M58BW016DB80T3F Micron Technology Inc, M58BW016DB80T3F Datasheet - Page 55

• Manufacturer Part Number: M58BW016DB80T3F
• Manufacturer: Micron Technology Inc

Specifications of M58BW016DB80T3F

• Lead Free Status / Rohs Status: Not Compliant

M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
9
Note:
Ordering information
Table 25.
1. Qualified & characterized according to AEC Q100 & Q003 or equivalent, advanced screening according to
Devices are shipped from the factory with the memory content bits erased to ’1’.
For a list of available options (speed, package, etc.) or for further information on any aspect
of this device, please contact the Numonyx Sales Office nearest to you.
Example:
Device type
M58
Architecture
B = Burst mode
Operating voltage
W = V
Device function
016D = 16-Mbit (x 32), boot block, burst, 0.15 µm
016F = 16-Mbit (x 32), boot block, burst, 0.11 µm
Array matrix
T = Top boot
B = Bottom boot
Speed
7 = 70 ns
8 = 80 ns (only available in the M58BW016D devices)
Package
T = PQFP80
ZA = LBGA 10 × 12 mm
Temperature range
3 = automotive grade certified
Version
F = silicon version F (only available in the M58BW016D devices)
Option
T = Tape and reel packing
F = ECOPACK package, tape and reel packing
AEC Q001 & Q002 or equivalent.
DD
= 2.7 V to 3.6 V; V
Ordering information scheme
DDQ
(1)
, –40 to 125 °C
= V
DDQIN
= 2.4 to V
M58 BW016D
DD
T
Ordering information
8
T
3
F T
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