M28W160CT70N6F Micron Technology Inc, M28W160CT70N6F Datasheet

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M28W160CT70N6F

Manufacturer Part Number
M28W160CT70N6F
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of M28W160CT70N6F

Cell Type
NOR
Density
16Mb
Access Time (max)
70ns
Interface Type
Parallel
Boot Type
Top
Address Bus
20b
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
16b
Number Of Words
1M
Supply Current
20mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Compliant

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M28W160CT70N6F
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FEATURES SUMMARY
December 2007
SUPPLY VOLTAGE
– V
– V
– V
ACCESS TIME: 70, 85, 90,100ns
PROGRAMMING TIME:
– 10µs typical
– Double Word Programming Option
COMMON FLASH INTERFACE
– 64 bit Security Code
MEMORY BLOCKS
– Parameter Blocks (Top or Bottom location)
– Main Blocks
BLOCK LOCKING
– All blocks locked at Power Up
– Any combination of blocks can be locked
– WP for Block Lock-Down
SECURITY
– 64 bit user Programmable OTP cells
– 64 bit unique device identifier
– One Parameter Block Permanently Lockable
AUTOMATIC STAND-BY MODE
PROGRAM and ERASE SUSPEND
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ECOPACK
DD
DDQ
PP
= 12V for fast Program (optional)
= 2.7V to 3.6V Core Power Supply
= 1.65V to 3.6V for Input/Output
®
PACKAGES AVAILABLE
Figure 1. Packages
Table 1. Device Codes
16 Mbit (1Mb x16, Boot Block)
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
Root Part Number
M28W160CB
M28W160CT
3V Supply Flash Memory
TFBGA46 (ZB)
6.39 x 6.37mm
TSOP48 (N)
12 x 20mm
M28W160CB
M28W160CT
FBGA
Device Code
88CEh
88CFh
1/50

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M28W160CT70N6F Summary of contents

Page 1

... PROGRAM/ERASE CYCLES per BLOCK ® ■ ECOPACK PACKAGES AVAILABLE December 2007 M28W160CT M28W160CB 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory Figure 1. Packages FBGA TFBGA46 (ZB) 6.39 x 6.37mm TSOP48 ( 20mm ■ ELECTRONIC SIGNATURE – Manufacturer Code: 20h Table 1. Device Codes ...

Page 2

M28W160CT, M28W160CB TABLE OF CONTENTS SUMMARY DESCRIPTION ...

Page 3

Table 4. Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 4

... Table 23. Daisy Chain Ordering Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 APPENDIX A. BLOCK ADDRESS TABLES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Table 24. Top Boot Block Addresses, M28W160CT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Table 25. Bottom Boot Block Addresses, M28W160CB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 APPENDIX B. COMMON FLASH INTERFACE (CFI Table 26. Query Structure Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 Table 27. CFI Query Identification String . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 Table 28. CFI Query System Interface Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 Table 29 ...

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... SUMMARY DESCRIPTION The M28W160C Mbit (1 Mbit x 16) non-vol- atile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. V allows to drive the I/O pin down to DDQ 1 ...

Page 6

M28W160CT, M28W160CB Figure 2. Logic Diagram DDQ A0-A19 W E M28W160CT M28W160CB Figure 3. TSOP Connections 6/50 Table 2. Signal Names A0-A19 DQ0-DQ15 16 E DQ0-DQ15 ...

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Figure 4. TFBGA Connections (Top view through package A13 B A14 C A15 D A16 E V DDQ A11 A18 A10 W A12 A9 DQ14 DQ5 ...

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M28W160CT, M28W160CB Figure 5. Block Addresses M28W160CT Top Boot Block Addresses FFFFF 4 KWords FF000 F8FFF 4 KWords F8000 F7FFF 32 KWords F0000 0FFFF 32 KWords 08000 07FFF 32 KWords 00000 Note: Also see Appendix A, Tables 24 and 25 ...

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SIGNAL DESCRIPTIONS See Figure 2 Logic Diagram and Table 2,Signal Names, for a brief overview of the signals connect this device. Address Inputs (A0-A19). The Address Inputs select the cells in the memory array to access dur- ing ...

Page 10

... Read. Read Bus operations are used to output the contents of the Memory Array, the Electronic Signature, the Status Register and the Common Flash Interface. Both Chip Enable and Output En- able must order to perform a read op- IL eration. The Chip Enable input should be used to enable the device ...

Page 11

... Read Query Com- mand. Once the command is issued subsequent Bus Read operations read from the Common Flash Interface Memory Area. See Appendix B, Common Flash Interface, Tables 26, 27, 28, 29, 30 and 31 for details on the information contained in the Common Flash Interface memory area. Block Erase Command The Block Erase command can be used to erase a block ...

Page 12

M28W160CT, M28W160CB memory location must be erased and repro- grammed. See Appendix C, Figure 17, Program Flowchart and Pseudo Code, for the flowchart for using the Program command. Double Word Program Command This feature is offered to improve the programming ...

Page 13

The Protection Register Program cannot be sus- pended. See Appendix C, Figure 23, Protection Register Program Flowchart and Pseudo Code, for the flowchart for using the Protection Register Program command. Block Lock Command The Block Lock command is used to ...

Page 14

M28W160CT, M28W160CB Table 4. Commands No. of Commands Cycles Read Memory Array 1+ Read Status Register 1+ Read Electronic Signature 1+ Read CFI Query 1+ Erase 2 Program 2 (3) 3 Double Word Program Clear Status Register 1 Program/Erase Suspend ...

Page 15

Table 6. Read Block Lock Signature Block Status Locked Block Unlocked Block IL IL Locked-Down Block Note Locked-Down Block can be locked "DQ0 = 1" or ...

Page 16

M28W160CT, M28W160CB BLOCK LOCKING The M28W160C features an instant, individual block locking scheme that allows any block to be locked or unlocked with no latency. This locking scheme has three levels of protection. ■ Lock/Unlock - this first level allows ...

Page 17

Table 9. Block Lock Status Item Block Lock Configuration Block is Unlocked Block is Locked Block is Locked-Down Table 10. Protection Status Current (1) Protection Status (WP, DQ1, DQ0) Program/Erase Current State Allowed 1,0,0 yes (2) no 1,0,1 1,1,0 yes ...

Page 18

M28W160CT, M28W160CB STATUS REGISTER The Status Register provides information on the current or previous Program or Erase operation. The various bits convey information and errors on the operation. To read the Status register the Read Status Register command can be ...

Page 19

Controller Status bit is High (Program/ Erase Controller inactive). Bit 2 is set within 5µs of the Program/Erase Suspend command being is- sued therefore the memory may still complete the operation rather than entering the Suspend mode. When a ...

Page 20

M28W160CT, M28W160CB MAXIMUM RATING Stressing the device above the rating listed in the Absolute Maximum Ratings table may cause per- manent damage to the device. These are stress ratings only and operation of the device at these or any other ...

Page 21

DC AND AC PARAMETERS This section summarizes the operating and mea- surement conditions, and the DC and AC charac- teristics of the device. The parameters in the DC and AC characteristics Tables that follow, are de- rived from tests performed ...

Page 22

M28W160CT, M28W160CB Table 15. DC Characteristics Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO I Supply Current (Read) DD Supply Current (Stand- DD1 Automatic Stand-by) Supply Current I DD2 (Reset) I Supply Current (Program) ...

Page 23

Figure 9. Read Mode AC Waveforms A0-A19 E G DQ0-DQ15 ADDR. VALID CHIP ENABLE Table 16. Read AC Characteristics Symbol Alt t t Address Valid to Next Address Valid AVAV Address Valid to Output Valid AVQV ACC ...

Page 24

M28W160CT, M28W160CB Figure 10. Write AC Waveforms, Write Enable Controlled 24/50 ...

Page 25

Table 17. Write AC Characteristics, Write Enable Controlled Symbol Alt t t Write Cycle Time AVAV Address Valid to Write Enable High AVWH Data Valid to Write Enable High DVWH Chip ...

Page 26

M28W160CT, M28W160CB Figure 11. Write AC Waveforms, Chip Enable Controlled 26/50 ...

Page 27

Table 18. Write AC Characteristics, Chip Enable Controlled Symbol Alt t t Write Cycle Time AVAV Address Valid to Chip Enable High AVEH Data Valid to Chip Enable High DVEH Chip ...

Page 28

M28W160CT, M28W160CB Figure 12. Power-Up and Reset AC Waveforms tVDHPH VDD, VDDQ Table 19. Power-Up and Reset AC Characteristics Symbol Parameter t PHWL Reset High to Write Enable Low, Chip t PHEL Enable Low, Output Enable ...

Page 29

PACKAGE MECHANICAL Figure 13. TSOP48 - 48 lead Plastic Thin Small Outline 20mm, Package Outline DIE Note: Drawing is not to scale. Table 20. TSOP48 - 48 lead Plastic Thin Small Outline, 12 ...

Page 30

M28W160CT, M28W160CB Figure 14. TFBGA46 6.39x6.37mm - 8x6 ball array, 0.75mm pitch, Bottom View Package Outline BALL "A1" A Drawing is not to scale. Table 21. TFBGA46 6.39x6.37mm - 8x6 ball array, 0.75mm pitch, Package Mechanical ...

Page 31

Figure 15. TFBGA46 Daisy Chain - Package Connections (Top view through package Figure 16. TFBGA46 Daisy Chain - PCB Connections proposal (Top view through package ...

Page 32

M28W160CT, M28W160CB PART NUMBERING Table 22. Ordering Information Scheme Example: Device Type M28 Operating Voltage 2.7V to 3.6V 1.65V to 3.6V DD DDQ Device Function 160C = 16 Mbit (1 Mb x16), Boot Block ...

Page 33

Table 23. Daisy Chain Ordering Scheme Example: Device Type M28W160C Daisy Chain -ZB = TFBGA46: 6.39 x 6.37mm, 0.75 mm pitch Option S = Tape & Reel Packing U = ECOPACK Package, Tape & Reel Packing Note:Devices are shipped from ...

Page 34

M28W160CT, M28W160CB APPENDIX A. BLOCK ADDRESS TABLES Table 24. Top Boot Block Addresses, M28W160CT Size # Address Range (KWord FF000-FFFFF 1 4 FE000-FEFFF 2 4 FD000-FDFFF 3 4 FC000-FCFFF 4 4 FB000-FBFFF 5 4 FA000-FAFFF 6 4 F9000-F9FFF ...

Page 35

... APPENDIX B. COMMON FLASH INTERFACE (CFI) The Common Flash Interface is a JEDEC ap- proved, standardized data structure that can be read from the Flash memory device. It allows a system software to query the device to determine various electrical and timing parameters, density information and functions supported by the mem- ory ...

Page 36

M28W160CT, M28W160CB Table 28. CFI Query System Interface Information Offset Data V Logic Supply Minimum Program/Erase or Write voltage DD 1Bh 0027h V Logic Supply Maximum Program/Erase or Write voltage DD 1Ch 0036h V [Programming] Supply Minimum Program/Erase voltage PP ...

Page 37

... Table 29. Device Geometry Definition Offset Word Data Mode 27h 0015h Device Size = 2 28h 0001h Flash Device Interface Code description 29h 0000h 2Ah 0002h Maximum number of bytes in multi-byte program or page = 2 2Bh 0000h Number of Erase Block Regions within the device. 2Ch 0002h It specifies the number of regions within the device containing contiguous Erase Blocks of the same size ...

Page 38

M28W160CT, M28W160CB Table 30. Primary Algorithm-Specific Extended Query Table Offset Data ( 35h (P+0)h = 35h 0050h (P+1)h = 36h 0052h Primary Algorithm extended Query table unique ASCII string “PRI” (P+2)h = 37h 0049h (P+3)h = 38h 0031h ...

Page 39

Table 31. Security Code Area Offset Data 80h 00XX Protection Register Lock 81h XXXX 82h XXXX 64 bits: unique device number 83h XXXX 84h XXXX 85h XXXX 86h XXXX 64 bits: User Programmable OTP 87h XXXX 88h XXXX M28W160CT, M28W160CB ...

Page 40

... Note: 1. Status check of b1 (Protected Block sequence error is found, the Status Register must be cleared before further Program/Erase Controller operations. 40/50 program_command (addressToProgram, dataToProgram) {: writeToFlash (any_address, 0x40) ; /*or writeToFlash (any_address, 0x10 writeToFlash (addressToProgram, dataToProgram) ; /*Memory enters read status state after the Program Command status_register=readFlash (any_address) ; ...

Page 41

... If an error is found, the Status Register must be cleared before further Program/Erase operations. 3. Address 1 and Address 2 must be consecutive addresses differing only for bit A0. double_word_program_command (addressToProgram1, dataToProgram1, { writeToFlash (any_address, 0x30) ; writeToFlash (addressToProgram1, dataToProgram1) ; writeToFlash (addressToProgram2, dataToProgram2) ; /*Memory enters read status state after the Program command status_register=readFlash (any_address must be toggled*/ } while (status_register.b7== 0) ...

Page 42

... must be toggled*/ } while (status_register.b7 writeToFlash (any_address, 0xFF) ; read_data ( ) ; /*read data from another block*/ /*The device returns to Read Array (as if program/erase suspend was not issued).*/ } { writeToFlash (any_address, 0xFF) ; read_data ( ); /*read data from another address*/ writeToFlash (any_address, 0xD0) ; /*write 0xD0 to resume program*/ } AI03540b ...

Page 43

... YES YES End Note error is found, the Status Register must be cleared before further Program/Erase operations. erase_command ( blockToErase ) { writeToFlash (any_address, 0x20) ; writeToFlash (blockToErase, 0xD0 only A12-A20 are significannt */ /* Memory enters read status state after the Erase Command */ do { status_register=readFlash (any_address must be toggled*/ } while (status_register.b7 ...

Page 44

... must be toggled*/ } while (status_register.b7 writeToFlash (any_address, 0xFF) ; read_data ( ) ; /*read data from another block*/ /*The device returns to Read Array (as if program/erase suspend was not issued).*/ } { writeToFlash (any_address, 0xFF) ; read_program_data ( ); /*read or program data from another address*/ writeToFlash (any_address, 0xD0) ; /*write 0xD0 to resume erase*/ } AI03542b ...

Page 45

... NO error_handler () ; /*Check the locking state (see Read Block Signature table )*/ writeToFlash (any_address, 0xFF) ; /*Reset to Read Array mode*/ } M28W160CT, M28W160CB AI04364 45/50 ...

Page 46

... End Note: 1. Status check of b1 (Protected Block sequence error is found, the Status Register must be cleared before further Program/Erase Controller operations. 46/50 protection_register_program_command (addressToProgram, dataToProgram) {: writeToFlash (any_address, 0xC0) ; writeToFlash (addressToProgram, dataToProgram) ; /*Memory enters read status state after the Program Command status_register=readFlash (any_address) ; ...

Page 47

APPENDIX D. COMMAND INTERFACE AND PROGRAM/ERASE CONTROLLER STATE Table 32. Write State Machine Current/Next, sheet Data Current SR Read When State bit 7 Array Read (FFh) Read Array “1” Array Read Array Prog.Setup Read “1” Status Read ...

Page 48

M28W160CT, M28W160CB Table 33. Write State Machine Current/Next, sheet Current State Read Elect.Sg. (90h) Read Array Read Elect.Sg. Read CFI Query Read Status Read Elect.Sg. Read CFI Query Read Elect.Sg. Read Elect.Sg. Read CFI Query Read CFI ...

Page 49

REVISION HISTORY Table 34. Document Revision History Date Version January 2001 -01 3/06/01 -02 24-Apr-2001 -03 29-May-2001 -04 31-May-2001 -05 02-Jul-2001 -06 31-Oct-2001 -07 16-May-2002 -08 19-Feb-2003 8.1 04-Oct-2005 9.0 20-Jan-2006 10.0 10-Dec-2007 11.0 Revision Details First Issue Document type: ...

Page 50

... Contact your local Numonyx sales office or your distributor to obtain the latest specifications and before placing your product order. Copies of documents which have an order number and are referenced in this document, or other Numonyx literature may be obtained by Numonyx StrataFlash is a trademark or registered trademark of Numonyx or its subsidiaries in the United States and other countries. *Other names and brands may be claimed as the property of others. ...

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