K6T0808C1D-DL70 Samsung Semiconductor, K6T0808C1D-DL70 Datasheet - Page 4

K6T0808C1D-DL70

Manufacturer Part Number
K6T0808C1D-DL70
Description
Manufacturer
Samsung Semiconductor
Datasheet

Specifications of K6T0808C1D-DL70

Density
256Kb
Access Time (max)
70ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
5V
Address Bus
15b
Package Type
PDIP
Operating Temp Range
0C to 70C
Number Of Ports
1
Supply Current
60mA
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Commercial
Mounting
Through Hole
Pin Count
28
Word Size
8b
Number Of Words
32K
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
K6T0808C1D-DL70
Manufacturer:
SAMSUNG
Quantity:
5 704
Part Number:
K6T0808C1D-DL70
Manufacturer:
SAMSUN
Quantity:
3 492
DC AND OPERATING CHARACTERISTICS
CAPACITANCE
1. Capacitance is sampled not, 100% tested
RECOMMENDED DC OPERATING CONDITIONS
Note:
1. Commercial Product: T
2. Overshoot: V
3. Undershoot: -3.0V in case of pulse width 30ns
4. Overshoot and undershoot are sampled, not 100% tested
K6T0808C1D Family
Input leakage current
Output leakage current
Operating power supply current
Average operating current
Output low voltage
Output high voltage
Standby Current(TTL)
Standby Current (CMOS)
Input capacitance
Input/Output capacitance
Supply voltage
Ground
Input high voltage
Input low voltage
Industrial Product: T
CC
Item
+3.0V in case of pulse width 30ns
Item
Item
A
=-40 to 85 C, otherwise specified
A
1)
=0 to 70 C, otherwise specified
(f=1MHz, T
Symbol
V
I
I
V
I
I
I
CC1
CC2
I
SB1
I
CC
LO
SB
A
LI
OL
OH
=25 C)
Symbol
V
CS=V
Cycle time=1 s, 100% duty, I
CS 0.2V, V
Cycle time=Min,100% duty, I
I
I
CS=V
CS Vcc-0.2V, Other inputs=0~Vcc
I
OL
OH
C
C
IO
IN
Symbol
IO
IN
=2.1mA
=Vss to Vcc
=0mA, CS=V
=-1.0mA
Vcc
Vss
V
V
IH
IH
IH
IL
, Other inputs=V
or OE=V
IN
0.2V, V
IL,
IH
Test Condition
V
or WE=V
IN
Test Conditions
=V
IN
V
V
-0.5
Min
4.5
2.2
IN
IO
IH
0
IH
Vcc -0.2V
=0V
=0V
or V
3)
1)
or V
IL
IO
IO
, V
IL
IL
=0mA, CS=V
=0mA
IO
, Read
=V
SS
to Vcc
Typ
5.0
0
-
-
Low Power
Low Low Power
IL,
V
Min
IN
-
-
=V
IH
Read
Write
or V
Vcc+0.5V
IL
Max
5.5
0.8
0
CMOS SRAM
Min
Max
2.4
-1
-1
10
-
-
-
-
-
-
-
8
2)
Typ
0.2
45
5
2
1
-
-
-
-
-
-
November 1997
Revision 1.01
Max
0.4
10
20
60
30
Unit
1
1
5
1
5
-
Unit
V
V
V
V
pF
pF
Unit
mA
mA
mA
mA
V
V
A
A
A
A

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