M58BW016DB80T3F

Manufacturer Part NumberM58BW016DB80T3F
ManufacturerMicron Technology Inc
M58BW016DB80T3F datasheet
 


Specifications of M58BW016DB80T3F

Lead Free Status / Rohs StatusNot Compliant  
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Page 48/70

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DC and AC parameters
Table 20.
Synchronous burst read AC characteristics
Symbol
t
Address Valid to Latch Enable Low
AVLL
Burst Address Advance High to Valid
t
BHKH
Clock Edge
Burst Address Advance Low to Valid
t
BLKH
Clock Edge
t
Chip Enable Low to Latch Enable Low
ELLL
t
Output Enable Low to Output Valid
GLQV
Valid Clock Edge to Address
t
KHAX
Transition
t
Valid Clock Edge to Latch Enable Low
KHLL
Valid Clock Edge to Latch Enable
t
KHLX
Transition
t
Valid Clock Edge to Output Transition
KHQX
t
Latch Enable Low to Valid Clock Edge E = V
LLKH
(2)
t
Output Valid to Valid Clock Edge
QVKH
Valid Data Ready Low to Valid Clock
t
RLKH
Edge
t
Valid Clock Edge to Output Valid
KHQV
1. For other timings see
2. Data output should be read on the valid clock edge.
Figure 14. Synchronous burst read (data valid from ‘n’ clock rising edge)
K
tKHQV
DQ0-DQ31
SETUP
Note: n depends on Burst X-Latency
1. For set up signals and timings see synchronous burst read.
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M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Parameter
E = V
E = V
E = V
E = V
IL
G = V
IL
L = V
IH
IL
E = V
E = V
E = V
Table 16: Asynchronous bus read AC
n
n+1
n+2
n+3
tQVKH
Q0
Q1
Q2
Q3
tKHQX
Burst Read
Q0 to Q3
(1)
M58BW016
Test condition
70
E = V
Min
0
IL
, G = V
, L = V
Min
8
IL
IL
IH
, G = V
, L = V
Min
8
IL
IL
IH
Min
0
, L = V
Min
25
IL
IH
E = V
Min
5
IL
E = V
Min
0
IL
E = V
Min
0
IL
,
M58BW016DT/B Min
3
,
M58BW016FT/B Min
2
M58BW016DT/B Min
6
M58BW016FT/B Min
5
, G = V
, L = V
Min
6
IL
IL
IH
, G = V
, L = V
Min
6
IL
IL
IH
, G = V
, L = V
Max
11
IL
IL
IH
characteristics.
n+4
n+5
Q4
Q5
Unit
80
0
ns
8
ns
8
ns
0
ns
25
ns
5
ns
0
ns
0
ns
3
ns
2
ns
6
ns
5
ns
6
ns
6
ns
11
ns
AI04408b