M29W640FT70N6E Micron Technology Inc, M29W640FT70N6E Datasheet

no-image

M29W640FT70N6E

Manufacturer Part Number
M29W640FT70N6E
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of M29W640FT70N6E

Cell Type
NOR
Density
64Mb
Access Time (max)
70ns
Interface Type
Parallel
Boot Type
Top
Address Bus
23/22Bit
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
8M/4M
Supply Current
10mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M29W640FT70N6E
Manufacturer:
ST
Quantity:
1 000
Part Number:
M29W640FT70N6E
Manufacturer:
ST
Quantity:
17 280
Part Number:
M29W640FT70N6E
Manufacturer:
ST
0
Part Number:
M29W640FT70N6E
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
M29W640FT70N6E
Quantity:
5
Feature summary
Table 1.
September 2008
Supply voltage
– V
– V
Asynchronous Random/Page Read
– Page Width: 4 Words
– Page Access: 25ns
– Random Access: 60ns, 70ns
Programming time
– 10μs per Byte/Word typical
– 4 Words / 8 Bytes Program
135 Memory Blocks
– 1 Boot Block and 7 Parameter Blocks,
– 127 Main Blocks, 64 KBytes each
Program/Erase Controller
– Embedded Byte/Word Program algorithms
Program/Erase Suspend and Resume
– Read from any Block during Program
– Read and Program another Block during
Unlock Bypass Program command
– Faster Production/Batch Programming
V
Temporary Block Unprotection mode
Common Flash Interface
– 64-bit Security Code
PP
Read
8 KBytes each (Top or Bottom location)
Suspend
Erase Suspend
/WP pin for Fast Program and Write Protect
CC
PP
=12 V for Fast Program (optional)
= 2.7V to 3.6V for Program, Erase,
Device Codes
Root Part Number
M29W640FT
M29W640FB
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block)
Rev 8
Extended Memory Block
Extra block used as security block or to store
additional information
Low power consumption
– Standby and Automatic Standby
100,000 Program/Erase cycles per block
Electronic Signature
– Manufacturer Code: 0020h
ECOPACK
3V Supply Flash Memory
®
packages
TFBGA48 (ZA)
Device Code
TSOP48 (N)
12 x 20mm
22EDh
22FDh
6x8mm
M29W640FB
FBGA
M29W640FT
www.Numonyx.com
1/71
1

Related parts for M29W640FT70N6E

M29W640FT70N6E Summary of contents

Page 1

... Extra block used as security block or to store additional information Low power consumption – Standby and Automatic Standby 100,000 Program/Erase cycles per block Electronic Signature – Manufacturer Code: 0020h ECOPACK Rev 8 M29W640FT M29W640FB 3V Supply Flash Memory TSOP48 ( 20mm FBGA TFBGA48 (ZA) 6x8mm ® packages Device Code 22EDh 22FDh www ...

Page 2

Contents 1 Summary description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

Chip Erase command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 4

... Appendix B Common Flash Interface (CFI Appendix C Extended Memory Block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62 C.1 Factory Locked Extended Block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62 C.2 Customer Lockable Extended Block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62 Appendix D Block protection D.1 Programmer technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64 D.2 In-System technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 4/71 ...

Page 5

List of tables Table 1. Device Codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 6

List of figures Figure 1. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 7

Summary description The M29W640F Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the ...

Page 8

Figure 1. Logic diagram Table 2. Signal names A0-A21 DQ0-DQ7 DQ8-DQ14 DQ15A–1 (or DQ15 BYTE / 8/ / A0-A21 W M29W640FT E ...

Page 9

Figure 2. TSOP connections A15 A14 A13 A12 A11 A10 A9 A8 A19 A20 W RP A21 V PP /WP RB A18 A17 A16 BYTE V SS DQ15A–1 DQ7 DQ14 DQ6 ...

Page 10

Figure 3. TFBGA48 connections (top view through package 10/ A17 A2 A6 A18 A21 A1 A5 A20 A19 ...

Page 11

Signal descriptions See Figure 1: Logic connected to this device. 2.1 Address Inputs (A0-A21) The Address Inputs select the cells in the memory array to access during Bus Read operations. During Bus Write operations they control the commands sent ...

Page 12

Write Enable (W) The Write Enable, W, controls the Bus Write operation of the memory’s Command Interface. 2.8 V /Write Protect (V PP The V /Write Protect pin provides two functions. The V PP use an external high voltage ...

Page 13

Reset/Block Temporary Unprotect (RP) The Reset/Block Temporary Unprotect pin can be used to apply a Hardware Reset to the memory or to temporarily unprotect all Blocks that have been protected. Note that ...

Page 14

V Supply Voltage (2.7V to 3.6V provides the power supply for all operations (Read, Program and Erase). CC The Command Interface is disabled when the V Voltage This prevents Bus Write operations from accidentally damaging ...

Page 15

Bus operations There are five standard bus operations that control the device. These are Bus Read, Bus Write, Output Disable, Standby and Automatic Standby. See and = V Table 5: Bus operations, BYTE = V IL than 5ns on ...

Page 16

Automatic Standby If CMOS levels (V CC more the memory enters Automatic Standby where the internal Supply Current is reduced to the Standby Supply Current, I Read operation is in progress. 3.6 Special Bus operations Additional bus operations can ...

Page 17

Table 4. Bus operations, BYTE = V Operation E Bus Read Bus Write Output Disable X V Standby V IH Read Manufacturer Code Read Device Code Read Extended ...

Page 18

Command interface All Bus Write operations to the memory are interpreted by the Command Interface. Commands consist of one or more sequential Bus Write operations. Failure to observe a valid sequence of Bus Write operations will result in the ...

Page 19

... Read CFI Query command The Read CFI Query Command is used to read data from the Common Flash Interface (CFI) Memory Area. This command is valid when the device is in the Read Array mode, or when the device is in Autoselected mode. One Bus Write cycle is required to issue the Read CFI Query Command. Once the command is issued subsequent Bus Read operations read from the Common Flash Interface Memory Area ...

Page 20

Block Erase command The Block Erase command can be used to erase a list of one or more blocks. Six Bus Write operations are required to select the first block in the list. Each additional block in the list ...

Page 21

Erase Resume command The Erase Resume command must be used to restart the Program/Erase Controller after an Erase Suspend. The device must be in Read Array mode before the Resume command will be accepted. An erase can be suspended ...

Page 22

Program command The Program command can be used to program a value to one address in the memory array at a time. The command requires four Bus Write operations, the final write operation latches the address and data, and ...

Page 23

Fast Program commands There are four Fast Program commands available to improve the programming throughput, by writing several adjacent words or bytes in parallel. The Double, Quadruple and Octuple Byte Program commands are available for x8 operations, while the ...

Page 24

Octuple Byte Program command This is used to write eight adjacent Bytes mode, simultaneously. The addresses of the eight Bytes must differ only in A1, A0 and DQ15A-1. Nine bus write cycles are necessary to issue the ...

Page 25

Quadruple Word Program command This is used to write a page of four adjacent Words (or 8 adjacent Bytes), in x16 mode, simultaneously. The addresses of the four Words must differ only in A1 and A0. Five bus write ...

Page 26

Unlock Bypass Reset command The Unlock Bypass Reset command can be used to return to Read/Reset mode from Unlock Bypass Mode. Two Bus Write operations are required to issue the Unlock Bypass Reset command. Read/Reset command does not exit ...

Page 27

Table 6. Commands, 16-bit mode, BYTE = V Command Addr Data Addr Data 1 X Read/Reset 3 555 Auto Select 3 555 Program 4 555 Double Word Program 3 555 Quadruple Word 5 555 Program Unlock Bypass 3 555 Unlock ...

Page 28

Table 7. Commands, 8-bit mode, BYTE = V Command 1st 2nd Add Data Add Data Add Data Add Data Add Data Add Data Add Data Add Data Add Data Read/Reset 3 AAA AA 555 55 Auto Select ...

Page 29

Table 8. Program, Erase times and Program, Erase Endurance cycles Parameter Chip Erase Block Erase (64 KBytes) Erase Suspend Latency time Program (Byte or Word) Double Byte Double Word /Quadruple Byte Program Quadruple Word / Octuple Byte Program Chip Program ...

Page 30

Status Register Bus Read operations from any address always read the Status Register during Program and Erase operations also read during Erase Suspend when an address within a block being erased is accessed. The bits in the ...

Page 31

Error Bit (DQ5) The Error Bit can be used to identify errors detected by the Program/Erase Controller. The Error Bit is set to ’1’ when a Program, Block Erase or Chip Erase operation fails to write the correct data ...

Page 32

Table 9. Status Register Bits Operation Program Program During Erase Suspend Program Error Chip Erase Block Erase before timeout Block Erase Erase Suspend Erase Error 1. Unspecified data bits should be ignored. Figure 4. Data Polling flowchart 32/71 (1) Address ...

Page 33

Figure 5. Data Toggle flowchart START READ DQ6 READ DQ5 & DQ6 DQ6 NO = TOGGLE YES NO DQ5 = 1 YES READ DQ6 TWICE DQ6 NO = TOGGLE YES FAIL PASS AI90195B 33/71 ...

Page 34

Maximum rating Stressing the device above the rating listed in the Absolute Maximum Ratings table may cause permanent damage to the device. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. These are stress ratings ...

Page 35

DC and AC parameters This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and AC Characteristic tables that follow are derived from tests performed under the ...

Page 36

Table 12. Device capacitance Symbol C Input capacitance IN C Output capacitance OUT 1. Sampled only, not 100% tested. Table 13. DC characteristics Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO I Supply Current (Read) CC1 ...

Page 37

Figure 8. Read Mode AC waveforms A0-A20/ A– DQ0-DQ7/ DQ8-DQ15 BYTE tELBL/tELBH Figure 9. Page Read AC waveforms A2-A21 A0-A1 VALID tAVQV E tELQV G tGLQV DQ0-DQ15 tAVAV VALID tAVQV tELQV tELQX tGLQX tGLQV tBHQV VALID ADDRESS VALID ...

Page 38

Table 14. Read AC characteristics Symbol Alt t t Address Valid to Next Address Valid AVAV Address Valid to Output Valid AVQV ACC t t Address Valid to Output Valid (Page) AVQV1 PAGE ( Chip ...

Page 39

Figure 10. Write AC waveforms, Write Enable controlled A0-A20/ A–1 E tELWL G tGHWL W DQ0-DQ7/ DQ8-DQ15 V CC tVCHEL RB tAVAV VALID tAVWL tWLWH tDVWH VALID tWHRL tWLAX tWHEH tWHGL tWHWL tWHDX AI05560 39/71 ...

Page 40

Table 15. Write AC characteristics, Write Enable controlled Symbol Alt t t Address Valid to Next Address Valid AVAV Chip Enable Low to Write Enable Low ELWL Write Enable Low to Write Enable High ...

Page 41

Figure 11. Write AC waveforms, Chip Enable controlled A0-A20/ A–1 W tWLEL G tGHEL E DQ0-DQ7/ DQ8-DQ15 V CC tVCHWL RB tAVAV VALID tAVEL tELEH tDVEH VALID tEHRL tELAX tEHWH tEHGL tEHEL tEHDX AI05561 41/71 ...

Page 42

Table 16. Write AC characteristics, Chip Enable controlled Symbol Alt t t Address Valid to Next Address Valid AVAV Write Enable Low to Chip Enable Low WLEL Chip Enable Low to Chip Enable High ...

Page 43

Figure 13. Accelerated Program Timing waveforms / tVHVPP Table 17. Reset/Block Temporary Unprotect AC characteristics Symbol Alt (1) t PHWL RP High to Write Enable Low, Chip Enable Low ...

Page 44

Package mechanical Figure 14. TSOP48 – 48 lead Plastic Thin Small Outline 20mm, top view package outline DIE 1. Drawing is not to scale. Table 18. TSOP48 – 48 lead Plastic Thin Small Outline, ...

Page 45

Figure 15. TFBGA48 6x8mm - 6x8 active ball array, 0.8mm pitch, package outline FD FE BALL "A1" Drawing is not to scale. Table 19. TFBGA48 6x8mm - 6x8 active ball array, 0.8mm pitch, package mechanical ...

Page 46

Part numbering Table 20. Ordering information scheme Example: Device Type M29 Operating Voltage 2.7 to 3.6V CC Device Function 640F = 64 Mbit (x8 / x16), Boot Block Array Matrix T = Top Boot B ...

Page 47

Appendix A Block addresses Table 21. Top Boot Block addresses, M29W640FT Block KBytes/KWords Protection Block Group 0 64/32 1 64/32 2 64/32 3 64/32 4 64/32 5 64/32 6 64/32 7 64/32 8 64/32 9 64/32 10 64/32 11 64/32 ...

Page 48

Table 21. Top Boot Block addresses, M29W640FT (continued) Block KBytes/KWords Protection Block Group 32 64/32 33 64/32 34 64/32 35 64/32 36 64/32 37 64/32 38 64/32 39 64/32 40 64/32 41 64/32 42 64/32 43 64/32 44 64/32 45 ...

Page 49

Table 21. Top Boot Block addresses, M29W640FT (continued) Block KBytes/KWords Protection Block Group 64 64/32 65 64/32 66 64/32 67 64/32 68 64/32 69 64/32 70 64/32 71 64/32 72 64/32 73 64/32 74 64/32 75 64/32 76 64/32 77 ...

Page 50

Table 21. Top Boot Block addresses, M29W640FT (continued) Block KBytes/KWords Protection Block Group 96 64/32 97 64/32 98 64/32 99 64/32 100 64/32 101 64/32 102 64/32 103 64/32 104 64/32 105 64/32 106 64/32 107 64/32 108 64/32 109 ...

Page 51

Table 21. Top Boot Block addresses, M29W640FT (continued) Block KBytes/KWords Protection Block Group 124 64/32 125 64/32 126 64/32 127 8/4 128 8/4 129 8/4 130 8/4 131 8/4 132 8/4 133 8/4 134 8/4 1. Used as the Extended ...

Page 52

Table 22. Bottom Boot Block addresses, M29W640FB Block KBytes/KWords 0 8/4 1 8/4 2 8/4 3 8/4 4 8/4 5 8/4 6 8/4 7 8/4 8 64/32 9 64/32 10 64/32 11 64/32 12 64/32 13 64/32 14 64/32 15 ...

Page 53

Table 22. Bottom Boot Block addresses, M29W640FB (continued) Block KBytes/KWords 35 64/32 36 64/32 37 64/32 38 64/32 39 64/32 40 64/32 41 64/32 42 64/32 43 64/32 44 64/32 45 64/32 46 64/32 47 64/32 48 64/32 49 64/32 ...

Page 54

Table 22. Bottom Boot Block addresses, M29W640FB (continued) Block KBytes/KWords 67 64/32 68 64/32 69 64/32 70 64/32 71 64/32 72 64/32 73 64/32 74 64/32 75 64/32 76 64/32 77 64/32 78 64/32 79 64/32 80 64/32 81 64/32 ...

Page 55

Table 22. Bottom Boot Block addresses, M29W640FB (continued) Block KBytes/KWords 99 64/32 100 64/32 101 64/32 102 64/32 103 64/32 104 64/32 105 64/32 106 64/32 107 64/32 108 64/32 109 64/32 110 64/32 111 64/32 112 64/32 113 64/32 ...

Page 56

Table 22. Bottom Boot Block addresses, M29W640FB (continued) Block KBytes/KWords 131 64/32 132 64/32 133 64/32 134 64/32 1. Used as the Extended Block addresses in Extended Block mode. 56/71 Protection Block Group 7C0000h-7CFFFFh 7D0000h-7DFFFFh Protection Group 7E0000h-7EFFFFh 7F0000h-7FFFFFh (x8) ...

Page 57

... Common Flash Interface (CFI) The Common Flash Interface is a JEDEC approved, standardized data structure that can be read from the Flash memory device. It allows a system software to query the device to determine various electrical and timing parameters, density information and functions supported by the memory. The system can interface easily with the device, enabling the software to upgrade itself when necessary ...

Page 58

Table 24. CFI Query Identification String Address Data x16 x8 10h 20h 0051h 11h 22h 0052h Query Unique ASCII String "QRY" 12h 24h 0059h 13h 26h 0002h Primary Algorithm Command Set and Control Interface ID code 14h 28h 0000h 15h ...

Page 59

... Device Geometry Definition Address Data x16 x8 27h 4Eh 0017h Device Size = 2 28h 50h 0002h Flash Device Interface Code description 29h 52h 0000h 2Ah 54h 0004h Maximum number of bytes in multi-byte program or page = 2 2Bh 56h 0000h Number of Erase Block Regions. It specifies the number of ...

Page 60

Table 27. Primary Algorithm-specific Extended Query table Address Data x16 x8 40h 80h 0050h 41h 82h 0052h 42h 84h 0049h 43h 86h 0031h Major version number, ASCII 44h 88h 0033h Minor version number, ASCII 45h 8Ah 0000h 46h 8Ch 0002h ...

Page 61

Table 28. Security Code Area Address Data x16 x8 61h C3h, C2h XXXX 62h C5h, C4h XXXX 63h C7h, C6h XXXX 64h C9h, C8h XXXX Description 64 bit: unique device number 61/71 ...

Page 62

Appendix C Extended Memory Block The M29W640F has an extra block, the Extended Block, that can be accessed using a dedicated command. This Extended Block is 128 Words in x16 mode and 256 Bytes in x8 mode used ...

Page 63

Table 29. Extended Block address and data Address x8 x16 000000h-00007Fh 000000h-00003Fh 000080h-0000FFh 000040h-00007Fh Data Factory Locked Customer Lockable Security Identification Number Unavailable Determined by customer 63/71 ...

Page 64

Appendix D Block protection Block protection can be used to prevent any operation from modifying the data stored in the memory. The blocks are protected in groups, refer to and Table 21 Table 22 Erase operations within the protected group ...

Page 65

Table 30. Programmer technique bus operations, BYTE = V Operation E G Block (Group ( Protect Chip Unprotect Block (Group Protection Verify Block (Group ...

Page 66

Figure 16. Programmer Equipment Group Protect flowchart 1. Block Protection Groups are shown in 66/71 START ADDRESS = GROUP ADDRESS Wait 4µs W ...

Page 67

Figure 17. Programmer Equipment Chip Unprotect flowchart ADDRESS = CURRENT GROUP ADDRESS NO ++n = 1000 YES FAIL 1. Block Protection Groups are shown in START PROTECT ALL GROUPS n = ...

Page 68

Figure 18. In-System Equipment Group Protect flowchart 1. Block Protection Groups are shown can be either at V 68/71 START WRITE 60h ADDRESS = GROUP ADDRESS A0, A2, A3, A6 ...

Page 69

Figure 19. In-System Equipment Chip Unprotect flowchart ADDRESS = CURRENT GROUP ADDRESS ADDRESS = CURRENT GROUP ADDRESS ++ 1000 YES ISSUE READ/RESET COMMAND FAIL 1. Block Protection Groups are shown in START PROTECT ALL ...

Page 70

Revision history Table 31. Document revision history Date Revision 01-Mar-2005 0.1 17-May-2005 0.2 07-Oct-2005 1.0 02-Dec-2005 15-Dec-2005 10-Mar-2006 23-Aug-2006 25-Oct-2006 10-Dec-2007 28-Aug-2008 70/71 First Issue. Asynchronous Page mode added. 70ns speed class added. Device codes modified. TFBGA63 replaced by TFBGA48 ...

Page 71

... Copies of documents which have an order number and are referenced in this document, or other Numonyx literature may be obtained by visiting Numonyx's website at http://www.numonyx.com. Numonyx StrataFlash is a trademark or registered trademark of Numonyx or its subsidiaries in the United States and other countries. *Other names and brands may be claimed as the property of others. ...

Related keywords