IRG4PC30FD International Rectifier, IRG4PC30FD Datasheet

07B1587

IRG4PC30FD

Manufacturer Part Number
IRG4PC30FD
Description
07B1587
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4PC30FD

Dc Collector Current
31A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
100W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Rohs Compliant
No

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4PC30FD
Manufacturer:
IR
Quantity:
12 500
Features
Features
Features
Features
Features
Benefits
Absolute Maximum Ratings
Thermal Resistance
R
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
• Generation -4 IGBT's offer highest efficiencies
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
• Designed to be a "drop-in" replacement for equivalent
• Fast: Optimized for medium operating
• Generation 4 IGBT design provides tighter
• IGBT co-packaged with HEXFRED
• Industry standard TO-247AC package
www.irf.com
R
R
R
Wt
V
I
I
I
I
I
I
V
P
P
T
T
LM
FM
IGBT's . Minimized recovery characteristics require
C
C
CM
F
kHz in resonant mode).
parameter distribution and higher efficiency than
Generation 3
available
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
industry-standard Generation 3 IR IGBT's
STG
less/no snubbing
CES
GE
D
D
J
frequencies ( 1-5 kHz in hard switching, >20
JC
@ T
@ T
@ T
JC
CS
JA
@ T
@ T
C
C
C
C
C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Parameter
Parameter
TM
ultrafast,
G
n-cha nn el
300 (0.063 in. (1.6mm) from case)
6 (0.21)
Typ.
0.24
–––
–––
–––
IRG4PC30FD
C
E
10 lbf•in (1.1 N•m)
-55 to +150
Max.
TO-247AC
± 20
600
120
120
120
100
31
17
12
42
Fast CoPack IGBT
@V
V
CE(on) typ.
Max.
V
GE
–––
–––
1.2
2.5
40
CES
= 15V, I
= 600V
PD 91460B
C
1.59V
= 17A
Units
g (oz)
°C/W
12/30/00
Units
°C
W
V
A
V
1

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IRG4PC30FD Summary of contents

Page 1

... JC R Junction-to-Case - Diode JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient, typical socket mount JA Wt Weight www.irf.com IRG4PC30FD G TM ultrafast, n-cha nn el 300 (0.063 in. (1.6mm) from case) Typ. ––– ––– 0.24 ––– 6 (0.21) PD 91460B Fast CoPack IGBT ...

Page 2

... IRG4PC30FD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown VoltageS 600 (BR)CES Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage ––– GE(th) J Forward Transconductance Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop ...

Page 3

... C E Fig Typical Output Characteristics www.irf.com 1 f, Frequency (kHz) (Load Current = I of fundamental) RMS 15V Fig Typical Transfer Characteristics IRG4PC30FD D uty cy cle 5° °C s ink riv ified T urn-on los se s inc lude e ffe cts rse issip ation = 24W 150° 25° ...

Page 4

... IRG4PC30FD ase Tem perature (°C) C Fig Maximum Collector Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 2 15V G E 80µs PULSE WIDTH 2.0 1.5 1 -60 -40 Fig Typical Collector-to-Emitter Voltage vs. Junction Temperature ura tio 34A 17A 8. Junction Temperature (°C) ...

Page 5

... 15V 25° 17A Gate Resistance ( G Fig Typical Switching Losses vs. Gate Resistance www.irf.com 400V 17A SHORTED Total Gate Charge (nC) Fig Typical Gate Charge vs. Gate-to-Emitter Voltage 15V 480V 0.1 -60 -40 - Junction Temperature (°C) ) Fig Typical Switching Losses vs. Junction Temperature IRG4PC30FD 34A 17A 8. ...

Page 6

... IRG4PC30FD 8 150° 480V 15V G E 6.0 4.0 2.0 0 Collector-to-Emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current ° ° ° 0.4 0.8 1.2 1.6 2 lta 125 ° TIN lle cto r-to-E m itte r V olta Fig ...

Page 7

... ° ° /µ Fig Typical Reverse Recovery vs ° ° 6 /µ Fig Typical Stored Charge vs. di www.irf.com ° ° 6 Fig Typical Recovery Current vs /dt Fig Typical di f IRG4PC30FD /µ / ° ° 6 /µ /dt vs. di /dt (rec ...

Page 8

... IRG4PC30FD Same ty pe device as D .U.T. 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining d( d(off) f Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Fig. 18d - µ S ...

Page 9

... µ www.irf.com D.U. 480V IRG4PC30FD 480V @25° ...

Page 10

... IRG4PC30FD Q Repetitive rating: V =20V; pulse width limited by maximum junction temperature (figure 20 =80%( =20V, L=10µ CES GE S Pulse width 80µs; duty factor 0.1%. T Pulse width 5.0µs, single shot (. (. (. (. . . CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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