NTMD5836NL ON Semiconductor, NTMD5836NL Datasheet

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NTMD5836NL

Manufacturer Part Number
NTMD5836NL
Description
55T6925
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTMD5836NL

Module Configuration
Dual N Channel
Transistor Polarity
N Channel
Continuous Drain Current Id
9A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.0095ohm
Rds(on) Test Voltage Vgs
10V
Rohs Compliant
Yes

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NTMD5836NL
Power MOSFET
40 V, Dual N−Channel, SOIC−8
Features
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
2. Only selected channel is been powered
© Semiconductor Components Industries, LLC, 2011
March, 2011 − Rev. 0
Compliant
Asymmetrical N Channels
Low R
Low Capacitance
Optimized Gate Charge
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
sq [2 oz] including traces)
Channel 1
Channel 2
1W applied on channel 1: T
DS(on)
V
(BR)DSS
40 V
40 V
J
= 1 W * 85°C/W + 25°C = 110°C
30.8 mW @ 4.5 V
16 mW @ 4.5 V
12 mW @ 10 V
25 mW @ 10 V
R
DS(on)
Max
(Notes 1 and 2)
I
D
6.5 A
11 A
Max
1
†For information on tape and reel specifications,
NTMD5836NLR2G
G1
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
(Note: Microdot may be in either location)
CASE 751
Device
8
SOIC−8
N−Channel 1
A
Y
WW
G
ORDERING INFORMATION
1
D1
http://onsemi.com
S1
= Assembly Location
= Year
= Work Week
= Pb−Free Package
AND PIN ASSIGNMENT
(Pb−Free)
MARKING DIAGRAM*
Package
SOIC−8
Publication Order Number:
8
1
G2
D1 D1 D2 D2
S1 G1 S2 G2
AYWW G
5836NL
N−Channel 2
G
NTMD5836NL/D
Tape & Reel
D2
Shipping
2500 /
S2

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NTMD5836NL Summary of contents

Page 1

... Tape and Reel Packaging Specifications Brochure, BRD8011/D 1 http://onsemi.com N−Channel 1 N−Channel MARKING DIAGRAM* AND PIN ASSIGNMENT 5836NL AYWW Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION † Package Shipping SOIC−8 2500 / (Pb−Free) Tape & Reel Publication Order Number: NTMD5836NL/D ...

Page 2

MAXIMUM RATINGS (T = 25°C unless otherwise stated) J Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current R (Notes 3 and 4) θJA Power Dissipation R (Notes 3 and 4) θJA Continuous Drain Current R (Notes 3 and 4) θJA ...

Page 3

ELECTRICAL CHARACTERISTICS Parameter Symbol OFF CHARACTERISTICS Drain−to−Source Breakdown V Voltage Drain−to−Source Breakdown V Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Negative Threshold Temperature V Coefficient Drain−to−Source On Resistance Forward ...

Page 4

ELECTRICAL CHARACTERISTICS Parameter Symbol CHARGES, CAPACITANCES & GATE RESISTANCE Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge Plateau Voltage Gate Resistance SWITCHING CHARACTERISTICS (Note 10) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS ...

Page 5

DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics − Channel 1 0.035 0.03 0.025 0.02 0.015 0.01 ...

Page 6

C iss 2000 1500 1000 500 C oss C rss DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation − Channel 1 1000 4.5 ...

Page 7

DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics − Channel 2 0.05 0.04 0.03 0.02 0. ...

Page 8

C 200 oss C rss DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation − Channel 2 1000 ...

Page 9

TYPICAL PERFORMANCE CURVES 100 D = 0.5 0.2 10 0.1 0.05 0.02 1 0.01 0.1 SINGLE PULSE 0.01 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 t, PULSE TIME (s) Figure 13. Thermal Response http://onsemi.com 100 1000 ...

Page 10

... BSC H 0.10 0.25 0.004 0.010 J 0.19 0.25 0.007 0.010 J K 0.40 1.27 0.016 0.050 0.25 0.50 0.010 0.020 S 5.80 6.20 0.228 0.244 mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTMD5836NL/D _ ...

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