5 64/32 6 64/32 7 64/32 8 64/32 9 64/32 10 64/32 11 64/32 12 ...
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Table 21. Top Boot Block Addresses, M29W320ET (continued) Block size Block (Kbytes/Kwords) 28 64/32 29 64/32 30 64/32 31 64/32 32 64/32 33 64/32 34 64/32 35 64/32 36 64/32 37 64/32 38 64/32 39 64/32 40 64/32 41 64/32 ...
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Table 21. Top Boot Block Addresses, M29W320ET (continued) Block size Protection Block Block (Kbytes/Kwords) 60 64/32 61 64/32 Protection group 62 64/32 63 8/4 Protection group 64 8/4 Protection group 65 8/4 Protection group 66 8/4 Protection group 67 8/4 ...
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Table 22. Bottom Boot Block Addresses, M29W320EB (continued) Block size Block (Kbytes/Kwords) 19 64/32 20 64/32 21 64/32 22 64/32 23 64/32 24 64/32 25 64/32 26 64/32 27 64/32 28 64/32 29 64/32 30 64/32 31 64/32 32 64/32 ...
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Table 22. Bottom Boot Block Addresses, M29W320EB (continued) Block size Protection Block Block (Kbytes/Kwords) 51 64/32 52 64/32 Protection group 53 64/32 54 64/32 55 64/32 56 64/32 Protection group 57 64/32 58 64/32 59 64/32 60 64/32 Protection group ...
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... Common Flash Interface (CFI) The Common Flash Interface is a JEDEC approved, standardized data structure that can be read from the Flash memory device. It allows a system software to query the device to determine various electrical and timing parameters, density information and functions supported by the memory. The system can interface easily with the device, enabling the software to upgrade itself when necessary ...
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Table 25. CFI Query System Interface Information Address Data x16 x8 1Bh 36h 0027h 1Ch 38h 0036h 1Dh 3Ah 00B5h 1Eh 3Ch 00C5h 1Fh 3Eh 0004h 20h 40h 0000h 21h 42h 000Ah 22h 44h 0000h 23h 46h 0004h 24h 48h ...
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... Description n Device Size = 2 in number of bytes Flash Device Interface code description Maximum number of bytes in multi-byte program or page = 2 Number of Erase Block regions. It specifies the number of regions containing contiguous Erase Blocks of the same size. Region 1 information Number of Erase Blocks of identical size = 0007h+1 ...
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Table 27. Primary Algorithm-specific extended Query table (continued) Address Data x16 x8 4Ah 94h 0000h 4Bh 96h 0000h 4Ch 98h 0000h 4Dh 9Ah 00B5h 4Eh 9Ch 00C5h 0002h 4Fh 9Eh 0003h Table 28. Security code area Address Data x16 x8 ...
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Appendix C Extended memory Block The M29W320E has an extra block, the Extended Block, that can be accessed using a dedicated command. This Extended Block is 32 Kwords in x16 mode and 64 Kbytes in x8 mode used ...
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Once the Extended Block is programmed and protected, the Exit Extended Block command must be issued to exit the Extended Block mode and return the device to Read mode. Table 29. Extended Block Address and data Device x8 3F0000h-3F000Fh M29W320ET ...
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Appendix D Block Protection Block protection can be used to prevent any operation from modifying the data stored in the memory. The blocks are protected in groups, refer to and Table 21 Table Erase operations within the protected group fail ...
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Table 30. Programmer technique Bus operations, BYTE = V Operation E G Block (group ( Protect Chip Unprotect Block (group Protection Verify Block (group ...
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Figure 21. Programmer Equipment Group Protect flowchart 1. Block Protection groups are shown in 60/65 START ADDRESS = GROUP ADDRESS Wait 4µs W ...
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Figure 22. Programmer Equipment Chip Unprotect flowchart NO ++n = 1000 FAIL 1. Block Protection groups are shown in START PROTECT ALL GROUPS CURRENT GROUP = 0 A6, ...
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Figure 23. In-system Equipment Group Protect flowchart 1. Block Protection groups are shown can be either when using the In-system technique to protect the Extended Block 62/65 START n = ...
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Figure 24. In-system Equipment Chip Unprotect flowchart ++ 1000 ISSUE READ/RESET COMMAND FAIL 1. Block Protection groups are shown in START PROTECT ALL GROUPS CURRENT GROUP = ...
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Revision history Table 31. Document revision history Date Version 15-Apr-2004 18-Nov-2004 14-Mar-2005 28-Mar-2006 16-Jan-2007 26-Mar-2008 5-March 2009 12-March-2009 1-April-2009 64/65 1.0 First Issue. Protection group for Blocks and and Blocks modifed in Table 21: ...
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... Copies of documents which have an order number and are referenced in this document, or other Numonyx literature may be obtained by visiting Numonyx's website at http://www.numonyx.com. Numonyx StrataFlash is a trademark or registered trademark of Numonyx or its subsidiaries in the United States and other countries. *Other names and brands may be claimed as the property of others. ...