IRF7341QPBF International Rectifier, IRF7341QPBF Datasheet

IRF7341QPBF

Manufacturer Part Number

IRF7341QPBF

Description

19K8260

Manufacturer

International Rectifier

Datasheet

1.IRF7341QPBF.pdf (9 pages)

Specifications of IRF7341QPBF

Transistor Polarity

N Channel

Continuous Drain Current Id

5.1A

Drain Source Voltage Vds

55V

On Resistance Rds(on)

50mohm

Rds(on) Test Voltage Vgs

10V

Threshold Voltage Vgs Typ

Rohs Compliant

Yes

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Description

Absolute Maximum Ratings

Thermal Resistance

Typical Applications

•

Benefits

•

Specifically designed for Automotive applications, these

HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize

the lastest processing techniques to achieve extremely low

on-resistance per silicon area. Additional features of these

Automotive qualified HEXFET Power MOSFET’s are a 175°C

junction operating temperature, fast switching speed and

improved repetitive avalanche rating. These benefits com-

bine to make this design an extremely efficient and reliable

device for use in Automotive applications and a wide variety

of other applications.

The 175°C rating for the SO-8 package provides improved

thermal performance with increased safe operating area and

dual MOSFET die capability make it ideal in a variety of

power applications. This dual, surface mount SO-8 can

dramatically reduce board space and is also available in

Tape & Reel.

www.irf.com

Air bag

Anti-lock Braking Systems (ABS)

Electronic Fuel Injection

Advanced Process Technology

Dual N-Channel MOSFET

Ultra Low On-Resistance

175°C Operating Temperature

Repetitive Avalanche Allowed up to Tjmax

Automotive [Q101] Qualified

θJA

@ T

, T

STG

= 25°C

= 70°C

= 25°C

= 70°C

Drain-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Single Pulse Avalanche Energy‚

Avalanche Current

Repetitive Avalanche Energy

Junction and Storage Temperature Range

Parameter

Maximum Junction-to-Ambient

Gate-to-Source Voltage

Linear Derating Factor

Parameter

@ 10V

Max.

55V

DSS

Top View

See Fig. 14, 15, 16

HEXFET

0.065@V

0.050@V

-55 to + 175

DS(on)

62.5

± 20

Max.

140

Units

5.1

4.2

2.4

1.7

5.1

IRF7341Q

Power MOSFET

max

= 4.5V

= 10V

SO-8

4.42A

5.1A

mW/°C

Units

°C/W

°C

Related parts for IRF7341QPBF

IRF7341QPBF Summary of contents

Page 1

Typical Applications • Anti-lock Braking Systems (ABS) • Electronic Fuel Injection • Air bag Benefits • Advanced Process Technology • Dual N-Channel MOSFET • Ultra Low On-Resistance • 175°C Operating Temperature • Repetitive Avalanche Allowed up to Tjmax • Automotive ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 ° 175 20µs PULSE WIDTH ...

Page 4

0V MHZ C iss = 1200 SHORTED C rss = C gd 1000 C oss = Ciss 800 600 400 Coss 200 ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE ...

Page 6

7.1A 0.030 0.020 2.0 4.0 6.0 8.0 10.0 V GS, Gate -to -Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage Charge Fig 13a. ...

Page 7

Duty Cycle = Single Pulse 10 0.01 1 0.05 0.10 0.1 0.01 0.001 1.0E-06 1.0E-05 1.0E-04 Fig 15. Typical Avalanche Current Vs.Pulsewidth 140 TOP Single Pulse BOTTOM 10% Duty Cycle 120 5.1A 100 ...

Page 8

SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOT DIMENS IONING & ...

Page 9

SO-8 Tape and Reel Dimensions are shown in millimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS ...

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