SEMIX 252 GB 126 HD SEMIKRON, SEMIX 252 GB 126 HD Datasheet
SEMIX 252 GB 126 HD
Manufacturer Part Number
SEMIX 252 GB 126 HD
Description
09J5164
Manufacturer
SEMIKRON
Datasheet
1.SEMIX_252_GB_126_HD.pdf
(2 pages)
Specifications of SEMIX 252 GB 126 HD
Transistor Polarity
N Channel
Dc Collector Current
250A
Collector Emitter Voltage Vces
2.15V
Collector Emitter Voltage V(br)ceo
1.2kV
Continuous Collector Current Ic
270A
Rohs Compliant
Yes
Collector Emitter Saturation Voltage Vce(sat)
1.7V
SEMiX 252GB126HD
Trench IGBT Modules
SEMiX 252GB126HD
Target Data
Features
Typical Applications
1
SEMiX
GB
TM
2
Absolute Maximum Ratings
Symbol
IGBT
Inverse diode
Characteristics
Symbol
IGBT
Inverse diode
Thermal characteristics
Temperature sensor
Mechanical data
19-02-2004 SCT
Conditions
Conditions
min.
Values
typ.
© by SEMIKRON
max.
Units
Units
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SEMIX 252 GB 126 HD Summary of contents
Page 1
... Trench IGBT Modules SEMiX 252GB126HD Target Data Features Typical Applications GB 1 Absolute Maximum Ratings Symbol Conditions IGBT Inverse diode Characteristics Symbol Conditions IGBT Inverse diode Thermal characteristics Temperature sensor Mechanical data 19-02-2004 SCT Values Units min. typ. max. Units © by SEMIKRON ...
Page 2
... SEMiX 252GB126HD This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 2 19-02-2004 SCT © by SEMIKRON ...