K6T0808C1D-DB70 Samsung Semiconductor, K6T0808C1D-DB70 Datasheet

K6T0808C1D-DB70

Manufacturer Part Number
K6T0808C1D-DB70
Description
Manufacturer
Samsung Semiconductor
Datasheet

Specifications of K6T0808C1D-DB70

Density
256Kb
Access Time (max)
70ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
5V
Address Bus
15b
Package Type
PDIP
Operating Temp Range
0C to 70C
Number Of Ports
1
Supply Current
60mA
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Commercial
Mounting
Through Hole
Pin Count
28
Word Size
8b
Number Of Words
32K
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
K6T0808C1D-DB70
Manufacturer:
SAMSUNG
Quantity:
5 704
Part Number:
K6T0808C1D-DB70
Manufacturer:
SAMSUN
Quantity:
4 782
Document Title
Revision History
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
K6T0808C1D Family
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and
Revision No
32Kx8 bit Low Power CMOS Static RAM
0.0
0.1
1.0
History
Initial draft
First revision
Finalize
- Remove 45ns part from commercial product and 100ns part
-
- C
- KM62256D-4/5/7 Family
- KM62256DL/DLI I
- Remove I
- Improved operating current
- Improved standby current
- Improved data retention current
I
KM62256DL-L I
KM62256DLI-L I
KM62256DL-L/DLI-L I
KM62256DL/DLI I
KM62256DL/DLI I
from industrial product.
Replace test load 100pF to 50pF for 55ns part
KM62256DL-L I
KM62256DLI-L I
tOH = 5
KM62256DL-L/DLI-L I
CC2
K
M62256DL/DLI I
IN
= 70
= 6
CC
8pF, C
10ns
60mA
write value
SB1
SB1
SB1
SB1
SB1
DR
IO
SB1
DR
= 10
= 20
= 15
= 8
= 50
= 30
= 50 30 A
= 50
DR
= 100
DR
= 15
= 30
10pF
5 A
10 A
5 A
15 A
5 A
30 A
50 A
3 A
15 A
Draft Data
May 18, 1997
April 1, 1997
November 11, 1997
CMOS SRAM
November 1997
Remark
Design target
Preliminily
Final
Revision 1.01

Related parts for K6T0808C1D-DB70

K6T0808C1D-DB70 Summary of contents

Page 1

... K6T0808C1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM Revision History Revision No History 0.0 Initial draft 0.1 First revision - M62256DL/DLI I = 100 K SB1 KM62256DL SB1 KM62256DLI SB1 - 8pF KM62256D-4/5/7 Family tOH = 5 10ns - KM62256DL/DLI KM62256DL-L/DLI 1.0 Finalize - Remove I write value CC - Improved operating current ...

Page 2

... SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. GENERAL DESCRIPTION The K6T0808C1D families are fabricated by SAMSUNG s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The fami- lies also support low data retention voltage for battery back- up operation with low data retention current ...

Page 3

... PRODUCT LIST Commercial Temperature Products(0~70 C) Part Name Function K6T0808C1D-DL55 28-DIP, 55ns, L-pwr K6T0808C1D-DB55 28-DIP, 55ns, LL-pwr K6T0808C1D-DL70 28-DIP, 70ns, L-pwr K6T0808C1D-DB70 28-DIP, 70ns, LL-pwr K6T0808C1D-GL55 28-SOP, 55ns, L-pwr K6T0808C1D-GB55 28-SOP, 55ns, LL-pwr K6T0808C1D-GL70 28-SOP, 70ns, L-pwr K6T0808C1D-GB70 28-SOP, 70ns, LL-pwr K6T0808C1D-TL55 ...

Page 4

... K6T0808C1D Family RECOMMENDED DC OPERATING CONDITIONS Item Supply voltage Ground Input high voltage Input low voltage Note: 1. Commercial Product otherwise specified A Industrial Product otherwise specified A 2. Overshoot: V +3.0V in case of pulse width 30ns CC 3. Undershoot: -3.0V in case of pulse width 30ns 4. Overshoot and undershoot are sampled, not 100% tested ...

Page 5

... K6T0808C1D Family AC OPERATING CONDITIONS TEST CONDITIONS (Test Load and Test Input/Output Reference) Input pulse level: 0.8 to 2.4V Input rising and falling time: 5ns Input and output reference voltage: 1.5V Output load (See right): C =100pF+1TTL L C =50pF+1TTL L AC CHARACTERISTICS (Vcc=4.5~5.5V, Commercial product: T ...

Page 6

... K6T0808C1D Family TIMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE(1) Address Data Out Previous Data Valid TIMING WAVEFORM OF READ CYCLE(2) Address CS OE High-Z Data out NOTES (READ CYCLE and are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage ...

Page 7

... K6T0808C1D Family TIMING WAVEFORM OF WRITE CYCLE(1) Address CS WE Data in Data Undefined Data out TIMING WAVEFORM OF WRITE CYCLE(2) Address CS WE Data in Data out NOTES (WRITE CYCLE write occurs during the overlap of a low CS and a low WE. A write begins at the latest transition among CS going Low and WE going low : A write end at the earliest transition among CS going high and WE going high the end of write ...

Page 8

... K6T0808C1D Family PACKAGE DIMENSIONS 28 PIN DUAL INLINE PACKAGE(600mil) #28 13.60 0.20 0.535 0.008 #1 1. 0.065 28 PIN PLASTIC SMALL OUTLINE PACKAGE(450mil) #28 #1 18.69 0.736 18.29 0.720 0.89 0.41 0. 0.035 0.016 0.004 #15 #14 36.72 MAX 1.446 36.32 0.20 1.430 0.008 0.46 0.10 0.018 0.004 2 ...

Page 9

... K6T0808C1D Family PACKAGE DIMENSIONS 28 PIN THIN SMALL OUTLINE PACKAGE TYPE1 (0813.4F) +0.10 0.20 -0.05 +0.004 0.008 -0.002 #1 0.55 #14 0.0217 0.25 TYP 0.010 0~8 0.45 ~0.75 0.018 ~0.030 28 PIN THIN SMALL OUTLINE PACKAGE TYPE1 (0813.4R) +0.10 0.20 -0.05 +0.004 0.008 -0.002 #14 0.55 ...

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