M58BW016DB80T3F Micron Technology Inc, M58BW016DB80T3F Datasheet - Page 48

• Manufacturer Part Number: M58BW016DB80T3F
• Manufacturer: Micron Technology Inc

Specifications of M58BW016DB80T3F

• Lead Free Status / Rohs Status: Not Compliant

DC and AC parameters
48/70
Table 20.
1. For other timings see
2. Data output should be read on the valid clock edge.
Figure 14. Synchronous burst read (data valid from ‘n’ clock rising edge)
1. For set up signals and timings see synchronous burst read.
Symbol
t
QVKH
t
t
t
t
t
t
t
t
t
t
t
t
KHQX
KHQV
BHKH
GLQV
KHAX
BLKH
KHLX
RLKH
AVLL
KHLL
LLKH
ELLL
K
DQ0-DQ31
Note: n depends on Burst X-Latency
tKHQV
(2)
Address Valid to Latch Enable Low
Burst Address Advance High to Valid
Clock Edge
Burst Address Advance Low to Valid
Clock Edge
Chip Enable Low to Latch Enable Low
Output Enable Low to Output Valid
Valid Clock Edge to Address
Transition
Valid Clock Edge to Latch Enable Low
Valid Clock Edge to Latch Enable
Transition
Valid Clock Edge to Output Transition
Latch Enable Low to Valid Clock Edge E = V
Output Valid to Valid Clock Edge
Valid Data Ready Low to Valid Clock
Edge
Valid Clock Edge to Output Valid
Synchronous burst read AC characteristics
SETUP
Table 16: Asynchronous bus read AC
Parameter
Q0
n
tQVKH
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
tKHQX
Q1
n+1
Burst Read
Q0 to Q3
Q2
n+2
G = V
E = V
L = V
E = V
E = V
E = V
E = V
E = V
Q3
n+3
E = V
IL
IH
IL
IL
IL
IL
IL
IL
IL
,
,
characteristics.
Test condition
, G = V
, G = V
, G = V
, G = V
, G = V
M58BW016DT/B Min
M58BW016DT/B Min
M58BW016FT/B Min
M58BW016FT/B Min
E = V
E = V
E = V
E = V
IL
Q4
, L = V
n+4
IL
IL
IL
IL
IL
IL
IL
IL
IL
(1)
, L = V
, L = V
, L = V
, L = V
, L = V
IH
Q5
n+5
IH
IH
IH
IH
IH
Max
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
M58BW016
70
25
11
0
8
8
0
5
0
0
3
2
6
5
6
6
80
25
11
0
8
8
0
5
0
0
3
2
6
5
6
6
AI04408b
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns