IDT6116SA45SOG

Manufacturer Part NumberIDT6116SA45SOG
ManufacturerIDT, Integrated Device Technology Inc
IDT6116SA45SOG datasheet
 


Specifications of IDT6116SA45SOG

Density16KbAccess Time (max)45ns
Sync/asyncAsynchronousArchitectureNot Required
Clock Freq (max)Not RequiredMHzOperating Supply Voltage (typ)5V
Address Bus11bPackage TypeSOIC
Operating Temp Range0C to 70CNumber Of Ports1
Supply Current100mAOperating Supply Voltage (min)4.5V
Operating Supply Voltage (max)5.5VOperating Temperature ClassificationCommercial
MountingSurface MountPin Count24
Word Size8bNumber Of Words2K
Lead Free Status / Rohs StatusCompliant  
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Features
◆ ◆ ◆ ◆ ◆
High-speed access and chip select times
– Military: 20/25/35/45/55/70/90/120/150ns (max.)
– Industrial: 20/25/35/45ns (max.)
– Commercial: 15/20/25/35/45ns (max.)
◆ ◆ ◆ ◆ ◆
Low-power consumption
◆ ◆ ◆ ◆ ◆
Battery backup operation
– 2V data retention voltage (LA version only)
◆ ◆ ◆ ◆ ◆
Produced with advanced CMOS high-performance
technology
◆ ◆ ◆ ◆ ◆
CMOS process virtually eliminates alpha particle soft-error
rates
◆ ◆ ◆ ◆ ◆
Input and output directly TTL-compatible
◆ ◆ ◆ ◆ ◆
Static operation: no clocks or refresh required
◆ ◆ ◆ ◆ ◆
Available in ceramic and plastic 24-pin DIP, 24-pin Thin Dip,
24-pin SOIC and 24-pin SOJ
◆ ◆ ◆ ◆ ◆
Military product compliant to MIL-STD-833, Class B
Functional Block Diagram
A
0
DECODER
A
10
I/O
0
I/O
7
CS
OE
CONTROL
CIRCUIT
WE
©2006 Integrated Device Technology, Inc.
CMOS Static RAM
16K (2K x 8-Bit)
Description
The IDT6116SA/LA is a 16,384-bit high-speed static RAM
organized as 2K x 8. It is fabricated using IDT's high-performance,
high-reliability CMOS technology.
Access times as fast as 15ns are available. The circuit also offers a
reduced power standby mode. When CS goes HIGH, the circuit will
automatically go to, and remain in, a standby power mode, as long
as CS remains HIGH. This capability provides significant system level
power and cooling savings. The low-power (LA) version also offers a
battery backup data retention capability where the circuit typically
consumes only 1µW to 4µW operating off a 2V battery.
All inputs and outputs of the IDT6116SA/LA are TTL-compatible. Fully
static asynchronous circuitry is used, requiring no clocks or refreshing
for operation.
The IDT6116SA/LA is packaged in 24-pin 600 and 300 mil plastic or
ceramic DIP, 24-lead gull-wing SOIC, and 24-lead J-bend SOJ providing
high board-level packing densities.
Military grade product is manufactured in compliance to the latest
version of MIL-STD-883, Class B, making it ideally suited to military
temperature applications demanding the highest level of performance and
reliability.
ADDRESS
INPUT
DATA
CIRCUIT
1
IDT6116SA
IDT6116LA
128 X 128
MEMORY
ARRAY
I/O CONTROL
JANUARY 2009
V
CC
GND
,
3089 drw 01
DSC-3089/06

IDT6116SA45SOG Summary of contents

  • Page 1

    Features ◆ ◆ ◆ ◆ ◆ High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.) ◆ ◆ ◆ ◆ ◆ Low-power consumption ◆ ◆ ◆ ◆ ◆ Battery backup operation – ...

  • Page 2

    IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Pin Configurations P24 P24 D24 D24 SO24 SO24-4 ...

  • Page 3

    IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Recommended Operating Temperature and Supply Voltage Ambient Grade Temperature O O Military - +125 Industrial - +85 C Commercial +70 O ...

  • Page 4

    IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) DC Electrical Characteristics (V = 5.0V ± 10 0.2V Symbol Parameter Power I Operating Power Supply CC1 SA Current, CS < Outputs Open LA ...

  • Page 5

    IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Low V Data Retention Waveform 4.5V t CDR Test Conditions Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels AC Test ...

  • Page 6

    IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) AC Electrical Characteristics Symbol Parameter Read Cycle t Read Cycle Time RC t Address Access Time AA t Chip Select Access Time ACS (3) Chip Select to Output in Low-Z t CLZ ...

  • Page 7

    IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Timing Waveform of Read Cycle No. 1 ADDRESS OE CS DATA OUT Supply Currents I SB Timing Waveform of Read Cycle No. 2 ADDRESS DATA PREVIOUS DATA VALID ...

  • Page 8

    IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) AC Electrical Characteristics Symbol Parameter Write Cycle t Write Cycle Time WC t Chip Select to End-of-Write CW t Address Valid to End-of-Write AW t Address Set-up Time AS t Write Pulse ...

  • Page 9

    IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Timing Waveform of Write Cycle No. 1 (WE Controlled Timing) ADDRESS DATA PREVIOUS DATA VALID OUT DATA IN Timing Waveform of Write Cycle No. 2 (CS Controlled Timing) ...

  • Page 10

    IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Ordering Information — Military 6116 XX XXX Device Type Power Speed Ordering Information — Commercial & Industrial 6116 XX XXX Device Type Power Speed Military, Commercial, and Industrial Temperature Ranges X X ...

  • Page 11

    IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Datasheet Document History 1/7/ Pg. 11 08/09/00 02/01/01 12/30/03 Pg. 3,10 03/31/05 Pg. 10 11/15/06 Pg. 3 Pg.4 CORPORATE HEADQUARTERS 6024 Silver Creek Valley ...