NAND512R3A2CZA6E Micron Technology Inc, NAND512R3A2CZA6E Datasheet

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NAND512R3A2CZA6E

Manufacturer Part Number
NAND512R3A2CZA6E
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of NAND512R3A2CZA6E

Cell Type
NAND
Density
512Mb
Access Time (max)
15us
Interface Type
Parallel
Address Bus
26b
Operating Supply Voltage (typ)
1.8V
Operating Temp Range
-40C to 85C
Package Type
VFBGA
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
1.7V
Operating Supply Voltage (max)
1.95V
Word Size
8b
Number Of Words
64M
Supply Current
15mA
Mounting
Surface Mount
Pin Count
63
Lead Free Status / Rohs Status
Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NAND512R3A2CZA6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Features
Table 1.
June 2009
This is information on a product still in production but not recommended for new designs.
– 512-Mbit memory array
– Cost effective solutions for mass storage
– x8 or x16 bus width
– Multiplexed address/ data
– x8 device: (512 + 16 spare) bytes
– x16 device: (256 + 8 spare) words
– x8 device: (16K + 512 spare) bytes
– x16 device: (8K + 256 spare) words
– Random access:
– Sequential access:
– Page program time: 200 µs (typ)
– OTP area
High density NAND flash memories
NAND interface
Supply voltage: 1.8 V, 3 V
Page size
Block size
Page read/program
Copy back program mode
Fast block erase: 2 ms (typ)
Status register
Electronic signature
Chip Enable ‘don’t care’
Security features
applications
12 µs (3 V)/15 µs (1.8 V) (max)
30 ns (3 V)/50 ns (1.8 V) (min)
Device summary
NAND512-A2C
Reference
NAND512R4A2C NAND512W3A2C
1.8 V/3 V, SLC NAND flash memories
512-Mbit, 528-byte/264-word page,
Rev 5
– Serial number (unique ID) option
– Program/erase locked during power
– 100,000 program/erase cycles (with ECC)
– 10 years data retention
– Error correction code models
– Bad blocks management and wear leveling
– Hardware simulation models
Hardware data protection
Data integrity
RoHS compliant packages
Development tools
transitions
algorithms
VFBGA55 8 x 10 x 1.05 mm (ZD)
VFBGA63 9 x 11 x 1.05 mm (ZA)
TSOP48 12 x 20 mm (N)
Root part number
NAND512R3A2C
NAND512W3A2C
NAND512R3A2C
NAND512R4A2C
FBGA
Not For New Design
www.numonyx.com
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NAND512R3A2CZA6E Summary of contents

Page 1

... NAND512-A2C June 2009 This is information on a product still in production but not recommended for new designs. NAND512R4A2C NAND512W3A2C 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories – Serial number (unique ID) option Hardware data protection – Program/erase locked during power transitions Data integrity – ...

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Contents Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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... Read status register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 6.7.1 6.7.2 6.7.3 6.7.4 6.8 Read electronic signature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 7 Software algorithms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 7.1 Bad block management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 7.2 NAND flash memory failure modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 7.3 Garbage collection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 7.4 Wear-leveling algorithm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 7.5 Error correction code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 7.6 Hardware simulation models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 7.6.1 7.6.2 8 Program and erase times and endurance cycles . . . . . . . . . . . . . . . . . 34 9 Maximum ratings ...

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... Table 9. Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Table 10. Copy back program addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Table 11. Status register bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Table 12. Electronic signature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Table 13. NAND flash failure modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Table 14. Program, erase times and program erase endurance cycles . . . . . . . . . . . . . . . . . . . . . . . 34 Table 15. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Table 16. Operating and AC measurement conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 Table 17. Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 Table 18. ...

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NAND512-A2C List of figures Figure 1. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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... This interface reduces the pin count and makes it possible to migrate to other densities without changing the footprint. To extend the lifetime of NAND flash devices it is strongly recommended to implement an error correction code (ECC). The use of ECC correction allows to achieve up to 100,000 program/erase cycles for each block ...

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... V 512+16 16K+512 x8 bytes bytes 32 pages x 2.7 to 3.6 V 4096 blocks 256+8 8K+256 x16 1.7 to 1.95 V words words NAND flash Timings Random Sequential Page access access program Max Min Typ 15 µ µ 200 µs 15 µ I/O8-I/O15, x16 ...

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... Command register 8/55 Function memory array P/E/R controller, high voltage generator Page buffer Y decoder I/O buffers & latches RB I/O0-I/O7, x8/x16 I/O8-I/O15, x16 NAND512-A2C Direction I/O I/O Input Input Input Input Output Input Input Power supply Ground – – NAND flash AI07561c ...

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... NAND512-A2C Figure 3. TSOP48 connections - x8 devices NAND flash (x8 Description I/O7 I/O6 I/O5 I/ I/O3 I/O2 I/O1 I/ AI07585C 9/55 ...

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Description Figure 4. VFBGA55 connections - x8 devices (top view through package 10/ ...

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NAND512-A2C Figure 5. VFBGA63 connections - x8 devices (top view through package ...

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... In the x16 devices the pages are split into a 256-word main area and an 8-word spare area. Refer to Bad blocks The NAND flash 528-byte/ 264-word page devices may contain bad blocks, that is blocks that contain one or more invalid bits whose reliability is not guaranteed. Additional bad blocks may develop during the lifetime of the device. ...

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NAND512-A2C Figure 6. Memory array organization x8 DEVICES Block = 32 pages Page = 528 bytes (512+16) 1st half page 2nd half page (256 bytes) (256 bytes) Block Page 512 Bytes Page buffer, 512 bytes 512 bytes Block Page 8 ...

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Signal descriptions 3 Signal descriptions See Figure 1: Logic connected to this device. 3.1 Inputs/outputs (I/O0-I/O7) Input/outputs are used to input the selected address, output the data during a read operation or input a command or data ...

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NAND512-A2C 3.6 Read Enable (R) The Read Enable, R, controls the sequential data output during read operations. Data is valid t after the falling edge of R. The falling edge of R also increments the internal RLQV column address counter ...

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Signal descriptions 3.11 V ground SS Ground the reference for the power supply. It must be connected to the system SS, ground. 16/55 NAND512-A2C ...

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NAND512-A2C 4 Bus operations There are six standard bus operations that control the memory. Each of these is described in this section, see 4.1 Command input Command Input bus operations are used to give commands to the memory. Command are ...

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Bus operations 4.5 Write protect Write protect bus operations are used to protect the memory against program or erase operations. When the Write Protect signal is Low the device will not accept program or erase operations and so the contents ...

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NAND512-A2C Table 8. Address definition Address A25 A9 - A13 A14 - A25 A8 is set Low or High by the 00h or 01h command, A8 Bus operations Definition Column address Page address Address in ...

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Command set 5 Command set All bus write operations to the device are interpreted by the command interface. The commands are input on I/O0-I/O7 and are latched on the rising edge of Write Enable when the Command Latch Enable signal ...

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... Device operations 6.1 Pointer operations As the NAND flash memories contain two different areas for x16 devices and three different areas for x8 devices (see act as pointers to the different areas of the memory array (they select the most significant column address). The Read A and Read B commands act as pointers to the main memory area. Their use depends on the bus width of the device ...

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Device operations Figure 8. Pointer operations for programming Address 80h I/O 00h Inputs Areas can be programmed depending on how much data is input. Subsequent 00h commands can be omitted. Address 80h I/O 01h Inputs Areas B, ...

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NAND512-A2C 6.2.2 Page read After the random read access the page data is transferred to the page buffer in a time of t (refer to Table 21 WHBH goes High. The data can then be read out sequentially (from selected ...

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Device operations Figure 10. Sequential row read operations (Read busy time) RB 00h/ I/O Address inputs 01h/ 50h Command code Figure 11. Sequential row read block diagrams Read A command, x8 devices Area B Area A (2nd half Page) (1st ...

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NAND512-A2C 6.3 Page program The page program operation is the standard operation to program data to the memory array. The main area of the memory array is programmed by page, however partial page programming is allowed where any number of ...

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Device operations 6.4 Copy back program The copy back program operation is used to copy the data stored in one page and reprogram it in another page. The copy back program operation does not require external memory and so the ...

Page 27

NAND512-A2C 6.5 Block erase Erase operations are done one block at a time. An erase operation sets all of the bits in the addressed block to ‘1’. All previous data in the block is lost. An erase operation consists of ...

Page 28

Device operations 6.7 Read status register The device contains a status register which provides information on the current or previous program or erase operation. The various bits in the status register convey information and errors on the operation. The status ...

Page 29

NAND512-A2C 6.8 Read electronic signature The device contains a manufacturer code and device code. To read these codes two steps are required: 1. first use one bus write cycle to issue the Read Electronic Signature command (90h), followed by an ...

Page 30

... This section gives information on the software algorithms that Numonyx recommends to implement to manage the bad blocks and extend the lifetime of the NAND device. NAND flash memories are programmed and erased by Fowler-Nordheim tunneling using a high voltage. Exposing the device to a high voltage for extended periods can cause the oxide layer to be damaged ...

Page 31

... NAND512-A2C Table 13. NAND flash failure modes Operation Erase Program Read Figure 16. Bad block management flowchart Procedure Block Replacement Block Replacement START Block Address = Block 0 Increment Block Address Update Data NO Bad Block table = FFh? YES Last NO block? YES END Software algorithms ECC ...

Page 32

... Error correction code An error correction code (ECC) can be implemented in the NAND flash memories to identify and correct errors in the data. For every 2048 bits in the device the implementation of 22 bits of ECC (16 bits for line parity plus 6 bits for column parity) is required ...

Page 33

... Behavioral simulation models Denali software corporation models are platform independent functional models designed to assist customers in performing entire system simulations (typical VHDL/Verilog). These models describe the logic behavior and timings of NAND flash devices, and so allow software to be developed before hardware. 7.6.2 IBIS simulations models IBIS (I/O buffer information specification) models describe the behavior of the I/O buffers and electrical characteristics of flash devices ...

Page 34

... V Input or output voltage IO V Supply voltage DD 1. Minimum voltage may undershoot to –2 V for less than 20 ns during transitions on input and I/O pins. Maximum voltage may overshoot to V 34/55 NAND flash Min Typ 200 100,000 10 Table 15: Absolute maximum Parameter Min – 50 – ...

Page 35

... Grade 6 A 1.8 V devices ) (1 TTL GATE devices 1.8 V devices 3 V devices 1.8 V devices 3 V devices ref (1)(2) Parameter Test conditions and C are not 100% tested. IN I/O DC and AC parameters NAND flash Units Min Max 1.7 1.95 V 2.7 3.6 V –40 85 ° 0.4 2 ...

Page 36

... V Output low voltage level OL I (RB) Output low current (RB supply voltage (erase and DD V LKO program lockout) 1. Leakage currents double on stacked devices. Figure 19. Equivalent testing circuit for AC characteristics measurement NAND flash 36/55 (1) Test conditions t minimum Sequential RLRL read E IL, OUT Program – ...

Page 37

NAND512-A2C Table 19. DC characteristics devices Symbol Parameter I DD1 Operating current I DD2 I DD3 I Standby current (TTL), DD4 I Standby current (CMOS) DD5 I Input leakage current LI I Output leakage current LO V Input ...

Page 38

DC and AC parameters Table 21. AC characteristics for operations Alt. Symbol symbol t Address Latch Low to ALLRL1 t AR Read Enable Low t ALLRL2 t t Ready/Busy High to Read Enable Low BHRL RR t BLBH1 t t ...

Page 39

NAND512-A2C Figure 20. Command Latch AC waveforms CL tCLHWH (CL Setup time) tELWH H(E Setup time tALLWH (ALSetup time) AL I/O Figure 21. Address Latch AC waveforms CL tELWH (E Setup time) E tWLWH W tWHWL tALHWH (AL ...

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DC and AC parameters Figure 22. Data Input Latch AC waveforms CL E tALLWH (ALSetup time) AL tWLWH W (Data Setup time) I/O Figure 23. Sequential data output after read AC waveforms Low Low, W ...

Page 41

NAND512-A2C Figure 24. Read status register AC waveforms tCLHWH tELWH Figure 25. Read electronic signature AC waveforms I/O 90h Read Electronic Signature Command 1. Refer to Table 12 for the values of the manufacturer and ...

Page 42

DC and AC parameters Figure 26. Page read A/read B operation AC waveforms CL E tWLWL 00h or Add.N I/O 01h cycle 1 Command Code 42/55 tWHBL tALLRL2 tWHBH tRLRH tBLBH1 Data Add.N Add.N Add.N cycle ...

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NAND512-A2C Figure 27. Read C operation, one page AC waveforms Add. M I/O 50h cycle 1 RB Command Code 1. A0-A7 is the address in the spare memory area, where A0-A3 are valid and A4-A7 ...

Page 44

DC and AC parameters Figure 28. Page program AC waveforms CL E tWLWL (Write Cycle time Add.N I/O 80h cycle 1 RB Page Program Setup Code 44/55 tWLWL tWHBL Add.N Add.N Add.N N cycle 4 cycle 2 ...

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NAND512-A2C Figure 29. Block erase AC waveforms CL E tWLWL (Write Cycle time Add. I/O 60h cycle 1 RB Block Erase Block Address Input Setup Command Figure 30. Reset AC waveforms I/O FFh ...

Page 46

DC and AC parameters Figure 31. Program/erase enable waveforms W tVHWH WP RB I/O Figure 32. Program/erase disable waveforms W tVLWH WP High RB I/O 10.1 Ready/Busy signal electrical characteristics Figure 33, Figure 34 signal. The value required for the ...

Page 47

NAND512-A2C Figure 33. Ready/Busy AC waveform Figure 34. Ready/Busy load circuit 1.8 V device - 0 0.1 V 3.3 V device - 0 ...

Page 48

DC and AC parameters Figure 35. Resistor value versus waveform timings for Ready/Busy signal 25°C. 10.2 Data protection The Numonyx NAND device is designed to guarantee data protection during power transitions detection circuit disables all ...

Page 49

NAND512-A2C 11 Package mechanical To meet environmental requirements, Numonyx offers these devices in RoHS compliant packages, which have a lead-free second-level interconnect. The category of second-level interconnect is marked on the package and on the inner box label, in compliance ...

Page 50

Package mechanical Figure 38. VFBGA55 1. active ball array, 0.8 mm pitch, package outline FE1 FD1 Drawing is not to scale. 50/ ...

Page 51

NAND512-A2C Table 23. VFBGA55 1. active ball array, 0.8 mm pitch, mechanical data Symbol Typ 0.65 b 0.45 D 8.00 D1 4.00 D2 5.60 ddd E 10.00 ...

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Package mechanical Figure 39. VFBGA63 1. +15, 0.8 mm pitch, package outline FD1 BALL "A1" 1. Drawing is not to scale. Table 24. VFBGA63 ...

Page 53

... NAND512-A2C 12 Ordering information Table 25. Ordering information scheme Example: Device type NAND = NAND flash memory Density 512 = 512 Mbits Operating voltage 1 2 Bus width x16 Family identifier A = 528-byte/ 264-word page Device options option (Chip Enable ‘care’; sequential row read enabled Chip Enable don’ ...

Page 54

... VLWH operations, note 2 below the same table, enable waveforms and Modified: Section 3.9: Ready/Busy 2 failure in Table 13: NAND flash failure V in Table 19: DC characteristics devices LKO Read status register AC Minor text changes. 3 Applied Numonyx branding. Added the sequential row read option and the package VFBGA55 4 throughout the document ...

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... Contact your local Numonyx sales office or your distributor to obtain the latest specifications and before placing your product order. Copies of documents which have an order number and are referenced in this document, or other Numonyx literature may be obtained by Numonyx StrataFlash is a trademark or registered trademark of Numonyx or its subsidiaries in the United States and other countries. *Other names and brands may be claimed as the property of others. ...

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