M58BW016DB80T3F Micron Technology Inc, M58BW016DB80T3F Datasheet - Page 17
Manufacturer Part Number
Micron Technology Inc
Specifications of M58BW016DB80T3F
Lead Free Status / Rohs Status
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Output supply voltage (V
The output supply voltage, V
program and erase) used for DQ0-DQ31 when used as outputs.
Input supply voltage (V
The input supply voltage, V
L, W, GD, G, E, A0-A18 and DQ0-DQ31, when used as inputs.
Program/erase supply voltage (V
The program/erase supply voltage, V
memory normally executes program and erase operations at V
manufacturing environment, programming may be speeded up by applying a higher voltage
The voltage level V
cycles. Stressing the device beyond these limits could damage the device.
The ground V
reference for the output and input supplies V
A 0.1 µF capacitor should be connected between the supply voltages, V
and the grounds, V
PCB track widths must be sufficient to carry the currents required during all operations of
the parts, see
Don’t use (DU)
This pin should not be used as it is internally connected. Its voltage level can be between
Not connected (NC)
This pin is not physically connected to the device.
, to the V
Table 15: DC
or leave it unconnected.
is the reference for the internal supply voltage V
may be applied for a total of 80 hours over a maximum of 1000
characteristics, for maximum current supply requirements.
, is the power supply for all input signal. Input signals are: K, B,
to decouple the current surges from the power supply. The
, is the output buffer power supply for all operations (read,
, is used for program and erase operations. The
. It is essential to connect V
. The ground V
voltage levels. In a