UPC8151TB-E3 CALIFORNIA EASTERN LABS, UPC8151TB-E3 Datasheet

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UPC8151TB-E3

Manufacturer Part Number
UPC8151TB-E3
Description
Manufacturer
CALIFORNIA EASTERN LABS
Datasheet
1.UPC8151TB-E3.pdf (10 pages)

Specifications of UPC8151TB-E3

Number Of Channels
1
Supply Current
5.8@3VmA
Frequency (max)
1.9GHz
Operating Supply Voltage (min)
2.4V
Operating Supply Voltage (typ)
3V
Operating Supply Voltage (max)
3.3V
Package Type
Super Mini-Mold
Mounting
Surface Mount
Pin Count
6
Noise Figure (typ)
6@1900MHzdB
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Lead Free Status / Rohs Status
Not Compliant

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Company
Part Number
Manufacturer
Quantity
Price
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Part Number:
UPC8151TB-E3
Manufacturer:
NEC
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ELECTRICAL CHARACTERISTICS
FEATURES
• SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V
• LOW CURRENT CONSUMPTION:
• HIGH EFFICIENCY:
• POWER GAIN:
• OPERATING FREQUENCY:
• EXCELLENT ISOLATION:
• HIGH DENSITY SURFACE MOUNTING:
NEC's UPC8151TB is a silicon RFIC designed as a buffer
amplifier for cellular or cordless telephones. This low current
amplifier operates on 3.0 V and is housed in a 6 pin super
minimold package.
The IC is manufactured using NEC's 20 GHz f
silicon bipolar process. This process uses silicon nitride
passivation film and gold electrodes. These materials protect
the chip surface from external pollution and prevent corrosion/
migration. Thus, this IC has excellent performance, uniformity
and reliability.
DESCRIPTION
SYMBOLS
RL
UPC8151TB; Icc = 4.2 mA TYP @ 3.0 V
UPC8151TB; P
UPC8151TB; G
100 MHz to 1900 MHz (Output port LC matching)
UPC8151TB; ISOL = 38 dB TYP @ f = 1 GHz
6 pin super minimold or SOT-363 package
ISOL
P
RL
IM
NF
Icc
G
1dB
OUT
P
IN
3
Circuit Current, No signal
Power Gain
Output Power at 1 dB Compression Point
Noise Figure
Input Return Loss(without matching circuit)
Output Return Loss (with external matching circuit)
3rd Order Intermodulation Distortion
f
f
Isolation
1
1
= 1.000 GHz, f
= 1.900 GHz, f
CELLULAR/CORDLESS TELEPHONES
1dB
P
PARAMETERS AND CONDITIONS
= 12.5 dB TYP @ f = 1 GHz
= +2.5 dBm TYP @ f = 1 GHz
PACKAGE OUTLINE
2
2
PART NUMBER
LOW CURRENT AMPLIFIER FOR
= 1.001 GHz, P
= 1.901 GHz, P
f = 1.00 GHz
f = 1.90 GHz
f = 1.00 GHz
f = 1.90 GHz
f = 1.00 GHz
f = 1.90 GHz
f = 1.00 GHz
f = 1.90 GHz
f = 1.00 GHz
f = 1.90 GHz
f = 1.00 GHz
f = 1.90 GHz
O(each)
O(each)
T
NESAT™ III
(T
= -20 dBm
= -20 dBm
A
= 25 °C, V
CC
= V
OUT
SILICON RFIC
= 3.0 V, Z
UNITS
dBm
dBc
mA
dB
dB
dB
dB
dB
L
= Z
California Eastern Laboratories
+20
+10
-10
+20
+10
-10
0
0
Tuned at 1 GHz
0.3
Tuned at 1.9 GHz
0.3
S
= 50 Ω, at LC matched frequency)
INSERTION POWER GAIN vs.
FREQUENCY AND VOLTAGE
12.0
33.0
29.0
MIN
-1.0
-3.0
2.8
9.5
2.0
1.0
–
–
Frequency, f (GHz)
Frequency, f (GHz)
V
CC
V
CC
= 3.3 V
= 3.0 V
1.0
UPC8151TB
1.0
UPC8151TB
V
CC
V
-62.0
SO6
TYP
12.5
15.0
38.0
34.0
+2.5
+0.5
10.0
12.0
CC
= 3.0 V V
4.2
6.0
6.0
5.0
4.0
54.0
= 3.3 V
CC
= 2.4 V
3.0
3.0
MAX
14.5
17.0
5.8
7.5
7.5
–
–
–
–
–
–

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UPC8151TB-E3 Summary of contents

Page 1

... TYP @ GHz P • OPERATING FREQUENCY: 100 MHz to 1900 MHz (Output port LC matching) • EXCELLENT ISOLATION: UPC8151TB; ISOL = 38 dB TYP @ GHz • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT-363 package DESCRIPTION NEC's UPC8151TB is a silicon RFIC designed as a buffer amplifier for cellular or cordless telephones. This low current amplifier operates on 3 ...

Page 2

ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Supply Voltage CC P Total Power Dissipation Operating Temperature A T Storage Temperature STG Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. ...

Page 3

... TYPICAL APPLICATION EXAMPLE Location Examples in Digital Cellular PRODUCT LINE- +25 ° PARAMETER PART NO. Icc (mA) UPC8128TB 2.8 UPC8151TB 4.5 UPC8152TB 5.6 TYPICAL PERFORMANCE CURVES CIRCUIT CURRENT vs. VOLTAGE 6 No Signals Supply Voltage VCO N PLL = 3 Ω OUTPUT PORT MATCHING FREQUENCY 1 GHz 1.9 GHz G ISOL P G ISOL ...

Page 4

TYPICAL PERFORMANCE CURVES 1.0 GHz OUTPUT PORT MATCHING INSERTION POWER GAIN vs. FREQUENCY AND VOLTAGE +20 +10 0 -10 -20 -30 -40 -50 0.1 0.3 Frequency, f (GHz) ISOLATION vs. FREQUENCY AND VOLTAGE -30 -40 - 3.0 V ...

Page 5

TYPICAL PERFORMANCE CURVES 1.0 GHz OUTPUT PORT MATCHING OUTPUT RETURN LOSS vs. FREQUENCY AND VOLTAGE +10 0 -10 -20 -30 0.1 1.0 0.3 Frequency, f (GHz) OUTPUT POWER vs. INPUT POWER AND VOLTAGE + ...

Page 6

TYPICAL PERFORMANCE CURVES 1.0 GHz Output Port Matching NOISE FIGURE vs. VOLTAGE 7.5 7.0 6.5 6.0 5.5 5.0 4.5 2.0 2.5 3.0 Voltage, V (V) CC 1.9 GHz Output Port Matching INSERTION POWER GAIN vs. FREQUENCY AND VOLTAGE +20 V ...

Page 7

TYPICAL PERFORMANCE CURVES 1.9 GHz Output Port Matching OUTPUT POWER vs. INPUT POWER AND VOLTAGE + 3 -10 -15 -20 -25 -30 -40 -35 -30 -25 -20 -15 Input Power 3RD ...

Page 8

TYPICAL SCATTERING PARAMETERS 3 —Frequency 3 4 OUT CC FREQUENCY S 11 MHz MAG ANG 100 .843 -16.0 200 .752 -27.1 300 .666 -32.4 400 .603 ...

Page 9

... PACKAGE OUTLINE SO6 2.1±0.1 1.25±0.1 2.0±0.2 0.65 1.3 0.65 0.9 ± 0.1 0.7 0 ~0.1 ORDERING INFORMATION PART NUMBER QUANTITY UPC8151TB-E3-A 3K/Reel Note: Embossed tape wide. Pins 1, 2 and 3 face perforated side of tape. TEST CIRCUIT V CC Output Port Match 6 50Ω ...

Page 10

Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...

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