IRG4PC30FD International Rectifier, IRG4PC30FD Datasheet
IRG4PC30FD
Specifications of IRG4PC30FD
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IRG4PC30FD Summary of contents
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... JC R Junction-to-Case - Diode JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient, typical socket mount JA Wt Weight www.irf.com IRG4PC30FD G TM ultrafast, n-cha nn el 300 (0.063 in. (1.6mm) from case) Typ. ––– ––– 0.24 ––– 6 (0.21) PD 91460B Fast CoPack IGBT ...
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... IRG4PC30FD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown VoltageS 600 (BR)CES Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage ––– GE(th) J Forward Transconductance Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop ...
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... C E Fig Typical Output Characteristics www.irf.com 1 f, Frequency (kHz) (Load Current = I of fundamental) RMS 15V Fig Typical Transfer Characteristics IRG4PC30FD D uty cy cle 5° °C s ink riv ified T urn-on los se s inc lude e ffe cts rse issip ation = 24W 150° 25° ...
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... IRG4PC30FD ase Tem perature (°C) C Fig Maximum Collector Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 2 15V G E 80µs PULSE WIDTH 2.0 1.5 1 -60 -40 Fig Typical Collector-to-Emitter Voltage vs. Junction Temperature ura tio 34A 17A 8. Junction Temperature (°C) ...
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... 15V 25° 17A Gate Resistance ( G Fig Typical Switching Losses vs. Gate Resistance www.irf.com 400V 17A SHORTED Total Gate Charge (nC) Fig Typical Gate Charge vs. Gate-to-Emitter Voltage 15V 480V 0.1 -60 -40 - Junction Temperature (°C) ) Fig Typical Switching Losses vs. Junction Temperature IRG4PC30FD 34A 17A 8. ...
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... IRG4PC30FD 8 150° 480V 15V G E 6.0 4.0 2.0 0 Collector-to-Emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current ° ° ° 0.4 0.8 1.2 1.6 2 lta 125 ° TIN lle cto r-to-E m itte r V olta Fig ...
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... ° ° /µ Fig Typical Reverse Recovery vs ° ° 6 /µ Fig Typical Stored Charge vs. di www.irf.com ° ° 6 Fig Typical Recovery Current vs /dt Fig Typical di f IRG4PC30FD /µ / ° ° 6 /µ /dt vs. di /dt (rec ...
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... IRG4PC30FD Same ty pe device as D .U.T. 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining d( d(off) f Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Fig. 18d - µ S ...
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... µ www.irf.com D.U. 480V IRG4PC30FD 480V @25° ...
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... IRG4PC30FD Q Repetitive rating: V =20V; pulse width limited by maximum junction temperature (figure 20 =80%( =20V, L=10µ CES GE S Pulse width 80µs; duty factor 0.1%. T Pulse width 5.0µs, single shot (. (. (. (. . . CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...